JPH0445991B2 - - Google Patents
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- Publication number
- JPH0445991B2 JPH0445991B2 JP57204923A JP20492382A JPH0445991B2 JP H0445991 B2 JPH0445991 B2 JP H0445991B2 JP 57204923 A JP57204923 A JP 57204923A JP 20492382 A JP20492382 A JP 20492382A JP H0445991 B2 JPH0445991 B2 JP H0445991B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- type
- energy gap
- optical energy
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 63
- 230000003287 optical effect Effects 0.000 claims description 22
- 239000000758 substrate Substances 0.000 claims description 17
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 238000005268 plasma chemical vapour deposition Methods 0.000 claims description 3
- 238000000034 method Methods 0.000 claims description 2
- 239000007789 gas Substances 0.000 description 12
- 238000006243 chemical reaction Methods 0.000 description 10
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical group [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 8
- 229910000077 silane Inorganic materials 0.000 description 8
- 239000001257 hydrogen Substances 0.000 description 6
- 229910052739 hydrogen Inorganic materials 0.000 description 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 5
- 239000011521 glass Substances 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 2
- 229910006404 SnO 2 Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
Description
【発明の詳細な説明】
(イ) 技術分野
本発明は、アモルフアスシリコン（以下ａ−Si
と記す）膜の製造法に関する。[Detailed description of the invention] (a) Technical field The present invention relates to amorphous silicon (hereinafter referred to as a-Si).
related to the manufacturing method of the membrane.
(ロ) 背景技術
従来、ａ−Si膜はシラン（SiH4）ガスをグロ
ー放電分解する、いわゆるプラズマCVD法、あ
るいはシリコン（Si）ターゲツトを水素を含むア
ルゴン（Ar）ガスでスパツタする方法で製造さ
れており、ａ−Si膜を用いた光起電力素子は、光
電変換効率が８％を越えるものが製造されてい
た。(b) Background technology Traditionally, a-Si films have been produced by glow discharge decomposition of silane (SiH 4 ) gas, the so-called plasma CVD method, or by sputtering a silicon (Si) target with argon (Ar) gas containing hydrogen. Photovoltaic devices using a-Si films have been manufactured with photoelectric conversion efficiencies exceeding 8%.
しかしながら、ｉ型ａ−Si膜は光電変換を司る
重要な活性層であるが、良好な光電変換効率を得
る光起電力素子に用いるｉ型ａ−Si膜の光学的エ
ネルギーギヤツプがほぼ1.75eVと一定であるた
めに、長波長光は、エネルギーが小さくａ−Si膜
内で吸収されずに透過してしまう。また、短波長
光は、ａ−Si膜内で吸収されるが、光の持つエネ
ルギーが大きすぎるため、ａ−Si膜の光学的エネ
ルギーギヤツプ以上の過剰エネレギーはすべてエ
ネレギーロスとなるという欠点があつた。また従
来、前記の欠点を解消せんと、ａ−Si膜に炭素を
添加したいわゆるａ−SiC膜を用い光学的エネル
ギーギヤツプを大きくして短波長光を有効に利用
する試みや、ａ−Si膜にゲルマニウム（Ge）を
添加したいわゆるａ−Si膜を用い、光学的エネル
ギーギヤツプを小さくして長波長光を有効に利用
する試みがなされていた。 However, although the i-type a-Si film is an important active layer that controls photoelectric conversion, the optical energy gap of the i-type a-Si film used in photovoltaic devices to obtain good photoelectric conversion efficiency is approximately 1.75. Since the energy is constant at eV, long wavelength light has small energy and is transmitted through the a-Si film without being absorbed. In addition, short wavelength light is absorbed within the a-Si film, but since the energy of the light is too large, any excess energy exceeding the optical energy gap of the a-Si film results in energy loss. It was hot. In order to overcome the above-mentioned drawbacks, attempts have been made to increase the optical energy gap by using a so-called a-SiC film in which carbon is added to the a-Si film to effectively utilize short wavelength light. Attempts have been made to reduce the optical energy gap and effectively utilize long wavelength light by using a so-called a-Si film in which germanium (Ge) is added to a Si film.
しかしながら、これらのａ−SiC膜や、ａ−
SiGe膜は、添加に伴ない、光電気伝導部が大き
く低下するため、光学的エネルギーギヤツプの拡
大あるいは縮小の効果が、光電変換効率に大きく
寄与していないという問題点があつた。 However, these a-SiC films and a-
In the SiGe film, as the photoelectric conduction area is greatly reduced as the SiGe film is added, there is a problem in that the effect of expanding or reducing the optical energy gap does not significantly contribute to the photoelectric conversion efficiency.
