JPS57178316A - Manufacture of semiconductor element and device therefor - Google Patents

Manufacture of semiconductor element and device therefor

Info

Publication number
JPS57178316A
JPS57178316A JP6247781A JP6247781A JPS57178316A JP S57178316 A JPS57178316 A JP S57178316A JP 6247781 A JP6247781 A JP 6247781A JP 6247781 A JP6247781 A JP 6247781A JP S57178316 A JPS57178316 A JP S57178316A
Authority
JP
Japan
Prior art keywords
microwave
irradiated
heated
processed substance
semiconductor wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6247781A
Other languages
Japanese (ja)
Inventor
Haruo Amada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP6247781A priority Critical patent/JPS57178316A/en
Publication of JPS57178316A publication Critical patent/JPS57178316A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/511—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using microwave discharges
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
    • C23C16/481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation by radiant heating of the substrate

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Die Bonding (AREA)

Abstract

PURPOSE:To prevent the growth of unnecessary products by a method wherein microwave is irradiated at a processed substance and only the processed substance or only a part of the processed substance is heated to permit heating for the raw material manufacturing a semiconductor element which is the processed substance and reactant only. CONSTITUTION:A semiconductor wafer 2 is mounted on a wafer supporting base 3 and microwave 4 is generated from a microwave generating section 5 and the microwave is irradiated in a processing chamber 1 by utilizing a microwave transmission section 6. The semiconductor wafer 2 is heated up to a predetermined temperature by the irradiated microwave 4. When the semiconductor wafer 2 is heated up to a predetermined temperature, reactive gas 7 required for the growth of a semiconductor protection film is supplied in the processing chamber 1 from a reactive gas supply section 8.
JP6247781A 1981-04-27 1981-04-27 Manufacture of semiconductor element and device therefor Pending JPS57178316A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6247781A JPS57178316A (en) 1981-04-27 1981-04-27 Manufacture of semiconductor element and device therefor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6247781A JPS57178316A (en) 1981-04-27 1981-04-27 Manufacture of semiconductor element and device therefor

Publications (1)

Publication Number Publication Date
JPS57178316A true JPS57178316A (en) 1982-11-02

Family

ID=13201300

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6247781A Pending JPS57178316A (en) 1981-04-27 1981-04-27 Manufacture of semiconductor element and device therefor

Country Status (1)

Country Link
JP (1) JPS57178316A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5922323A (en) * 1982-07-28 1984-02-04 Fujitsu Ltd Manufacture of semiconductor device
JPS5925229A (en) * 1982-07-30 1984-02-09 Fujitsu Ltd Method for heating semiconductor substrate
JPS59125621A (en) * 1982-12-28 1984-07-20 Fujitsu Ltd Device for manufacturing semiconductor

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5360882A (en) * 1976-11-15 1978-05-31 Toshiba Corp Generating apparatus for activated gas

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5360882A (en) * 1976-11-15 1978-05-31 Toshiba Corp Generating apparatus for activated gas

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5922323A (en) * 1982-07-28 1984-02-04 Fujitsu Ltd Manufacture of semiconductor device
JPS5925229A (en) * 1982-07-30 1984-02-09 Fujitsu Ltd Method for heating semiconductor substrate
JPH0376021B2 (en) * 1982-07-30 1991-12-04 Fujitsu Ltd
JPS59125621A (en) * 1982-12-28 1984-07-20 Fujitsu Ltd Device for manufacturing semiconductor
JPH0377659B2 (en) * 1982-12-28 1991-12-11 Fujitsu Ltd

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