JPS6441211A - Semiconductor growth device - Google Patents
Semiconductor growth deviceInfo
- Publication number
- JPS6441211A JPS6441211A JP19626287A JP19626287A JPS6441211A JP S6441211 A JPS6441211 A JP S6441211A JP 19626287 A JP19626287 A JP 19626287A JP 19626287 A JP19626287 A JP 19626287A JP S6441211 A JPS6441211 A JP S6441211A
- Authority
- JP
- Japan
- Prior art keywords
- silane
- substrate
- high purity
- heavy hydrogen
- solid silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Chemical Vapour Deposition (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Abstract
PURPOSE:To form an silicon film having high quality by forming silane containing an extremely little impurity from heavy hydrogen having high purity and solid silicon having high purity and discharging formed silane onto a heated substrate. CONSTITUTION:A reaction chamber 8, in which heavy hydrogen and solid silicon are reacted, and a heating apparatus 9 for the reaction chamber 8 are disposed to an silane forming device 1. A blow-off port 7 supplies the upper section of a substrate 5 with formed silane. A substrate holding section 3 holds the substrate 5 arranged while a board surface is oppositely faced in front of the blow-off port 7. Consequently, silane as a raw material gas can be formed directly from heavy hydrogen gas having high purity and solid silicon having high purity on growth. Formed silane is discharged onto the heated substrate 5. Accordingly, an silicon film having high quality is shaped.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP19626287A JPS6441211A (en) | 1987-08-07 | 1987-08-07 | Semiconductor growth device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP19626287A JPS6441211A (en) | 1987-08-07 | 1987-08-07 | Semiconductor growth device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6441211A true JPS6441211A (en) | 1989-02-13 |
Family
ID=16354881
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP19626287A Pending JPS6441211A (en) | 1987-08-07 | 1987-08-07 | Semiconductor growth device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6441211A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6252270B1 (en) | 1997-04-28 | 2001-06-26 | Agere Systems Guardian Corp. | Increased cycle specification for floating-gate and method of manufacture thereof |
US6309938B1 (en) | 1997-04-28 | 2001-10-30 | Agere Systems Guardian Corp. | Deuterated bipolar transistor and method of manufacture thereof |
US6365511B1 (en) | 1999-06-03 | 2002-04-02 | Agere Systems Guardian Corp. | Tungsten silicide nitride as a barrier for high temperature anneals to improve hot carrier reliability |
US6605529B2 (en) | 2001-05-11 | 2003-08-12 | Agere Systems Inc. | Method of creating hydrogen isotope reservoirs in a semiconductor device |
-
1987
- 1987-08-07 JP JP19626287A patent/JPS6441211A/en active Pending
Non-Patent Citations (1)
Title |
---|
SOLID-STATE ELECTRONICS=1968 * |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6252270B1 (en) | 1997-04-28 | 2001-06-26 | Agere Systems Guardian Corp. | Increased cycle specification for floating-gate and method of manufacture thereof |
US6309938B1 (en) | 1997-04-28 | 2001-10-30 | Agere Systems Guardian Corp. | Deuterated bipolar transistor and method of manufacture thereof |
US6365511B1 (en) | 1999-06-03 | 2002-04-02 | Agere Systems Guardian Corp. | Tungsten silicide nitride as a barrier for high temperature anneals to improve hot carrier reliability |
US6605529B2 (en) | 2001-05-11 | 2003-08-12 | Agere Systems Inc. | Method of creating hydrogen isotope reservoirs in a semiconductor device |
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