JPS56116869A - Inductive reduced pressure gaseous phase method - Google Patents

Inductive reduced pressure gaseous phase method

Info

Publication number
JPS56116869A
JPS56116869A JP1878980A JP1878980A JPS56116869A JP S56116869 A JPS56116869 A JP S56116869A JP 1878980 A JP1878980 A JP 1878980A JP 1878980 A JP1878980 A JP 1878980A JP S56116869 A JPS56116869 A JP S56116869A
Authority
JP
Japan
Prior art keywords
gas
reactor
substrate
ammonia
inductive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1878980A
Other languages
Japanese (ja)
Inventor
Shunpei Yamazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to JP1878980A priority Critical patent/JPS56116869A/en
Publication of JPS56116869A publication Critical patent/JPS56116869A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
    • C23C8/06—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases
    • C23C8/36—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases using ionised gases, e.g. ionitriding
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/511—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using microwave discharges

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Vapour Deposition (AREA)
  • Superconductor Devices And Manufacturing Methods Thereof (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE:To form thin nitride film on the surface of a substrate by introducing a gas such as ammonia with a carrier gas such as He, Ne, etc., into a vacuum container into which a substrate is placed and then applying an inductive energy of a specific frequency to the container. CONSTITUTION:A substrate 1, e.g., of a semiconductor such as Si, Ge, etc., a conductor such as stainless steel, etc., or an insulator such as alumina, etc., is attached to a quartz boat 2 and then placed in a reactor 3. Then, a reactive gas 11 e.g., ammonia, hydrazine, etc., a silicide gas 12, e.g., SiH4, SiF4, etc., the hydride 13 of Ge, a carrier gas 14, e.g., He, Ne, etc., and H2 gas are introduced through the inlet 5 into the reactor 3. The reactor is reduced in its pressure to 0.1-0.003 Torr or 0.03-0.0001 Torr, and then an inductive energy of 0.1-100MHz or 1-10GHz from a microwave waveguide 6 is applied to the reactor to decompose ammonia, etc., whereby forming an electrically and chemically stable 2-30Angstrom -thick nitride film on the substrate.
JP1878980A 1980-02-18 1980-02-18 Inductive reduced pressure gaseous phase method Pending JPS56116869A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1878980A JPS56116869A (en) 1980-02-18 1980-02-18 Inductive reduced pressure gaseous phase method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1878980A JPS56116869A (en) 1980-02-18 1980-02-18 Inductive reduced pressure gaseous phase method

Publications (1)

Publication Number Publication Date
JPS56116869A true JPS56116869A (en) 1981-09-12

Family

ID=11981371

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1878980A Pending JPS56116869A (en) 1980-02-18 1980-02-18 Inductive reduced pressure gaseous phase method

Country Status (1)

Country Link
JP (1) JPS56116869A (en)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6016418A (en) * 1983-07-08 1985-01-28 Nippon Denshi Kogyo Kk Plasma cvd processing method
FR2600082A1 (en) * 1986-06-13 1987-12-18 Balzers Hochvakuum THERMO-CHEMICAL PROCESS FOR SURFACE TREATMENT IN REACTIVE GAS PLASMA, AND PARTS PROCESSED THEREBY
JPS63245975A (en) * 1987-04-01 1988-10-13 Semiconductor Energy Lab Co Ltd Superconductor device
JPS6473776A (en) * 1987-09-16 1989-03-20 Semiconductor Energy Lab Formation of superconducting oxide film
JPS6473778A (en) * 1987-09-16 1989-03-20 Semiconductor Energy Lab Formation of superconductive material of oxide
JPS6473777A (en) * 1987-09-16 1989-03-20 Semiconductor Energy Lab Formation of non-superconductive oxide film
JPH0195575A (en) * 1987-10-07 1989-04-13 Semiconductor Energy Lab Co Ltd Formation of oxide superconducting material
WO1999050899A1 (en) * 1998-03-27 1999-10-07 Tokyo University Of Agriculture & Technology Method for forming film
JP2009084585A (en) * 2007-09-27 2009-04-23 Fujifilm Corp Method for forming silicon nitride film

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6016418A (en) * 1983-07-08 1985-01-28 Nippon Denshi Kogyo Kk Plasma cvd processing method
FR2600082A1 (en) * 1986-06-13 1987-12-18 Balzers Hochvakuum THERMO-CHEMICAL PROCESS FOR SURFACE TREATMENT IN REACTIVE GAS PLASMA, AND PARTS PROCESSED THEREBY
JPS63245975A (en) * 1987-04-01 1988-10-13 Semiconductor Energy Lab Co Ltd Superconductor device
JPS6473776A (en) * 1987-09-16 1989-03-20 Semiconductor Energy Lab Formation of superconducting oxide film
JPS6473778A (en) * 1987-09-16 1989-03-20 Semiconductor Energy Lab Formation of superconductive material of oxide
JPS6473777A (en) * 1987-09-16 1989-03-20 Semiconductor Energy Lab Formation of non-superconductive oxide film
JPH0195575A (en) * 1987-10-07 1989-04-13 Semiconductor Energy Lab Co Ltd Formation of oxide superconducting material
WO1999050899A1 (en) * 1998-03-27 1999-10-07 Tokyo University Of Agriculture & Technology Method for forming film
US6746726B2 (en) 1998-03-27 2004-06-08 Tokyo University Of Agriculture & Technology Method for forming film
JP2009084585A (en) * 2007-09-27 2009-04-23 Fujifilm Corp Method for forming silicon nitride film

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