JPS6464326A - Plasma cleaning method - Google Patents

Plasma cleaning method

Info

Publication number
JPS6464326A
JPS6464326A JP22021187A JP22021187A JPS6464326A JP S6464326 A JPS6464326 A JP S6464326A JP 22021187 A JP22021187 A JP 22021187A JP 22021187 A JP22021187 A JP 22021187A JP S6464326 A JPS6464326 A JP S6464326A
Authority
JP
Japan
Prior art keywords
cleaning
gas
plasma
cleaning gas
high frequency
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP22021187A
Other languages
Japanese (ja)
Other versions
JP2594967B2 (en
Inventor
Seiichi Watanabe
Fujitsugu Nakatsui
Keiji Ueyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP62220211A priority Critical patent/JP2594967B2/en
Publication of JPS6464326A publication Critical patent/JPS6464326A/en
Application granted granted Critical
Publication of JP2594967B2 publication Critical patent/JP2594967B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Abstract

PURPOSE:To improve cleaning speed by supplying O2+SF6 or a mixture gas of O2+SF6 as cleaning gas, and generating a plasma in the cleaning gas. CONSTITUTION:CHF3 is introduced from an etching gas source 2 into a treating chamber 1, a high frequency power is applied by a high frequency power source 5 to a lower electrode 4 to generate a plasma in etching gas. Thus, an SiO2 film is etched. Then, in order to remove reactive products adhered and deposited in the chamber 1, cleaning gas is introduced from a cleaning gas source 6 into the chamber 1, a high frequency power is applied to the electrode 4 similarly to the time of etching to generate a plasma in the cleaning gas. In this case, 4 types of gases added as additive gases of SF6, CF4, N2 or CHF3 to O2 are employed as the cleaning gas to obtain a higher cleaning speed than that in case of heretofore plasma cleaning with O2.
JP62220211A 1987-09-04 1987-09-04 Plasma cleaning method Expired - Lifetime JP2594967B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62220211A JP2594967B2 (en) 1987-09-04 1987-09-04 Plasma cleaning method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62220211A JP2594967B2 (en) 1987-09-04 1987-09-04 Plasma cleaning method

Publications (2)

Publication Number Publication Date
JPS6464326A true JPS6464326A (en) 1989-03-10
JP2594967B2 JP2594967B2 (en) 1997-03-26

Family

ID=16747629

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62220211A Expired - Lifetime JP2594967B2 (en) 1987-09-04 1987-09-04 Plasma cleaning method

Country Status (1)

Country Link
JP (1) JP2594967B2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100295700B1 (en) * 1995-07-13 2001-10-24 조셉 제이. 스위니 Method and apparatus for washing residues from chemical vapor deposition
US6852242B2 (en) 2001-02-23 2005-02-08 Zhi-Wen Sun Cleaning of multicompositional etchant residues
JP2008078678A (en) * 2007-11-02 2008-04-03 Hitachi Ltd Method for processing plasma

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6059739A (en) * 1983-09-13 1985-04-06 Fujitsu Ltd Dry cleaning method
JPS61184823A (en) * 1984-09-26 1986-08-18 テキサス　インスツルメンツ　インコ−ポレイテツド Making of integrated circuit
JPS61250185A (en) * 1985-04-25 1986-11-07 Anelva Corp Cleaning method for vacuum treatment device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6059739A (en) * 1983-09-13 1985-04-06 Fujitsu Ltd Dry cleaning method
JPS61184823A (en) * 1984-09-26 1986-08-18 テキサス　インスツルメンツ　インコ−ポレイテツド Making of integrated circuit
JPS61250185A (en) * 1985-04-25 1986-11-07 Anelva Corp Cleaning method for vacuum treatment device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100295700B1 (en) * 1995-07-13 2001-10-24 조셉 제이. 스위니 Method and apparatus for washing residues from chemical vapor deposition
US6852242B2 (en) 2001-02-23 2005-02-08 Zhi-Wen Sun Cleaning of multicompositional etchant residues
JP2008078678A (en) * 2007-11-02 2008-04-03 Hitachi Ltd Method for processing plasma

Also Published As

Publication number Publication date
JP2594967B2 (en) 1997-03-26

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