JPS56130465A - Film forming method - Google Patents

Film forming method

Info

Publication number
JPS56130465A
JPS56130465A JP3251780A JP3251780A JPS56130465A JP S56130465 A JPS56130465 A JP S56130465A JP 3251780 A JP3251780 A JP 3251780A JP 3251780 A JP3251780 A JP 3251780A JP S56130465 A JPS56130465 A JP S56130465A
Authority
JP
Japan
Prior art keywords
support
film
gas
chamber
electrodes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3251780A
Other languages
Japanese (ja)
Other versions
JPS6315348B2 (en
Inventor
Nobuo Kitajima
Tadaharu Fukuda
Yuji Nishigaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP3251780A priority Critical patent/JPS56130465A/en
Publication of JPS56130465A publication Critical patent/JPS56130465A/en
Publication of JPS6315348B2 publication Critical patent/JPS6315348B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/517—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using a combination of discharges covered by two or more of groups C23C16/503 - C23C16/515

Abstract

PURPOSE:To obtain a film having uniform characteristics over a large area with high efficiency by forming a deposited film on a support in the plasma atmosphere of a gas formed in the presence of a DC electric field and an alternating electric field. CONSTITUTION:Deposition chamber 101 is evacuated 102 to a predetermined vacuum degree, and support 109 is heated to a predetermined temp. A desired gas is introduced into chamber 101 from desired gas cylinder 105. When chamber 101 is adjusted to a desired vacuum degree, by applying a voltage to electrodes 107 from DC power source 108 and supplying alternating power to RF coil 110 from RF power source 111, glow discharge is generated between electrodes 107-1, 107-2 to form the plasma atmosphere of the gas for forming a deposited film. Thus, an amorphous-Si:H film or the like with superior electric and photoelectric properties is easily formed on support 109 with high reproducibility at a high speed. Electric energy required to form the alternating current is 50-2kW in case of an inductive method, and favorable frequency is 13.56MHz.
JP3251780A 1980-03-14 1980-03-14 Film forming method Granted JPS56130465A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3251780A JPS56130465A (en) 1980-03-14 1980-03-14 Film forming method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3251780A JPS56130465A (en) 1980-03-14 1980-03-14 Film forming method

Publications (2)

Publication Number Publication Date
JPS56130465A true JPS56130465A (en) 1981-10-13
JPS6315348B2 JPS6315348B2 (en) 1988-04-04

Family

ID=12361153

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3251780A Granted JPS56130465A (en) 1980-03-14 1980-03-14 Film forming method

Country Status (1)

Country Link
JP (1) JPS56130465A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS571231A (en) * 1980-06-04 1982-01-06 Res Dev Corp Of Japan Plasma chemical vapour deposition (cvd) device
JPS58118111A (en) * 1982-01-07 1983-07-14 Ulvac Corp Plasma cvd apparatus
JPS5997514A (en) * 1982-11-22 1984-06-05 Agency Of Ind Science & Technol Manufacture of amorphous silicon film
JPS6167923A (en) * 1984-09-12 1986-04-08 Fujitsu Ltd Plasma chemical vapor-phase growth

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5368171A (en) * 1976-11-30 1978-06-17 Hitachi Ltd Method and apparatus for plasma treatment
JPS5486341A (en) * 1977-12-22 1979-07-09 Canon Inc Electrophotographic photoreceptor
JPS5521515A (en) * 1978-07-31 1980-02-15 Oyo Kagaku Kenkyusho Surface treatment

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5368171A (en) * 1976-11-30 1978-06-17 Hitachi Ltd Method and apparatus for plasma treatment
JPS5486341A (en) * 1977-12-22 1979-07-09 Canon Inc Electrophotographic photoreceptor
JPS5521515A (en) * 1978-07-31 1980-02-15 Oyo Kagaku Kenkyusho Surface treatment

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS571231A (en) * 1980-06-04 1982-01-06 Res Dev Corp Of Japan Plasma chemical vapour deposition (cvd) device
JPH0133935B2 (en) * 1980-06-04 1989-07-17 Shingijutsu Kaihatsu Jigyodan
JPS58118111A (en) * 1982-01-07 1983-07-14 Ulvac Corp Plasma cvd apparatus
JPH0472378B2 (en) * 1982-01-07 1992-11-18 Nippon Shinku Gijutsu Kk
JPS5997514A (en) * 1982-11-22 1984-06-05 Agency Of Ind Science & Technol Manufacture of amorphous silicon film
JPH0445991B2 (en) * 1982-11-22 1992-07-28 Kogyo Gijutsu Incho
JPS6167923A (en) * 1984-09-12 1986-04-08 Fujitsu Ltd Plasma chemical vapor-phase growth
JPH0520899B2 (en) * 1984-09-12 1993-03-22 Fujitsu Ltd

Also Published As

Publication number Publication date
JPS6315348B2 (en) 1988-04-04

Similar Documents

Publication Publication Date Title
US5015493A (en) Process and apparatus for coating conducting pieces using a pulsed glow discharge
US4342631A (en) Gasless ion plating process and apparatus
US6165376A (en) Work surface treatment method and work surface treatment apparatus
US4844775A (en) Ion etching and chemical vapour deposition
JP3737786B2 (en) Etching or coating equipment
DE50015635D1 (en) Bstraten
KR970021370A (en) Plasma CVD Apparatus and Method and Dry Etching Apparatus and Method
GB1356769A (en) Apparatus and method for depositing thin layers on a substrate
US20020047539A1 (en) Process and switching arrangement for pulsing energy introduction into magnetron discharges
CN109943801B (en) Gas arc discharge device, coupling system with vacuum cavity and ion nitriding process
KR860000703A (en) Apparatus and method for depositing a film on a substrate by glow discharge decomposition
JPS5633839A (en) Plasma treatment and device therefor
US3525680A (en) Method and apparatus for the radio frequency sputtering of dielectric materials
JPS56130465A (en) Film forming method
JPS56130466A (en) Film forming method
JPS5681678A (en) Method and apparatus for plasma etching
JPS5558371A (en) Sputtering apparatus
JPS57129678A (en) High-frequency thawer
JPS56121629A (en) Film forming method
JPS5773175A (en) Chemical vapor deposition device
JPS6122026B2 (en)
JPS63243277A (en) Plasma film forming device
IT1124390B (en) Carburising metal surfaces
JPS573830A (en) Vacuum metallizing method
RU2037559C1 (en) Method and apparatus to deposit coatings on pieces by ionic dispersion method