JPS6430226A - Dry etching device - Google Patents
Dry etching deviceInfo
- Publication number
- JPS6430226A JPS6430226A JP18696487A JP18696487A JPS6430226A JP S6430226 A JPS6430226 A JP S6430226A JP 18696487 A JP18696487 A JP 18696487A JP 18696487 A JP18696487 A JP 18696487A JP S6430226 A JPS6430226 A JP S6430226A
- Authority
- JP
- Japan
- Prior art keywords
- etching rate
- electrode
- heater
- heaters
- sample
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Drying Of Semiconductors (AREA)
Abstract
PURPOSE:To contrive the equalization of an etching rare by a method wherein a heater located it a place to correspond to a part, in which the etching rate to a sample is slow, among a plurality of heaters is actuated independently and the part is heated. CONSTITUTION:A grounded tabular upper electrode 14 and a tabular lower electrode 15 arranged in opposition to this electrode are provided in an etching chamber 11. The electrode 15 has a protruding part 20 for holding such a sample A as a wafer to be etched at its upper part and moreover, with a circulating path 21 for a cooling water 21a provided in its interior for holding uniformly the temperature of the whole electrode, heaters 22 ranging from several pieces to several hundred pieces are buried uniformly on the circulating path 21 like the squares on a gobang. Variable power sources, 23 are respectively connected to each heater 22 and the heaters are respectively designed in a structure heatable independently. Some heater 22 located at a place to correspond to a part, in which an etching rate to the sample is slow, is actuated by the power source 23 connected to the heater 22 and the part is heated until the etching rate becomes an etching rate equal with that in other regions of the wafer. Thereby, the excellent uniformity of the etching rate can be obtained in the wafer simply and precisely.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP18696487A JPS6430226A (en) | 1987-07-27 | 1987-07-27 | Dry etching device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP18696487A JPS6430226A (en) | 1987-07-27 | 1987-07-27 | Dry etching device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6430226A true JPS6430226A (en) | 1989-02-01 |
Family
ID=16197808
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP18696487A Pending JPS6430226A (en) | 1987-07-27 | 1987-07-27 | Dry etching device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6430226A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100249182B1 (en) * | 1996-11-04 | 2000-03-15 | 김영환 | Method for manufacturing semiconductor device |
-
1987
- 1987-07-27 JP JP18696487A patent/JPS6430226A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100249182B1 (en) * | 1996-11-04 | 2000-03-15 | 김영환 | Method for manufacturing semiconductor device |
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