JPS5796535A - Cvd device - Google Patents

Cvd device

Info

Publication number
JPS5796535A
JPS5796535A JP17292880A JP17292880A JPS5796535A JP S5796535 A JPS5796535 A JP S5796535A JP 17292880 A JP17292880 A JP 17292880A JP 17292880 A JP17292880 A JP 17292880A JP S5796535 A JPS5796535 A JP S5796535A
Authority
JP
Japan
Prior art keywords
wafer
reaction chamber
heater
supporter
heated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP17292880A
Other languages
Japanese (ja)
Inventor
Yasuhide Fujiwara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Suwa Seikosha KK
Original Assignee
Seiko Epson Corp
Suwa Seikosha KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp, Suwa Seikosha KK filed Critical Seiko Epson Corp
Priority to JP17292880A priority Critical patent/JPS5796535A/en
Publication of JPS5796535A publication Critical patent/JPS5796535A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)

Abstract

PURPOSE:To make it possible to anneal a chemical vapor growth film within a reaction chamber without taking out an wafer by installing a heating means that heats directly the wafer on an wafer supporter in a chemical vapor deposition device. CONSTITUTION:A heater 12 is mounted on supporters 8, 11 of an wafer. To the heater 12 an electric power is supplied through conductive substance 15 and an electrical wiring 6 burried in the supporter 11. The wafer is kept by a claw provided on the heater 12. One utilization is this device is described in the following. A silicon wafer is set in a reaction chamber 5 and is made to be a reduced pressure state. In succession, after raw gas was introduced from a gas introducing part 3, and a vapor growth reaction was performed, contents in the reaction chamber 5 is substituted for inactive gas. At that time, electric power is supplied to the heater 12, and the wafer is heated for performing annealing. lastly, the wafer is taken out. Because the whole of the reaction chamber 5 is not heated, the wafer surface would not be stained by evaporation of adhered substance on the wall surface of the reaction chamber.
JP17292880A 1980-12-08 1980-12-08 Cvd device Pending JPS5796535A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17292880A JPS5796535A (en) 1980-12-08 1980-12-08 Cvd device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17292880A JPS5796535A (en) 1980-12-08 1980-12-08 Cvd device

Publications (1)

Publication Number Publication Date
JPS5796535A true JPS5796535A (en) 1982-06-15

Family

ID=15950944

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17292880A Pending JPS5796535A (en) 1980-12-08 1980-12-08 Cvd device

Country Status (1)

Country Link
JP (1) JPS5796535A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61173252A (en) * 1985-01-28 1986-08-04 Mitsubishi Electric Corp Formation of photomask material
JPS6425423A (en) * 1987-07-21 1989-01-27 Anelva Corp Heating of substrate in low pressure cvd device
US6468826B1 (en) 1998-06-24 2002-10-22 Nec Corporation Solid state image sensor using an intermediate refractive index antireflection film and method for fabricating the same

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61173252A (en) * 1985-01-28 1986-08-04 Mitsubishi Electric Corp Formation of photomask material
JPH0434142B2 (en) * 1985-01-28 1992-06-05 Mitsubishi Electric Corp
JPS6425423A (en) * 1987-07-21 1989-01-27 Anelva Corp Heating of substrate in low pressure cvd device
US6468826B1 (en) 1998-06-24 2002-10-22 Nec Corporation Solid state image sensor using an intermediate refractive index antireflection film and method for fabricating the same

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