JPS5721813A - Forming method for film - Google Patents

Forming method for film

Info

Publication number
JPS5721813A
JPS5721813A JP9673280A JP9673280A JPS5721813A JP S5721813 A JPS5721813 A JP S5721813A JP 9673280 A JP9673280 A JP 9673280A JP 9673280 A JP9673280 A JP 9673280A JP S5721813 A JPS5721813 A JP S5721813A
Authority
JP
Japan
Prior art keywords
substrates
reactive gas
electric field
gas
semiconductor film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9673280A
Other languages
Japanese (ja)
Other versions
JPH0324053B2 (en
Inventor
Shunpei Yamazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP9673280A priority Critical patent/JPS5721813A/en
Publication of JPS5721813A publication Critical patent/JPS5721813A/en
Publication of JPH0324053B2 publication Critical patent/JPH0324053B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/517—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using a combination of discharges covered by two or more of groups C23C16/503 - C23C16/515
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Abstract

PURPOSE:To form a dense amorphous semiconductor film having less voids and defects on a substrate by chemically activating reactive gas containing mainly silicon by induction energy and then accelerating and flying the gas via DC electric field. CONSTITUTION:A plurality of substrates 1 are mounted in a quartz boat 1. A metallic electrode 11 made of stainless steel or the like is formed between the substrates, and DC voltage of -200--500V is applied between the electode and the substrates. Reactive gas, e.g., SiH4, SiF4, etc. and impurity are supplied to a container 7, microwave energty of 1-100GHz is applied in 10-300W simultaneously as high frequency energy, and the reactive gas is chemically activated and decomposed. The thus activated and decomposed gas is accelerated by a DC electric field, and is accumulated on the substrates 1. Thus, an amorphous semiconductor film having dense configuration can be formed on the substrates 1.
JP9673280A 1980-07-15 1980-07-15 Forming method for film Granted JPS5721813A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9673280A JPS5721813A (en) 1980-07-15 1980-07-15 Forming method for film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9673280A JPS5721813A (en) 1980-07-15 1980-07-15 Forming method for film

Publications (2)

Publication Number Publication Date
JPS5721813A true JPS5721813A (en) 1982-02-04
JPH0324053B2 JPH0324053B2 (en) 1991-04-02

Family

ID=14172887

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9673280A Granted JPS5721813A (en) 1980-07-15 1980-07-15 Forming method for film

Country Status (1)

Country Link
JP (1) JPS5721813A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58164220A (en) * 1982-03-24 1983-09-29 Sanyo Electric Co Ltd Manufacture of amorphous semiconductor
JPS61222121A (en) * 1985-03-27 1986-10-02 Canon Inc Functional deposit-film and method and apparatus for manufacturing said film
JPS61222280A (en) * 1985-03-28 1986-10-02 Canon Inc Photovoltaic element and method and manufacture thereof
US4937550A (en) * 1987-03-31 1990-06-26 Kanegafuchi Kagaku Kogyo Kabushiki Kaisha Strain sensor
WO1992005585A1 (en) * 1987-03-31 1992-04-02 Yoshihisa Tawada Distortion sensor
JPH06326304A (en) * 1993-05-13 1994-11-25 Nec Corp Manufacture of semiconductor device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52140267A (en) * 1976-05-19 1977-11-22 Nippon Telegr & Teleph Corp <Ntt> Vapor epitaxial crystal growing device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52140267A (en) * 1976-05-19 1977-11-22 Nippon Telegr & Teleph Corp <Ntt> Vapor epitaxial crystal growing device

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58164220A (en) * 1982-03-24 1983-09-29 Sanyo Electric Co Ltd Manufacture of amorphous semiconductor
JPS61222121A (en) * 1985-03-27 1986-10-02 Canon Inc Functional deposit-film and method and apparatus for manufacturing said film
JPS61222280A (en) * 1985-03-28 1986-10-02 Canon Inc Photovoltaic element and method and manufacture thereof
US4937550A (en) * 1987-03-31 1990-06-26 Kanegafuchi Kagaku Kogyo Kabushiki Kaisha Strain sensor
WO1992005585A1 (en) * 1987-03-31 1992-04-02 Yoshihisa Tawada Distortion sensor
JPH06326304A (en) * 1993-05-13 1994-11-25 Nec Corp Manufacture of semiconductor device
JPH0810765B2 (en) * 1993-05-13 1996-01-31 日本電気株式会社 Method for manufacturing semiconductor device

Also Published As

Publication number Publication date
JPH0324053B2 (en) 1991-04-02

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