JPS5773175A - Chemical vapor deposition device - Google Patents

Chemical vapor deposition device

Info

Publication number
JPS5773175A
JPS5773175A JP14916080A JP14916080A JPS5773175A JP S5773175 A JPS5773175 A JP S5773175A JP 14916080 A JP14916080 A JP 14916080A JP 14916080 A JP14916080 A JP 14916080A JP S5773175 A JPS5773175 A JP S5773175A
Authority
JP
Japan
Prior art keywords
vessel
prescribed
high frequency
voltage
pressure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14916080A
Other languages
Japanese (ja)
Inventor
Yasuyuki Yamada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kobe Steel Ltd
Original Assignee
Kobe Steel Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kobe Steel Ltd filed Critical Kobe Steel Ltd
Priority to JP14916080A priority Critical patent/JPS5773175A/en
Publication of JPS5773175A publication Critical patent/JPS5773175A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/517—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using a combination of discharges covered by two or more of groups C23C16/503 - C23C16/515

Abstract

PURPOSE:To obtain a homogeneous film of superior showing power characteristics with an intricate shape and large size by providing a supporting table of a material to be treated of negative potential a heating element for heating said material and a high frequency induction coil within a vacuum vessel of a plasma CVD device. CONSTITUTION:In the case of forming, for example, a silicon nitride film, a material to be treated 15 is mounted on a support table 16, and the inside of a vacuum chamber 10 is evacuated to prescribed pressure. At this time, a heating element 14 is operated simultaneously to heat said material to prescribed temps. Thence, an inert gaseous atmosphere is introduced into the vessel 10 to develop prescribed gaseous pressure in the vessel. Next, high frequency AC voltage is applied to a high frequency induction coil 20, and DC voltage is applied to the table 16 to ionize and accelerate said gas, whereby the ion bombarding of the surface of said material is accomplished. Thereafter, the power supply to the rest except for the element 14 is interrupted and the inside of the vessel is evacuated to prescribed pressure. Thence, gases of suitable ratios of SiH4 and N2 are introduced into the vessel to prescribed pressure, and voltage is applied to the coil 20 and the table 16, whereby the silicon nitrode film is formed.
JP14916080A 1980-10-23 1980-10-23 Chemical vapor deposition device Pending JPS5773175A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14916080A JPS5773175A (en) 1980-10-23 1980-10-23 Chemical vapor deposition device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14916080A JPS5773175A (en) 1980-10-23 1980-10-23 Chemical vapor deposition device

Publications (1)

Publication Number Publication Date
JPS5773175A true JPS5773175A (en) 1982-05-07

Family

ID=15469095

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14916080A Pending JPS5773175A (en) 1980-10-23 1980-10-23 Chemical vapor deposition device

Country Status (1)

Country Link
JP (1) JPS5773175A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0087151A2 (en) * 1982-02-23 1983-08-31 Siemens Aktiengesellschaft Process for producing layers of refractory metals or metallic compounds by chemical vapour deposition
JP2012152732A (en) * 2011-01-26 2012-08-16 秉豊 ▲頼▼ Plasma reaction method and plasma reaction device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53144891A (en) * 1977-05-25 1978-12-16 Nippon Telegr & Teleph Corp <Ntt> Method and apparatus for production of inorganic compound

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53144891A (en) * 1977-05-25 1978-12-16 Nippon Telegr & Teleph Corp <Ntt> Method and apparatus for production of inorganic compound

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0087151A2 (en) * 1982-02-23 1983-08-31 Siemens Aktiengesellschaft Process for producing layers of refractory metals or metallic compounds by chemical vapour deposition
EP0087151A3 (en) * 1982-02-23 1984-07-25 Siemens Aktiengesellschaft Process for producing layers of refractory metals or metallic compounds by chemical vapour deposition
JP2012152732A (en) * 2011-01-26 2012-08-16 秉豊 ▲頼▼ Plasma reaction method and plasma reaction device

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