(ハ) 発明の開示
そこで、本発明者は、前記問題点を解消すべく
種々検討を行なつた結果、基板にｐ−ｉ−ｎ構造
のアモルフアスシリコン膜のRFプラズマCVD法
で形成し、太陽電地を製造する方法において、ｉ
型アモルフアスシリコン膜形成時に前記基板に直
流電流を印加することにより、光学的エネルギー
ギヤツプを制御できることを見出した。(C) Disclosure of the Invention Therefore, the present inventor conducted various studies to solve the above problems, and as a result, formed an amorphous silicon film with a pin structure on a substrate by RF plasma CVD method, In the method of manufacturing a solar cell, i
It has been found that the optical energy gap can be controlled by applying a direct current to the substrate during the formation of the amorphous silicon film.
本発明の目的は、光電気伝導度を低下すること
なく、光学的エネルギーギヤツプが自在に制御さ
れたｉ型ａ−Si膜を利用することにより、高効率
なｐ−ｉ−ｎ構造のアモルフアス太陽電池の製造
方法を提供することにある。 The purpose of the present invention is to create a highly efficient pin structure by using an i-type a-Si film in which the optical energy gap is freely controlled without reducing photoelectric conductivity. An object of the present invention is to provide a method for manufacturing an amorphous solar cell.
以下、本発明をいくつかの実施例に基づき詳細
に説明する。 Hereinafter, the present invention will be explained in detail based on some examples.
実施例 １
第１図に本発明によるａ−Si膜の光学的エネル
ギーギヤツプと基板の導電部に印加した直流電圧
との関係を示す。基板はガラス板に厚さ約3000Å
の酸化スズ（SnO2）からなる透明導電膜を形成
したものを用い、ａ−Si膜の形成条件は、水素希
釈シランガス濃度10％、シランガス圧力1Torr、
シランガス流量50SCCM、高周波（RF）電力
500W、基板温度250℃、膜形成時間１時間で一定
とした。ａ−Si膜形成時に前記基板の導電部に、
−300V、−200V、−100V、0V、100V、200V、
300Vの直流電圧を印加し、形成した膜の光学的
エネルギーギヤツプをそれぞれ測定した。第１図
からわかるように、基板の導電部に直流電圧を印
加することにより、光学的エネルギーギヤツプを
変化させることができ、正電圧で光学的エネルギ
ーギヤツプを小さくまたは負電圧で光学的エネル
ギーギヤツプを大きくすることができる。光学的
エネルギーギヤツプが変化する理由は、現段階で
は明らかではないが、およそ次のように考えられ
る。基板に負の直流バイアス電圧を印加すること
によりプラズマが基板から遠ざけられ、水素関連
イオン（H2 +、H+、SiH+等）が中性ラジカルと
ともに膜成長に寄与するため膜中の水素量が増加
する。また、基板に正の直流バイアス電圧を印加
することにより、電子が基板に引きつけられ、膜
が一種のボンバードメントによるアニール効果を
受けるため、膜中の水素量が減少する。この膜中
の水素量の増減により、光学的エネルギーギヤツ
プが変化するものと考えられる。印加する直流電
圧が−300Vから＋300Vの範囲では、光学的エネ
ルギーギヤツプは1.70eVから1.85eVまで変化す
ることができた。また、光電気伝導度は、いずれ
の直流電圧を印加した場合でも１×10-4（Ω・cm）
-1とほぼ一定であり、光電変換層として優れた膜
であつた。Example 1 FIG. 1 shows the relationship between the optical energy gap of the a-Si film according to the present invention and the DC voltage applied to the conductive portion of the substrate. The substrate is a glass plate with a thickness of approximately 3000Å.
