JPS5750423A - Vapor phase growth device - Google Patents

Vapor phase growth device

Info

Publication number
JPS5750423A
JPS5750423A JP12669680A JP12669680A JPS5750423A JP S5750423 A JPS5750423 A JP S5750423A JP 12669680 A JP12669680 A JP 12669680A JP 12669680 A JP12669680 A JP 12669680A JP S5750423 A JPS5750423 A JP S5750423A
Authority
JP
Japan
Prior art keywords
bell jar
temperature
vapor phase
phase growth
bell
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP12669680A
Other languages
Japanese (ja)
Other versions
JPS627685B2 (en
Inventor
Teruo Kozai
Shigeki Hayase
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP12669680A priority Critical patent/JPS5750423A/en
Publication of JPS5750423A publication Critical patent/JPS5750423A/en
Publication of JPS627685B2 publication Critical patent/JPS627685B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
    • C23C16/481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation by radiant heating of the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

PURPOSE:To conduct vapor phase growth having the small dispersion of thickness and resistivity efficiently by mounting a means which rapidly elevates the temperature of a semiconductor wafer placed in an internal bell jar uniformly to the predetermined vapor phase growth temperature and controls it automatically. CONSTITUTION:The threefold quartz bell jars are mounted, an inner surface of the external bell jar is coated with a metallic film having high reflection efficiency, and the means is mounted which heats the semiconductor wafer in the internal bell jar directly and indirectly by means of a heating heater disposed between the external bell jar and the central bell jar. For example, the wafer 30 is placed on a heating rotary plate 21 in the bell jar 1 fixed to a base plate 6 in a completely airtight manner, heated directly by the heating heater 4 fitted between the center and external bell jars and indirectly by the reflected heat waves of the bell jar 3, and automatically controlled at the temperature set previously by temperature information measured by a temperature measuring terminal 24.
JP12669680A 1980-09-12 1980-09-12 Vapor phase growth device Granted JPS5750423A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12669680A JPS5750423A (en) 1980-09-12 1980-09-12 Vapor phase growth device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12669680A JPS5750423A (en) 1980-09-12 1980-09-12 Vapor phase growth device

Publications (2)

Publication Number Publication Date
JPS5750423A true JPS5750423A (en) 1982-03-24
JPS627685B2 JPS627685B2 (en) 1987-02-18

Family

ID=14941577

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12669680A Granted JPS5750423A (en) 1980-09-12 1980-09-12 Vapor phase growth device

Country Status (1)

Country Link
JP (1) JPS5750423A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59200424A (en) * 1983-04-28 1984-11-13 Hitachi Electronics Eng Co Ltd Chemical vapor deposition device
JPS6024377A (en) * 1983-07-21 1985-02-07 Canon Inc Method and device for producing deposited film
JPS61246370A (en) * 1985-04-23 1986-11-01 Sakaguchi Dennetsu Kk Gaseous phase chemical reaction furnace
JPS61250170A (en) * 1985-04-30 1986-11-07 Sakaguchi Dennetsu Kk Vapor phase chemical reaction furnace
JPS62296413A (en) * 1986-06-16 1987-12-23 Toshiba Ceramics Co Ltd Protective bell jar for epitaxial device
JPS63140082A (en) * 1986-12-01 1988-06-11 Hitachi Ltd Method for selective growth of thin metallic film
WO2011128729A1 (en) * 2010-04-12 2011-10-20 Memc Electronic Materials, S.P.A. Bell jar for siemens reactor including thermal radiation shield

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5275176A (en) * 1975-12-18 1977-06-23 Matsushita Electric Ind Co Ltd Method for vapor phase epitaxial growth

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5275176A (en) * 1975-12-18 1977-06-23 Matsushita Electric Ind Co Ltd Method for vapor phase epitaxial growth

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59200424A (en) * 1983-04-28 1984-11-13 Hitachi Electronics Eng Co Ltd Chemical vapor deposition device
JPS6024377A (en) * 1983-07-21 1985-02-07 Canon Inc Method and device for producing deposited film
JPS61246370A (en) * 1985-04-23 1986-11-01 Sakaguchi Dennetsu Kk Gaseous phase chemical reaction furnace
JPH048508B2 (en) * 1985-04-23 1992-02-17
JPS61250170A (en) * 1985-04-30 1986-11-07 Sakaguchi Dennetsu Kk Vapor phase chemical reaction furnace
JPS62296413A (en) * 1986-06-16 1987-12-23 Toshiba Ceramics Co Ltd Protective bell jar for epitaxial device
JPS63140082A (en) * 1986-12-01 1988-06-11 Hitachi Ltd Method for selective growth of thin metallic film
WO2011128729A1 (en) * 2010-04-12 2011-10-20 Memc Electronic Materials, S.P.A. Bell jar for siemens reactor including thermal radiation shield

Also Published As

Publication number Publication date
JPS627685B2 (en) 1987-02-18

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