JPS5691436A - Method for heating semiconductor substrate - Google Patents

Method for heating semiconductor substrate

Info

Publication number
JPS5691436A
JPS5691436A JP16810979A JP16810979A JPS5691436A JP S5691436 A JPS5691436 A JP S5691436A JP 16810979 A JP16810979 A JP 16810979A JP 16810979 A JP16810979 A JP 16810979A JP S5691436 A JPS5691436 A JP S5691436A
Authority
JP
Japan
Prior art keywords
semiconductor substrate
microwaves
heating
heated
electric field
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16810979A
Other languages
Japanese (ja)
Inventor
Hiroshi Yano
Masanao Itoga
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP16810979A priority Critical patent/JPS5691436A/en
Publication of JPS5691436A publication Critical patent/JPS5691436A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure

Abstract

PURPOSE:To heat a semiconductor substrate quickly and reduce a heat treatment time by applying an alternating electric field generated by microwaves to utilize dielectric heating. CONSTITUTION:In a metal box 1 with a microwave supplying antenna 2 on its ceiling, a material 3 of high dielectric loss, for example, ferrite, graphite, etc., is placed, and on it, a quartz plate 4 and a semiconductor substrate 5 to be heated are placed. Filling an inert gas in this metal box 1, an alternating electric field generated by microwaves is applied. The frequency of the microwaves is adjusted to about 0.3- 300GHz preferably 2.45GZHz. By so doing, the semiconductor substrate can be heated more quickly than by conventional resistance heating, and a time of treatment such as annealing can be reduced. In addition, the size and weight of the heating device can be reduced.
JP16810979A 1979-12-26 1979-12-26 Method for heating semiconductor substrate Pending JPS5691436A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16810979A JPS5691436A (en) 1979-12-26 1979-12-26 Method for heating semiconductor substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16810979A JPS5691436A (en) 1979-12-26 1979-12-26 Method for heating semiconductor substrate

Publications (1)

Publication Number Publication Date
JPS5691436A true JPS5691436A (en) 1981-07-24

Family

ID=15862010

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16810979A Pending JPS5691436A (en) 1979-12-26 1979-12-26 Method for heating semiconductor substrate

Country Status (1)

Country Link
JP (1) JPS5691436A (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57124426A (en) * 1981-01-26 1982-08-03 Nippon Telegr & Teleph Corp <Ntt> Annealing method for ion implanted silicon
JPS593927A (en) * 1982-06-29 1984-01-10 Fujitsu Ltd Etching of thin film
JPS5961130A (en) * 1982-09-30 1984-04-07 Fujitsu Ltd Method for fomration of metal silicide thin film
JPS59125621A (en) * 1982-12-28 1984-07-20 Fujitsu Ltd Device for manufacturing semiconductor
US4565669A (en) * 1983-04-21 1986-01-21 Cem Corporation Microwave ashing apparatus
WO1986001065A1 (en) * 1984-07-30 1986-02-13 Superwave Technology, Inc. Conveyorized microwave heating system
JPS62212A (en) * 1985-06-26 1987-01-06 井関農機株式会社 Threshing and sorting apparatus
JPS6249231U (en) * 1985-09-14 1987-03-26

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4825816A (en) * 1971-08-11 1973-04-04

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4825816A (en) * 1971-08-11 1973-04-04

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57124426A (en) * 1981-01-26 1982-08-03 Nippon Telegr & Teleph Corp <Ntt> Annealing method for ion implanted silicon
JPS593927A (en) * 1982-06-29 1984-01-10 Fujitsu Ltd Etching of thin film
JPS5961130A (en) * 1982-09-30 1984-04-07 Fujitsu Ltd Method for fomration of metal silicide thin film
JPS59125621A (en) * 1982-12-28 1984-07-20 Fujitsu Ltd Device for manufacturing semiconductor
JPH0377659B2 (en) * 1982-12-28 1991-12-11 Fujitsu Ltd
US4565669A (en) * 1983-04-21 1986-01-21 Cem Corporation Microwave ashing apparatus
WO1986001065A1 (en) * 1984-07-30 1986-02-13 Superwave Technology, Inc. Conveyorized microwave heating system
US4687895A (en) * 1984-07-30 1987-08-18 Superwave Technology, Inc. Conveyorized microwave heating system
JPS62212A (en) * 1985-06-26 1987-01-06 井関農機株式会社 Threshing and sorting apparatus
JPS6249231U (en) * 1985-09-14 1987-03-26

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