JPS59125621A - Device for manufacturing semiconductor - Google Patents

Abstract

PURPOSE:To obtain the device through which stable treatment is executed by feeding a detection output from a means detecting the temperature of the surface of a sample back to a microwave heating means and adjusting the temperature of a wafer substrate in a spare chamber or a film forming chamber to a fixed value. CONSTITUTION:Through-holes 21a, 23a are penetrated to a glass hold-down fitting 21 and the flange 23 of a waveguide 24, one end of an optical fiber 28 is brought into contact with the surface of quartz glass 20, the other end is combined with a temperature detector 29 such as an infrared sensor, infrared rays 31 generated from a wafer 1 are detected, and an output from the temperature detector is fed back to a power supply source for a microwave oscillation tube through a temperature-electricity converting circuit 30 to control the power of electromagnetic waves or the time of irradiation. Consequently, the time of oscillation of microwaves is, for example, set, and the time can be controlled so that the wafer temperature is kept within a range of 200-450 deg.C. That is, oscillation is continued when the wafer temperature is lower than a fixed temperature, and oscillation is stopped when it is higher than the fixed temperature.

Description

DETAILED DESCRIPTION OF THE INVENTION (1) Technical Field of the Invention The present invention relates to semiconductor manufacturing equipment, and particularly relates to in-line sppack equipment or chemical vapor deposition (C
VD) Regarding improvement of equipment.

(2) Background of technology Recently, in the semiconductor manufacturing process, sputtering or CV
For example, a contact window for making contact with each device formed on the wafer is formed as shown in the cross-sectional view of the semiconductor in FIG.
For example, aluminum (text A) is formed by sputtering.

In depositing such a wiring layer, as shown in FIG.
As shown in FIG. 1, an insulating layer 2 made of phosphor silica glass (PSG) or the like is formed on the wafer 1 on which devices are formed, and a contact window 3 is formed on the insulating film layer 2. When forming pattern 4, the thickness of PSGji is 1 μm.
When the width W of the contact window 3 is extremely small, the wiring pattern 4 of the A pattern is formed in a convex shape in the contact window 3, and the Δ pattern wiring layer near the edge portion 2a of the pscl'i. The thickness becomes extremely thin.

Generally, ideally, the thicknesses DI, D2 . D3
should be formed to have equal thickness.

When the A literary pad 4 is attached as shown in Figure 1 (al), the part indicated by 3a is thin and has the disadvantage of high resistance when current is applied, as well as pattern breakage, etc., which reduces reliability. Often significantly reduced.

In order to form the humanities wiring pattern layer into the ideal pattern shape shown in Figure 1 (bl), it is necessary to heat the wafer to 200 to 450°C. It was necessary that the wafer substrate temperature be maintained at 200 to 450'C during the process.

This is the wafer substrate temperature necessary to increase the moving speed of the atoms in sentence A.

(3) Prior art and problems The schematic configuration of the conventional in-line sputtering apparatus described above is shown in FIG. In FIG. 2, reference numeral 5 denotes a sender where wafer substrates are taken in and taken out, and the wafer is inserted into a load lock 7 through a valve 6, and a valve 9 connected to the sputtering chamber 10 is closed and the valve 8 is opened to lock the wafer. The inside of the load lock 7 is in a vacuum state, and the inside of the sputtering chamber 10 is made into a vacuum state via the main l\\lube 11, but the valve 9 is opened and the wafer in the load lock 7 is inserted into the sputtering chamber 10, and the valve 9 is closed. close. At this time, the valve 12 connecting the funnel lock 13 and the spackle chamber]0 is closed.

After sputtering is completed in the sputtering chamber 10, the evaporator on which wiring layers and the like have been formed is sent to a load lock 13.

In this case, the valve 12 connecting the load lock 13 and the sputtering chamber
Also, the valve 15 connected to the receiver 16 is closed, and the valve 1
4 is opened and the 10-F lock 13 is evacuated to create a vacuum state, and then the valve 12 is opened and the sputtered wafer is sent into the load lock 13.

Next, the valve 12 is closed, the load lock 13 is brought to atmospheric pressure using an inert gas such as N2, and then the valve 15 is opened to take out 1M wafers in the load lock 13 into the receiver 16.

In such an in-line spacing apparatus, the load lock 7 has a function of not allowing atmospheric air to enter the sprinkling chamber and a function of raising the temperature of the wafer to 200 to 450''C.

The heating inside this load lock is performed by setting the heating time to match the processing time, and there is no particular problem when it is operating compactly, but within this line When problems such as problems or fluctuations in the pumping speed occur, the urethane is fed into the spuck chamber before reaching a predetermined substrate temperature and a film is formed, resulting in defective products.

(5) Purpose of the Invention In view of the above-mentioned drawbacks, it is an object of the present invention to provide a semiconductor manufacturing apparatus that enables stable processing by monitoring the temperature inside the loading chamber, that is, the preheating chamber, in a non-contact manner. It is something.

