JPS5713738A - Vapor-phase growing apparatus - Google Patents

Vapor-phase growing apparatus

Info

Publication number
JPS5713738A
JPS5713738A JP8831780A JP8831780A JPS5713738A JP S5713738 A JPS5713738 A JP S5713738A JP 8831780 A JP8831780 A JP 8831780A JP 8831780 A JP8831780 A JP 8831780A JP S5713738 A JPS5713738 A JP S5713738A
Authority
JP
Japan
Prior art keywords
wall
film
partition wall
heater
high quality
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8831780A
Other languages
Japanese (ja)
Inventor
Shinichi Kamidate
Akira Nishimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP8831780A priority Critical patent/JPS5713738A/en
Publication of JPS5713738A publication Critical patent/JPS5713738A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)

Abstract

PURPOSE:To remove a film of high quality on a partition wall by etching without exfoliation by providing the partition wall and a heater for heating the wall along the inner wall of a reaction chamber in a vapor-phase growing apparatus, thereby preventing the film being adhered onto the inner wall and forming the film of high quality on the partition wall. CONSTITUTION:A partition wall 12 and a heater 13 for heating the wall are provided along each of side walls of a reaction chamber, and since the partition wall 12 is heated to high temperature by the heater 13, a narrow space is formed to protect an O-ring 3 so that they are not contact directly with a bottom plate 1b. Monosilane and ammonia gas are introduced into the chamber, high frequency voltage is applied between upper and lower electrodes 4 and 5 to form gas plasma. When a wafer 7 is heated by a heating element 9, a nitrided silicon film is formed on the surface of the wafer by chemical reaction. Since the film is not thus formed on the inner wall and the film of high quality is formed by the heater on the partition wall, plasma etching can be performed.
JP8831780A 1980-06-27 1980-06-27 Vapor-phase growing apparatus Pending JPS5713738A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8831780A JPS5713738A (en) 1980-06-27 1980-06-27 Vapor-phase growing apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8831780A JPS5713738A (en) 1980-06-27 1980-06-27 Vapor-phase growing apparatus

Publications (1)

Publication Number Publication Date
JPS5713738A true JPS5713738A (en) 1982-01-23

Family

ID=13939544

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8831780A Pending JPS5713738A (en) 1980-06-27 1980-06-27 Vapor-phase growing apparatus

Country Status (1)

Country Link
JP (1) JPS5713738A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60729A (en) * 1983-06-17 1985-01-05 Fujitsu Ltd Resistance heating device
JPS62147340U (en) * 1987-02-10 1987-09-17
US5798016A (en) * 1994-03-08 1998-08-25 International Business Machines Corporation Apparatus for hot wall reactive ion etching using a dielectric or metallic liner with temperature control to achieve process stability
US6497118B1 (en) 2000-09-19 2002-12-24 Corning Incorporated Method and apparatus for reducing refractory contamination in fused silica processes

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60729A (en) * 1983-06-17 1985-01-05 Fujitsu Ltd Resistance heating device
JPS62147340U (en) * 1987-02-10 1987-09-17
US5798016A (en) * 1994-03-08 1998-08-25 International Business Machines Corporation Apparatus for hot wall reactive ion etching using a dielectric or metallic liner with temperature control to achieve process stability
US6497118B1 (en) 2000-09-19 2002-12-24 Corning Incorporated Method and apparatus for reducing refractory contamination in fused silica processes

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