JPS6430226A - Dry etching device - Google Patents

Dry etching device

Info

Publication number
JPS6430226A
JPS6430226A JP18696487A JP18696487A JPS6430226A JP S6430226 A JPS6430226 A JP S6430226A JP 18696487 A JP18696487 A JP 18696487A JP 18696487 A JP18696487 A JP 18696487A JP S6430226 A JPS6430226 A JP S6430226A
Authority
JP
Japan
Prior art keywords
etching rate
electrode
heater
heaters
sample
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP18696487A
Other languages
Japanese (ja)
Inventor
Toshiro Mihashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Priority to JP18696487A priority Critical patent/JPS6430226A/en
Publication of JPS6430226A publication Critical patent/JPS6430226A/en
Pending legal-status Critical Current

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  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE:To contrive the equalization of an etching rare by a method wherein a heater located it a place to correspond to a part, in which the etching rate to a sample is slow, among a plurality of heaters is actuated independently and the part is heated. CONSTITUTION:A grounded tabular upper electrode 14 and a tabular lower electrode 15 arranged in opposition to this electrode are provided in an etching chamber 11. The electrode 15 has a protruding part 20 for holding such a sample A as a wafer to be etched at its upper part and moreover, with a circulating path 21 for a cooling water 21a provided in its interior for holding uniformly the temperature of the whole electrode, heaters 22 ranging from several pieces to several hundred pieces are buried uniformly on the circulating path 21 like the squares on a gobang. Variable power sources, 23 are respectively connected to each heater 22 and the heaters are respectively designed in a structure heatable independently. Some heater 22 located at a place to correspond to a part, in which an etching rate to the sample is slow, is actuated by the power source 23 connected to the heater 22 and the part is heated until the etching rate becomes an etching rate equal with that in other regions of the wafer. Thereby, the excellent uniformity of the etching rate can be obtained in the wafer simply and precisely.
JP18696487A 1987-07-27 1987-07-27 Dry etching device Pending JPS6430226A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18696487A JPS6430226A (en) 1987-07-27 1987-07-27 Dry etching device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18696487A JPS6430226A (en) 1987-07-27 1987-07-27 Dry etching device

Publications (1)

Publication Number Publication Date
JPS6430226A true JPS6430226A (en) 1989-02-01

Family

ID=16197808

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18696487A Pending JPS6430226A (en) 1987-07-27 1987-07-27 Dry etching device

Country Status (1)

Country Link
JP (1) JPS6430226A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100249182B1 (en) * 1996-11-04 2000-03-15 김영환 Method for manufacturing semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100249182B1 (en) * 1996-11-04 2000-03-15 김영환 Method for manufacturing semiconductor device

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