JPS5754328A - Decompressed vapor-phase growing device - Google Patents

Decompressed vapor-phase growing device

Info

Publication number
JPS5754328A
JPS5754328A JP12931180A JP12931180A JPS5754328A JP S5754328 A JPS5754328 A JP S5754328A JP 12931180 A JP12931180 A JP 12931180A JP 12931180 A JP12931180 A JP 12931180A JP S5754328 A JPS5754328 A JP S5754328A
Authority
JP
Japan
Prior art keywords
gas
pipe
substrates
gas pipes
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12931180A
Other languages
Japanese (ja)
Inventor
Masao Honda
Kazuhiro Nakao
Hiromitsu Mishimagi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP12931180A priority Critical patent/JPS5754328A/en
Publication of JPS5754328A publication Critical patent/JPS5754328A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45561—Gas plumbing upstream of the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45578—Elongated nozzles, tubes with holes

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)

Abstract

PURPOSE:To prevent deterioration of a film and thereby obtain Si glass of high quality by providing the decompressed vapor-phase growing device with the first and second gas pipes, arranging at least one of them in plural and along the axial direction of a reaction pipe, and providing them with a plurality of jetting ports. CONSTITUTION:Substrates 1 are set standing close together on a sample table 2 and are inserted into the reaction pipe 3. And they are placed in an airtight condition by means of a cap 4 and heated in a vacuum. Moreover, in the center on the side of a cap 5 the first gas pipe 8 is arranged in one, while around the pipe 8 the second gas pipes 9 are arranged in six, for instance, and the second gas pipes 9 are provided with a plurality of gas jetting ports 15 distributed along the substrates 1, and from these ports gas is jetted like a shower. And, from the first gas pipe 8 oxygen 10 and nitrogen 11 are supplied and from the second gas pipes 9 nitrogen-diluted monosilane 13 is supplied, whereby a silicate glass film is formed on the substrates 1. By this constitution, the deterioration of the film caused at the time when the silicate glass is produced and thus the product can be made superior in quality.
JP12931180A 1980-09-19 1980-09-19 Decompressed vapor-phase growing device Pending JPS5754328A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12931180A JPS5754328A (en) 1980-09-19 1980-09-19 Decompressed vapor-phase growing device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12931180A JPS5754328A (en) 1980-09-19 1980-09-19 Decompressed vapor-phase growing device

Publications (1)

Publication Number Publication Date
JPS5754328A true JPS5754328A (en) 1982-03-31

Family

ID=15006426

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12931180A Pending JPS5754328A (en) 1980-09-19 1980-09-19 Decompressed vapor-phase growing device

Country Status (1)

Country Link
JP (1) JPS5754328A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6010715A (en) * 1983-06-30 1985-01-19 Fujitsu Ltd Device for chemical gas-phase growth
JPS62214614A (en) * 1986-03-17 1987-09-21 Fujitsu Ltd Reduced pressure cvd device
JPS63240032A (en) * 1987-03-27 1988-10-05 Semiconductor Energy Lab Co Ltd High-speed formation of si oxide film
JPS6421917A (en) * 1987-07-16 1989-01-25 Fujitsu Ltd Heating furnace processing method
USRE36328E (en) * 1988-03-31 1999-10-05 Kabushiki Kaisha Toshiba Semiconductor manufacturing apparatus including temperature control mechanism
EP4060077A3 (en) * 2021-03-16 2022-12-14 Kokusai Electric Corp. Substrate processing apparatus, method of manufacturing semiconductor device and program

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6010715A (en) * 1983-06-30 1985-01-19 Fujitsu Ltd Device for chemical gas-phase growth
JPH0241166B2 (en) * 1983-06-30 1990-09-14 Fujitsu Ltd
JPS62214614A (en) * 1986-03-17 1987-09-21 Fujitsu Ltd Reduced pressure cvd device
JPS63240032A (en) * 1987-03-27 1988-10-05 Semiconductor Energy Lab Co Ltd High-speed formation of si oxide film
JPS6421917A (en) * 1987-07-16 1989-01-25 Fujitsu Ltd Heating furnace processing method
USRE36328E (en) * 1988-03-31 1999-10-05 Kabushiki Kaisha Toshiba Semiconductor manufacturing apparatus including temperature control mechanism
EP4060077A3 (en) * 2021-03-16 2022-12-14 Kokusai Electric Corp. Substrate processing apparatus, method of manufacturing semiconductor device and program

Similar Documents

Publication Publication Date Title
CA2246805A1 (en) Device and method for preparing and/or coating the surfaces of hollow construction elements
JPS5754328A (en) Decompressed vapor-phase growing device
JPS54153740A (en) Continuous vacuum treatment apparatus
JPS5319181A (en) Low pressure reaction apparatus
CA2015700A1 (en) Method of transferring sample
JPS6481216A (en) Vapor growth apparatus
CA2051214A1 (en) Vacuum Film Forming Apparatus
JPS6412522A (en) Semiconductor crystal epitaxy method
JPS55110030A (en) Method for vapor growth
JPS5754329A (en) Decompressed vapor-phase growing device
JPS5320763A (en) Crystal growing method and apparatus
JPS6481214A (en) Vapor growth apparatus
DE3560859D1 (en) Method for diluting a gas, or mixture of gases, with air before discharge to atmosphere
JPS57121234A (en) Plasma processing and device thereof
JPS56105622A (en) Manufacture of silicon stick for semiconductor
JPS56155635A (en) Apparatus for oxide film growth in vacuum cvd process
JPS5591815A (en) Silicon epitaxial growth
JPS57155366A (en) Apparatus for manufacturing semiconductor
JPS6441211A (en) Semiconductor growth device
JPS57189947A (en) Substrate transportation device
JPS57121235A (en) Plasma processing and device thereof
JPS5447568A (en) Deposition method
JPS57175797A (en) Epitaxial growth under reduced pressure
JPS5216974A (en) Method of manufacturing air phase epitachisial growing layer of chemic al compound semiconductor
JPS57121233A (en) Plasma process device