(5) Structure of the Invention According to the present invention, the object is to provide a microwave heating means for heating a sample such as Ueno 1 carried into a preliminary chamber or a film forming chamber of a film forming apparatus using microwaves, and and a detection means for detecting the temperature of the surface, and the detection output of the detection means is fed back to the microwave heating means to adjust the temperature of the wafer substrate in the preliminary chamber or the film forming chamber to a constant value. This is achieved by providing a semiconductor manufacturing apparatus characterized by the following.

(6) Examples of the invention An embodiment of the present invention will be described below with reference to the drawings.

FIG. 3 shows a cross section of the main part of the load drawer 7 shown in FIG. 2 of the present invention, that is, the main part of the preliminary chamber, and 17 has a substantially rectangular cross section, extends in the direction of the paper, and has a sender on the front side. 5 is a vacuum chamber in which a suba ivy chamber 10 is arranged as shown in FIG. Two rails 18 are also laid in the vacuum chamber from the sender 5 side toward the suba ivy chamber 10, and one shell of the sample 1, such as Ueno\, is continuously sent onto the rails.

A window 19 is formed in the upper part of the vacuum chamber 17, the upper part of the window is covered with quartz glass 20, and a glass holding fitting 21 and an O-
The inside of the vacuum chamber is maintained at a high degree of vacuum by the ring sealing material 22.

A waveguide 24 having a flange portion 23 is placed on the top of the glass holding fitting 21 .

A microwave oscillation tube 25 is provided on the side of the waveguide, and an antenna 26 is protruded through a hole bored in the waveguide wall to oscillate microwaves from a microwave output end 27 to cause the wafer 1 to pass through the quartz glass 20. Let it heat up.

The electromagnetic field oscillated from the microwave oscillation tube 25 heats only the dielectric wafer and does not heat the other metal parts or quartz glass forming the vacuum chamber.

Since the waveguide is exposed to the atmosphere, there is no need to provide a heating device in a vacuum chamber, allowing greater flexibility in designing the heating device. Furthermore, since the microwave falls to the ground potential when it hits the metal part, the wafer is not affected by heat accumulation in the metal part, unlike heating by a lamp heater.

In the present invention, the glass holding fitting 21 and the flange 23 of the waveguide 24 have through holes 21. a, one end of the optical fiber 28 is brought into contact with the surface of the quartz glass 20 by passing it through 23a, and the 4h end is connected to a temperature detector 2 such as an infrared sensor.
9 to detect the infrared rays 31 generated from the wafer 1, and return the output of the temperature detector to the power supply source of the microwave oscillation tube through the temperature-electrical conversion circuit 30 to control the power or irradiation time of the electromagnetic waves. Do it like this.

According to the above configuration, for example, it is possible to set the oscillation time of the microwave and control the time so that the wafer temperature is in the range of 200 to 450'C.

That is, if the wafer temperature is lower than a predetermined temperature, the oscillation is continued, and if the wafer temperature is higher than the predetermined temperature, the oscillation is stopped.

In the above embodiment, an in-line film forming apparatus in which the A cross line pattern is formed using a spuck apparatus was described in the preliminary chamber, but the wafer temperature can also be controlled using the same configuration in the film forming chamber. It is possible. Furthermore, the present invention is not limited thereto, and can of course be applied to the case where various thin films are formed by, for example, a CVD apparatus.

(7) Effects of the Invention As explained above in detail, according to the semiconductor manufacturing apparatus of the present invention, troubles in the in-line thin film forming apparatus or abnormalities such as fluctuations in pumping speed can be resolved in a timely manner, unlike conventional methods. Compared to temperature control, this method has the characteristics of being able to measure the surface temperature of the sample in a non-contact state, as well as being able to control the time or output by applying a feed hack to the heating means, allowing for stable processing. .

[Brief explanation of the drawing]

Figure 1 (al, (bl) is a side sectional view for explaining the human wiring pattern state of a conventional semiconductor device, Figure 2 is an exhaust system diagram showing the schematic configuration of a conventional in-line spacing device, and Figure 3 2 is a side sectional view when the preliminary chamber of FIG. 2 is applied to the present invention. 1... Si substrate (wafer), 2... Insulating film,
3... Contact window, 4... Wiring Jfi (
A, etc.), 5... Sender, 6, 8. 9.1
1.12.14.15...Valve, 7゜13...Load lock, IO...Spack chamber, 16...
Lesoha, 17...X empty $L t8...rail, 19...window, 20...quartz glass, 21
... Glass holding fitting, 22 ... O-ring seal, 23 ... Flange section, 24 ... Waveguide, 25 ... Micro oscillation tube, 26 ... Antenna, 27 ... Micro Wave output end, 28...
Optical fiber, 29...Temperature detector,
30...Temperature-air conversion circuit, 31...Infrared rays.

Claims (1)

[Claims] A microwave heating means for heating a sample such as a wafer carried into a preliminary chamber or a film forming chamber of a film forming apparatus using microwaves, and a detection means for detecting the temperature of the surface of the sample, the detection means A semiconductor manufacturing apparatus characterized in that the detection output of is fed back to the microwave heating means to adjust the temperature of the wafer substrate in the preliminary chamber or the film forming chamber to a constant value.