JPS6441211A - Semiconductor growth device - Google Patents

Semiconductor growth device

Info

Publication number
JPS6441211A
JPS6441211A JP19626287A JP19626287A JPS6441211A JP S6441211 A JPS6441211 A JP S6441211A JP 19626287 A JP19626287 A JP 19626287A JP 19626287 A JP19626287 A JP 19626287A JP S6441211 A JPS6441211 A JP S6441211A
Authority
JP
Japan
Prior art keywords
silane
substrate
high purity
heavy hydrogen
solid silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP19626287A
Other languages
Japanese (ja)
Inventor
Yoshio Oshita
Toru Tatsumi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP19626287A priority Critical patent/JPS6441211A/en
Publication of JPS6441211A publication Critical patent/JPS6441211A/en
Pending legal-status Critical Current

Links

Landscapes

  • Chemical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)

Abstract

PURPOSE:To form an silicon film having high quality by forming silane containing an extremely little impurity from heavy hydrogen having high purity and solid silicon having high purity and discharging formed silane onto a heated substrate. CONSTITUTION:A reaction chamber 8, in which heavy hydrogen and solid silicon are reacted, and a heating apparatus 9 for the reaction chamber 8 are disposed to an silane forming device 1. A blow-off port 7 supplies the upper section of a substrate 5 with formed silane. A substrate holding section 3 holds the substrate 5 arranged while a board surface is oppositely faced in front of the blow-off port 7. Consequently, silane as a raw material gas can be formed directly from heavy hydrogen gas having high purity and solid silicon having high purity on growth. Formed silane is discharged onto the heated substrate 5. Accordingly, an silicon film having high quality is shaped.
JP19626287A 1987-08-07 1987-08-07 Semiconductor growth device Pending JPS6441211A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP19626287A JPS6441211A (en) 1987-08-07 1987-08-07 Semiconductor growth device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19626287A JPS6441211A (en) 1987-08-07 1987-08-07 Semiconductor growth device

Publications (1)

Publication Number Publication Date
JPS6441211A true JPS6441211A (en) 1989-02-13

Family

ID=16354881

Family Applications (1)

Application Number Title Priority Date Filing Date
JP19626287A Pending JPS6441211A (en) 1987-08-07 1987-08-07 Semiconductor growth device

Country Status (1)

Country Link
JP (1) JPS6441211A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6252270B1 (en) 1997-04-28 2001-06-26 Agere Systems Guardian Corp. Increased cycle specification for floating-gate and method of manufacture thereof
US6309938B1 (en) 1997-04-28 2001-10-30 Agere Systems Guardian Corp. Deuterated bipolar transistor and method of manufacture thereof
US6365511B1 (en) 1999-06-03 2002-04-02 Agere Systems Guardian Corp. Tungsten silicide nitride as a barrier for high temperature anneals to improve hot carrier reliability
US6605529B2 (en) 2001-05-11 2003-08-12 Agere Systems Inc. Method of creating hydrogen isotope reservoirs in a semiconductor device

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
SOLID-STATE ELECTRONICS=1968 *

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6252270B1 (en) 1997-04-28 2001-06-26 Agere Systems Guardian Corp. Increased cycle specification for floating-gate and method of manufacture thereof
US6309938B1 (en) 1997-04-28 2001-10-30 Agere Systems Guardian Corp. Deuterated bipolar transistor and method of manufacture thereof
US6365511B1 (en) 1999-06-03 2002-04-02 Agere Systems Guardian Corp. Tungsten silicide nitride as a barrier for high temperature anneals to improve hot carrier reliability
US6605529B2 (en) 2001-05-11 2003-08-12 Agere Systems Inc. Method of creating hydrogen isotope reservoirs in a semiconductor device

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