A transparent conductive film made of tin oxide (SnO 2 ) was formed, and the conditions for forming the a-Si film were: hydrogen diluted silane gas concentration 10%, silane gas pressure 1 Torr,
Silane gas flow rate 50SCCM, radio frequency (RF) power
The power was kept at 500W, the substrate temperature was 250°C, and the film formation time was 1 hour. When forming the a-Si film, on the conductive part of the substrate,
-300V, -200V, -100V, 0V, 100V, 200V,
A DC voltage of 300 V was applied, and the optical energy gap of each of the formed films was measured. As can be seen from Fig. 1, the optical energy gap can be changed by applying a DC voltage to the conductive part of the substrate. The target energy gap can be increased. The reason why the optical energy gap changes is not clear at this stage, but it is thought to be approximately as follows. By applying a negative DC bias voltage to the substrate, the plasma is moved away from the substrate, and hydrogen-related ions (H 2 + , H + , SiH +, etc.) contribute to film growth together with neutral radicals, which reduces the amount of hydrogen in the film. increases. Furthermore, by applying a positive DC bias voltage to the substrate, electrons are attracted to the substrate and the film undergoes an annealing effect due to a type of bombardment, thereby reducing the amount of hydrogen in the film. It is thought that the optical energy gap changes as the amount of hydrogen in the film increases or decreases. When the applied DC voltage ranged from -300V to +300V, the optical energy gap could vary from 1.70eV to 1.85eV. In addition, the photoelectric conductivity is 1×10 -4 (Ω・cm) when any DC voltage is applied.
The value was almost constant at -1 , indicating that the film was excellent as a photoelectric conversion layer.
なお、絶縁性のガラス基板上にも種々直流電圧
を印加してａ−Si膜を前記と同じ条件で形成した
が、光学的エネルギーギヤツプは、いずれのａ−
Si膜も1.75eVと変化はなかつた。 Note that a-Si films were also formed on an insulating glass substrate under the same conditions as above by applying various DC voltages, but the optical energy gap was
The Si film also remained unchanged at 1.75 eV.
実施例 ２
第２図は、本発明によるａ−Si膜を用いた光起
電子素子の一構造図である。SnO2からなる透明
導電膜２を形成したガラス板１にホウ素をSiH4
に対するB2H6の流量比で１×10-3ドープしたｐ
型ａ−Si膜３を形成した後、ドープしないｉ型ａ
−Si膜４、さらにリンをSiH4に対するPH3の流
量比で１×10-3ドープしたｎ型ａ−Si膜５、最後
にアルミ電極６を形成した。ｉ型ａ−Si膜４は、
３分割し、ｐ型ａ−Si膜３側から膜形成時に−
300Vの直流電圧を印加したｉ型ａ−Si膜７、0V
の直流電流を印加したｉ型ａ−Si膜８、＋300Vの
直流電圧を印加したｉ型ａ−Si膜９の３種類の膜
で構成し、ｐ型ａ−Si膜３側（光入射側）のｉ型
ａ−Si膜７の光学的エネルギーギヤツプを大き
く、またｎ型ａ−Si膜５側のｉ型ａ−Si膜９の光
学的エネルギーギヤツプを小さくした。なお、シ
ランガス濃度、ガス圧力、シランガス流量、高周
波電力、基板温度はｐ型ａ−Si膜３、ｉ型ａ−Si
膜４、ｎ型ａ−Si膜５、すべて実施例１と同じで
ある。直流電圧を印加しなかつた光起電力素子の
光電変換効率が6.8％であつたのに対し、本実施
例による光起電力素子は、その光電変換層である
ｉ型ａ−Si膜の光学的エネルギーギヤツプを調整
したため、その光電変換効率は7.4％であつた。
なお、本実施例では、ｉ型ａ−Si膜形成時に−
300V、0V、＋300Vと離散的に直流電圧を変化さ
せたが、−300Vから＋300Vまで連続的に変化さ
せて良いことは言うまでもない。Example 2 FIG. 2 is a structural diagram of a photovoltaic device using an a-Si film according to the present invention. Boron is added to SiH 4 on the glass plate 1 on which the transparent conductive film 2 made of SnO 2 is formed.
1×10 -3 doped p with a flow ratio of B 2 H 6 to
After forming type a-Si film 3, undoped i-type a
A -Si film 4, an n-type a-Si film 5 doped with phosphorus at a flow rate ratio of PH 3 to SiH 4 of 1×10 −3 , and finally an aluminum electrode 6 were formed. The i-type a-Si film 4 is
Divide into three parts, and when forming the film from the p-type a-Si film 3 side -
i-type a-Si film 7 with 300V DC voltage applied, 0V
It is composed of three types of films: an i-type a-Si film 8 to which a DC current of +300V is applied, and an i-type a-Si film 9 to which a DC voltage of +300V is applied, and the p-type a-Si film 3 side (light incident side) The optical energy gap of the i-type a-Si film 7 on the side of the n-type a-Si film 5 was made large, and the optical energy gap of the i-type a-Si film 9 on the n-type a-Si film 5 side was made small. Note that the silane gas concentration, gas pressure, silane gas flow rate, high frequency power, and substrate temperature are p-type a-Si film 3 and i-type a-Si film 3.
