JPS5754328A - Decompressed vapor-phase growing device - Google Patents
Decompressed vapor-phase growing deviceInfo
- Publication number
- JPS5754328A JPS5754328A JP12931180A JP12931180A JPS5754328A JP S5754328 A JPS5754328 A JP S5754328A JP 12931180 A JP12931180 A JP 12931180A JP 12931180 A JP12931180 A JP 12931180A JP S5754328 A JPS5754328 A JP S5754328A
- Authority
- JP
- Japan
- Prior art keywords
- gas
- pipe
- substrates
- gas pipes
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45561—Gas plumbing upstream of the reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45578—Elongated nozzles, tubes with holes
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
Abstract
PURPOSE:To prevent deterioration of a film and thereby obtain Si glass of high quality by providing the decompressed vapor-phase growing device with the first and second gas pipes, arranging at least one of them in plural and along the axial direction of a reaction pipe, and providing them with a plurality of jetting ports. CONSTITUTION:Substrates 1 are set standing close together on a sample table 2 and are inserted into the reaction pipe 3. And they are placed in an airtight condition by means of a cap 4 and heated in a vacuum. Moreover, in the center on the side of a cap 5 the first gas pipe 8 is arranged in one, while around the pipe 8 the second gas pipes 9 are arranged in six, for instance, and the second gas pipes 9 are provided with a plurality of gas jetting ports 15 distributed along the substrates 1, and from these ports gas is jetted like a shower. And, from the first gas pipe 8 oxygen 10 and nitrogen 11 are supplied and from the second gas pipes 9 nitrogen-diluted monosilane 13 is supplied, whereby a silicate glass film is formed on the substrates 1. By this constitution, the deterioration of the film caused at the time when the silicate glass is produced and thus the product can be made superior in quality.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12931180A JPS5754328A (en) | 1980-09-19 | 1980-09-19 | Decompressed vapor-phase growing device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12931180A JPS5754328A (en) | 1980-09-19 | 1980-09-19 | Decompressed vapor-phase growing device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5754328A true JPS5754328A (en) | 1982-03-31 |
Family
ID=15006426
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP12931180A Pending JPS5754328A (en) | 1980-09-19 | 1980-09-19 | Decompressed vapor-phase growing device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5754328A (en) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6010715A (en) * | 1983-06-30 | 1985-01-19 | Fujitsu Ltd | Device for chemical gas-phase growth |
JPS62214614A (en) * | 1986-03-17 | 1987-09-21 | Fujitsu Ltd | Reduced pressure cvd device |
JPS63240032A (en) * | 1987-03-27 | 1988-10-05 | Semiconductor Energy Lab Co Ltd | High-speed formation of si oxide film |
JPS6421917A (en) * | 1987-07-16 | 1989-01-25 | Fujitsu Ltd | Heating furnace processing method |
USRE36328E (en) * | 1988-03-31 | 1999-10-05 | Kabushiki Kaisha Toshiba | Semiconductor manufacturing apparatus including temperature control mechanism |
EP4060077A3 (en) * | 2021-03-16 | 2022-12-14 | Kokusai Electric Corp. | Substrate processing apparatus, method of manufacturing semiconductor device and program |
-
1980
- 1980-09-19 JP JP12931180A patent/JPS5754328A/en active Pending
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6010715A (en) * | 1983-06-30 | 1985-01-19 | Fujitsu Ltd | Device for chemical gas-phase growth |
JPH0241166B2 (en) * | 1983-06-30 | 1990-09-14 | Fujitsu Ltd | |
JPS62214614A (en) * | 1986-03-17 | 1987-09-21 | Fujitsu Ltd | Reduced pressure cvd device |
JPS63240032A (en) * | 1987-03-27 | 1988-10-05 | Semiconductor Energy Lab Co Ltd | High-speed formation of si oxide film |
JPS6421917A (en) * | 1987-07-16 | 1989-01-25 | Fujitsu Ltd | Heating furnace processing method |
USRE36328E (en) * | 1988-03-31 | 1999-10-05 | Kabushiki Kaisha Toshiba | Semiconductor manufacturing apparatus including temperature control mechanism |
EP4060077A3 (en) * | 2021-03-16 | 2022-12-14 | Kokusai Electric Corp. | Substrate processing apparatus, method of manufacturing semiconductor device and program |
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