JPS571231A - Plasma chemical vapour deposition (cvd) device - Google Patents

Plasma chemical vapour deposition (cvd) device

Info

Publication number
JPS571231A
JPS571231A JP7438880A JP7438880A JPS571231A JP S571231 A JPS571231 A JP S571231A JP 7438880 A JP7438880 A JP 7438880A JP 7438880 A JP7438880 A JP 7438880A JP S571231 A JPS571231 A JP S571231A
Authority
JP
Japan
Prior art keywords
vessel
plasma
high frequency
coil
cvd
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7438880A
Other languages
Japanese (ja)
Other versions
JPH0133935B2 (en
Inventor
Yoichi Murayama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Japan Science and Technology Agency
Shingijutsu Kaihatsu Jigyodan
Original Assignee
Research Development Corp of Japan
Shingijutsu Kaihatsu Jigyodan
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Research Development Corp of Japan, Shingijutsu Kaihatsu Jigyodan filed Critical Research Development Corp of Japan
Priority to JP7438880A priority Critical patent/JPS571231A/en
Publication of JPS571231A publication Critical patent/JPS571231A/en
Publication of JPH0133935B2 publication Critical patent/JPH0133935B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Metallurgy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Organic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)

Abstract

PURPOSE:To enable to perform a stabilized formation of a CVD film without inflicting an adverse effect caused by attachments by a method wherein a high frequency coil is provided in the vacuum vessel of the device and a reaction gas plasma is formed by applying a high frequency power on the coil. CONSTITUTION:The high frequency coil 5 consisting of stainless steel, for example, is provided in the vacuum vessel 1 having a vacuum evacuating port 2 and a gas feeding port 14. A substrate 3 is placed in the vessel 1, SiH4 gas, for example, is induced in the vessel 1 from the feeding port 4, plasma is formed by applying a high frequency power on the coil 5 and an Si is deposited on the substrate 3. Through these procedures, plasma can be formed in a stabilized condition even when a conductive reaction product is attached on the inner wall of the vessel 1, thereby enabling to improve the controllability, workability and productivity of the film formation. Also, as the vessel 1 can be made of stainless steel and the like, the film consisting of an evaporating material can be formed by plasma by providing a source of evaporation 6 in the vessel 1.
JP7438880A 1980-06-04 1980-06-04 Plasma chemical vapour deposition (cvd) device Granted JPS571231A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7438880A JPS571231A (en) 1980-06-04 1980-06-04 Plasma chemical vapour deposition (cvd) device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7438880A JPS571231A (en) 1980-06-04 1980-06-04 Plasma chemical vapour deposition (cvd) device

Publications (2)

Publication Number Publication Date
JPS571231A true JPS571231A (en) 1982-01-06
JPH0133935B2 JPH0133935B2 (en) 1989-07-17

Family

ID=13545739

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7438880A Granted JPS571231A (en) 1980-06-04 1980-06-04 Plasma chemical vapour deposition (cvd) device

Country Status (1)

Country Link
JP (1) JPS571231A (en)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5022780A (en) * 1973-07-03 1975-03-11
JPS5391663A (en) * 1977-01-24 1978-08-11 Hitachi Ltd Plasma cvd device
JPS56130465A (en) * 1980-03-14 1981-10-13 Canon Inc Film forming method

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5022780A (en) * 1973-07-03 1975-03-11
JPS5391663A (en) * 1977-01-24 1978-08-11 Hitachi Ltd Plasma cvd device
JPS56130465A (en) * 1980-03-14 1981-10-13 Canon Inc Film forming method

Also Published As

Publication number Publication date
JPH0133935B2 (en) 1989-07-17

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