The film 4 and the n-type a-Si film 5 are all the same as in Example 1. While the photovoltaic device to which no DC voltage was applied had a photoelectric conversion efficiency of 6.8%, the photovoltaic device according to this example had an optical After adjusting the energy gap, the photoelectric conversion efficiency was 7.4%.
In this example, when forming an i-type a-Si film, -
Although the DC voltage was changed discretely from 300V to 0V to +300V, it goes without saying that it may be changed continuously from -300V to +300V.
実施例 ３
第３図は、本発明によるａ−Si膜を用いた光起
電力素子の一構成図である。SnO2からなる透明
導電膜１１を形成したガラス板１０に、ｐ型ａ−
Si膜１２、ｉ型ａ−Si膜１３、ｎ型ａ−Si膜１
４、ｐ型ａ−Si膜１５、ｉ型ａ−Si膜１６、ｎ型
ａ−Si膜１７、アルミ電極１８の順に形成した。
ｐ型ａ−Si膜１２および１５のホウ素のドープ
量、ｎ型ａ−Si膜１４および１７のリンのドープ
量はいずれもガスの量流比で１×10-3である。ま
たｉ型ａ−Si膜１３および１６は、膜形成時にそ
れぞれ−300V、＋300Vの直流電流を印加し、光
学的エネルギーギヤツプを各々大きくおよび小さ
くした。Example 3 FIG. 3 is a block diagram of a photovoltaic device using an a-Si film according to the present invention. A p-type a-
Si film 12, i-type a-Si film 13, n-type a-Si film 1
4. A p-type a-Si film 15, an i-type a-Si film 16, an n-type a-Si film 17, and an aluminum electrode 18 were formed in this order.
The amount of boron doped in the p-type a-Si films 12 and 15 and the amount of phosphorus doped in the n-type a-Si films 14 and 17 are both 1×10 −3 in gas flow ratio. Further, when forming the i-type a-Si films 13 and 16, DC currents of -300 V and +300 V were applied, respectively, to increase and decrease the optical energy gap, respectively.
なお、シランガス濃度、ガス圧力、シランガス
流量、高周波電力、基板温度はすべてのａ−Si膜
とともに実施例１と同じである。実施例３と同構
造で直流電圧を印加しなかつた場合、および本実
施例の場合、それぞれ光起電力素子の光電変換効
率は6.9％および7.8％であつた。 Note that the silane gas concentration, gas pressure, silane gas flow rate, high frequency power, and substrate temperature are the same as in Example 1 as well as all a-Si films. In the case of the same structure as in Example 3 but no DC voltage was applied, and in the case of this example, the photoelectric conversion efficiency of the photovoltaic element was 6.9% and 7.8%, respectively.
本実施例の場合、光電変換層であるｉ型ａ−Si
膜の膜質を低下させることなく、その光学的エネ
ルギーギヤツプを調整できるので高い光電変換効
率が得られる。 In the case of this example, the i-type a-Si which is the photoelectric conversion layer
Since the optical energy gap can be adjusted without reducing the film quality of the film, high photoelectric conversion efficiency can be obtained.
以上詳細に説明したように、本発明により、光
電気伝導度を低下することなく光学的エネルギー
ギヤツプを自在に制御されたｉ型ａ−Si膜を得る
ことができ、高効率な太陽電池を製造することが
できる。 As explained in detail above, according to the present invention, it is possible to obtain an i-type a-Si film in which the optical energy gap is freely controlled without reducing the photoelectric conductivity, and it is possible to obtain a highly efficient solar cell. can be manufactured.
第１図は本発明によるａ−Si膜の光学的エネル
ギーギヤツプと基板の導電部に印加した直流電圧
との関係を示す図であり、第２図は本発明による
ａ−Si膜を用いた光起電力素子の一構造図であ
り、第３図は本発明によるａ−Si膜を用いた光起
電力素子の一構成図である。
１……ガラス板、２……透明導電膜、３……ｐ
型ａ−Si膜、４……ｉ型ａ−Si膜、５……ｎ型ａ
−Si膜、６……アルミ電極、７……ｉ型ａ−Si
膜、８……ｉ型ａ−Si膜、９……ｉ型ａ−Si膜、
１０……ガラス板、１１……透明導電膜、１２…
…ｐ型ａ−Si膜、１３……ｉ型ａ−Si膜、１４…
…ｎ型ａ−Si膜、１５……ｐ型ａ−Si膜、１６…
…ｉ型ａ−Si膜、１７……ｎ型ａ−Si膜、１８…
…アルミ電極。
FIG. 1 is a diagram showing the relationship between the optical energy gap of the a-Si film according to the present invention and the DC voltage applied to the conductive part of the substrate, and FIG. FIG. 3 is a structural diagram of a photovoltaic device using an a-Si film according to the present invention. 1...Glass plate, 2...Transparent conductive film, 3...p
Type a-Si film, 4...i type a-Si film, 5...n type a
-Si film, 6...aluminum electrode, 7...i-type a-Si
film, 8... i-type a-Si film, 9... i-type a-Si film,
10...Glass plate, 11...Transparent conductive film, 12...
