JPS57128940A - Heat treating method for substrate - Google Patents

Heat treating method for substrate

Info

Publication number
JPS57128940A
JPS57128940A JP1515781A JP1515781A JPS57128940A JP S57128940 A JPS57128940 A JP S57128940A JP 1515781 A JP1515781 A JP 1515781A JP 1515781 A JP1515781 A JP 1515781A JP S57128940 A JPS57128940 A JP S57128940A
Authority
JP
Japan
Prior art keywords
substrate
gas
bottom plate
conveying path
space
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1515781A
Other languages
Japanese (ja)
Inventor
Masanori Noda
Hisao Hayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP1515781A priority Critical patent/JPS57128940A/en
Publication of JPS57128940A publication Critical patent/JPS57128940A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67784—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations using air tracks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)

Abstract

PURPOSE:To prevent contamination of a substrate and to equalize temperature distribution in heat treatment, by providing a plurality of gas jetting holes in the bottom surface of a conveying path, jetting heated gas, floating and moving semiconductor substrate, and performing heat treatment. CONSTITUTION:A tunnel shaped flat space 2 which is to become the conveying path of the substrate 1 to be heat-treated is prepared. A plurality of gas holes are perforated in the bottom plate 4. The gas holes 6 are inclined in one direction so that their openings are directed toward an outlet 2b. A space 7 is provided under the bottom plate 4 of the flat space 2. Gas introducing ports 8 are provided in the side wall thereof. In this constitution, the heated gas such as N2, O2, H2, and Ar is sent in, and jetted into the tunnel shaped space 2 of the substrate conveying path. Then, the substrate 1 is heated and floated on the bottom plate 4, and moved to the outlet 2b. Since the substrate 1 is heat-treated in the floated state, the contamination is less and the uniformity in temperature distribution is excellent.
JP1515781A 1981-02-04 1981-02-04 Heat treating method for substrate Pending JPS57128940A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1515781A JPS57128940A (en) 1981-02-04 1981-02-04 Heat treating method for substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1515781A JPS57128940A (en) 1981-02-04 1981-02-04 Heat treating method for substrate

Publications (1)

Publication Number Publication Date
JPS57128940A true JPS57128940A (en) 1982-08-10

Family

ID=11880957

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1515781A Pending JPS57128940A (en) 1981-02-04 1981-02-04 Heat treating method for substrate

Country Status (1)

Country Link
JP (1) JPS57128940A (en)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS594040A (en) * 1982-06-30 1984-01-10 Fujitsu Ltd Semiconductor substrate carrying method
JPS6163023A (en) * 1984-09-04 1986-04-01 Tokyo Denshi Kagaku Kabushiki Heat treating device for thin plate type substance to be treated
JPH03270150A (en) * 1990-03-20 1991-12-02 Dan Kagaku:Kk Wafer conveyance apparatus
WO2007001179A2 (en) * 2005-04-29 2007-01-04 Fico B.V. Method and device for supplying and discharging carriers with electronic components
JP2007182304A (en) * 2006-01-06 2007-07-19 Tokyo Electron Ltd Substrate carrying device and its method, and computer program
US7758340B2 (en) 2006-01-06 2010-07-20 Tokyo Electron Limited Heating device and heating method
US7993081B2 (en) 2006-01-06 2011-08-09 Tokyo Electron Limited Substrate carrying device, substrate carrying method and computer-readable storage medium
US9177845B2 (en) 2008-08-13 2015-11-03 Ers Electronic Gmbh Method and apparatus for thermally processing plastic discs, in particular mould wafers
CN110402488A (en) * 2017-03-17 2019-11-01 应用材料公司 For electronic device manufacturing system, the method and apparatus of pollution to be heated the substrate and reduced in loader mechanism
CN112888572A (en) * 2018-10-10 2021-06-01 科迪华公司 System and method for supporting and transporting substrates

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS594040A (en) * 1982-06-30 1984-01-10 Fujitsu Ltd Semiconductor substrate carrying method
JPS6163023A (en) * 1984-09-04 1986-04-01 Tokyo Denshi Kagaku Kabushiki Heat treating device for thin plate type substance to be treated
JPH03270150A (en) * 1990-03-20 1991-12-02 Dan Kagaku:Kk Wafer conveyance apparatus
WO2007001179A3 (en) * 2005-04-29 2007-08-16 Fico Bv Method and device for supplying and discharging carriers with electronic components
WO2007001179A2 (en) * 2005-04-29 2007-01-04 Fico B.V. Method and device for supplying and discharging carriers with electronic components
US7758340B2 (en) 2006-01-06 2010-07-20 Tokyo Electron Limited Heating device and heating method
JP2007182304A (en) * 2006-01-06 2007-07-19 Tokyo Electron Ltd Substrate carrying device and its method, and computer program
US7993081B2 (en) 2006-01-06 2011-08-09 Tokyo Electron Limited Substrate carrying device, substrate carrying method and computer-readable storage medium
US8292549B2 (en) 2006-01-06 2012-10-23 Tokyo Electron Limited Substrate carrying device, substrate carrying method and computer-readable storage medium
US9177845B2 (en) 2008-08-13 2015-11-03 Ers Electronic Gmbh Method and apparatus for thermally processing plastic discs, in particular mould wafers
CN110402488A (en) * 2017-03-17 2019-11-01 应用材料公司 For electronic device manufacturing system, the method and apparatus of pollution to be heated the substrate and reduced in loader mechanism
CN112888572A (en) * 2018-10-10 2021-06-01 科迪华公司 System and method for supporting and transporting substrates
CN112888572B (en) * 2018-10-10 2024-04-16 科迪华公司 System and method for supporting and transporting a substrate
US11985887B2 (en) 2018-10-10 2024-05-14 Kateeva, Inc. Systems and methods for supporting and conveying a substrate

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