...p-type a-Si film, 13...i-type a-Si film, 14...
...n-type a-Si film, 15...p-type a-Si film, 16...
...i-type a-Si film, 17...n-type a-Si film, 18...
...Aluminum electrode.
Claims (1)
ン膜をRFプラズマCVD法で形成し、太陽電池を
製造する方法において、ｉ型アモルフアスシリコ
ン膜形成時に、前記基板に直流バイアス電圧を印
加して該電圧を変化させることにより、前記ｉ型
アモルフアスシリコン膜の光学的エネルギーギヤ
ツプを光の入射側から次第に小さくなるように制
御することを特徴とする太陽電池の製造法。1. In a method of manufacturing a solar cell by forming an amorphous silicon film with a p-i-n structure on a substrate by RF plasma CVD method, a DC bias voltage is applied to the substrate when forming an i-type amorphous silicon film. A method for manufacturing a solar cell, characterized in that the optical energy gap of the i-type amorphous silicon film is controlled to gradually become smaller from the light incident side by changing the voltage.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57204923A JPS5997514A (en) | 1982-11-22 | 1982-11-22 | Manufacture of amorphous silicon film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57204923A JPS5997514A (en) | 1982-11-22 | 1982-11-22 | Manufacture of amorphous silicon film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5997514A JPS5997514A (en) | 1984-06-05 |
| JPH0445991B2 true JPH0445991B2 (en) | 1992-07-28 |
Family
ID=16498601
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57204923A Granted JPS5997514A (en) | 1982-11-22 | 1982-11-22 | Manufacture of amorphous silicon film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5997514A (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4547621A (en) * | 1984-06-25 | 1985-10-15 | Sovonics Solar Systems | Stable photovoltaic devices and method of producing same |
| JPH0195770U (en) * | 1987-12-17 | 1989-06-26 | ||
| JPH02122575A (en) * | 1988-10-31 | 1990-05-10 | Kyocera Corp | Photoelectric conversion device |
| JP2008115460A (en) | 2006-10-12 | 2008-05-22 | Canon Inc | Method for forming semiconductor device and method for forming photovoltaic device |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56130466A (en) * | 1980-03-17 | 1981-10-13 | Canon Inc | Film forming method |
| JPS56130465A (en) * | 1980-03-14 | 1981-10-13 | Canon Inc | Film forming method |
| JPS58144470A (en) * | 1981-12-16 | 1983-08-27 | エナ−ジ−・コンバ−シヨン・デバイセス・インコ−ポレ−テツド | Chemical phase deposition manufacture for light responsive amorphous alloy |
| JPS5855328B2 (en) * | 1978-09-20 | 1983-12-09 | 日野自動車株式会社 | diesel engine piston |
| JPS5913617A (en) * | 1982-07-16 | 1984-01-24 | Agency Of Ind Science & Technol | Manufacture of thin silicon film containing microcrystalline silicon |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5855328U (en) * | 1981-10-09 | 1983-04-14 | 三洋電機株式会社 | switching device |
-
1982
- 1982-11-22 JP JP57204923A patent/JPS5997514A/en active Granted
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5855328B2 (en) * | 1978-09-20 | 1983-12-09 | 日野自動車株式会社 | diesel engine piston |
| JPS56130465A (en) * | 1980-03-14 | 1981-10-13 | Canon Inc | Film forming method |
| JPS56130466A (en) * | 1980-03-17 | 1981-10-13 | Canon Inc | Film forming method |
| JPS58144470A (en) * | 1981-12-16 | 1983-08-27 | エナ−ジ−・コンバ−シヨン・デバイセス・インコ−ポレ−テツド | Chemical phase deposition manufacture for light responsive amorphous alloy |
| JPS5913617A (en) * | 1982-07-16 | 1984-01-24 | Agency Of Ind Science & Technol | Manufacture of thin silicon film containing microcrystalline silicon |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5997514A (en) | 1984-06-05 |
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