JPS5587438A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS5587438A JPS5587438A JP16402178A JP16402178A JPS5587438A JP S5587438 A JPS5587438 A JP S5587438A JP 16402178 A JP16402178 A JP 16402178A JP 16402178 A JP16402178 A JP 16402178A JP S5587438 A JPS5587438 A JP S5587438A
- Authority
- JP
- Japan
- Prior art keywords
- photoresist film
- radical
- tube
- changed
- quality
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Drying Of Semiconductors (AREA)
Abstract
PURPOSE: To remove in a short time a photoresist film which is formed on a semiconductor substrate and which has been used in a dry etching step, by subjecting the photoresist film to a plasma treatment using a gaseous mixture of a gas generating H* or CO* radical and O2.
CONSTITUTION: A semiconductor substrate 1 having a photoresist film which has been changed in quality and which is going to be removed is laid on a wafer holder 2 so as to be placed in a reaction tube 3. The air in the tube 3 is then removed to make the interior thereof vacuous, and O2 gas to which 20% H2 gas has been added is introduced into the tube 3 through a reaction gas introducing pipe 4. The internal pressure of the pipe 3 is set to around 1 Torr, and a high frequency current is applied to a high frequency coil 5 provided around the tube 3, to generate H* radical. The photoresist film the quality of which has been changed is reduced to ashes in 2W3 minutes due to H* radical referred to above, the ashes being then removed. CO* radical may also be used for this purpose. According to this method, a photoresist film, which has been exposed to fluorine ion or fluorine radical in the preceding step and which has been changed in quality can be removed in 1/3W1/5 of time required to remove a similar photoresist film by subjecting it to plasma treatment.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16402178A JPS5587438A (en) | 1978-12-25 | 1978-12-25 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16402178A JPS5587438A (en) | 1978-12-25 | 1978-12-25 | Manufacture of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5587438A true JPS5587438A (en) | 1980-07-02 |
Family
ID=15785273
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP16402178A Pending JPS5587438A (en) | 1978-12-25 | 1978-12-25 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5587438A (en) |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59169136A (en) * | 1983-03-16 | 1984-09-25 | Fujitsu Ltd | Method for detecting end of etching of resist film |
JPS59169137A (en) * | 1983-03-16 | 1984-09-25 | Fujitsu Ltd | Formation of pattern of organic film |
JPS6243132A (en) * | 1985-08-20 | 1987-02-25 | Sharp Corp | Plasma treatment method |
JPS63198331A (en) * | 1987-02-13 | 1988-08-17 | Tokyo Electron Ltd | Ashing apparatus |
JPH01134929A (en) * | 1987-11-19 | 1989-05-26 | Tokuda Seisakusho Ltd | Dryetching process |
JPH0291937A (en) * | 1988-09-29 | 1990-03-30 | Fujitsu Ltd | Ashing device and ashing using same |
JPH02263436A (en) * | 1989-04-03 | 1990-10-26 | Mitsubishi Electric Corp | Generating method of active chemical species and manufacture of electronic member material |
JPH07254589A (en) * | 1995-01-30 | 1995-10-03 | Hitachi Ltd | Post-processing of sample |
JPH08227877A (en) * | 1995-10-27 | 1996-09-03 | Hitachi Ltd | Plasma treatment method and device |
US7005385B2 (en) * | 2003-12-15 | 2006-02-28 | Infineon Technologies Ag | Method for removing a resist mask with high selectivity to a carbon hard mask used for semiconductor structuring |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4999558A (en) * | 1973-01-25 | 1974-09-20 | ||
JPS5151938A (en) * | 1974-10-31 | 1976-05-07 | Tokyo Ohka Kogyo Co Ltd | Fuotorejisutono kaikahoho |
JPS52113164A (en) * | 1976-03-19 | 1977-09-22 | Hitachi Ltd | Removal of organic agent |
-
1978
- 1978-12-25 JP JP16402178A patent/JPS5587438A/en active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4999558A (en) * | 1973-01-25 | 1974-09-20 | ||
JPS5151938A (en) * | 1974-10-31 | 1976-05-07 | Tokyo Ohka Kogyo Co Ltd | Fuotorejisutono kaikahoho |
JPS52113164A (en) * | 1976-03-19 | 1977-09-22 | Hitachi Ltd | Removal of organic agent |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59169136A (en) * | 1983-03-16 | 1984-09-25 | Fujitsu Ltd | Method for detecting end of etching of resist film |
JPS59169137A (en) * | 1983-03-16 | 1984-09-25 | Fujitsu Ltd | Formation of pattern of organic film |
JPS6243132A (en) * | 1985-08-20 | 1987-02-25 | Sharp Corp | Plasma treatment method |
JPS63198331A (en) * | 1987-02-13 | 1988-08-17 | Tokyo Electron Ltd | Ashing apparatus |
JPH01134929A (en) * | 1987-11-19 | 1989-05-26 | Tokuda Seisakusho Ltd | Dryetching process |
JPH0291937A (en) * | 1988-09-29 | 1990-03-30 | Fujitsu Ltd | Ashing device and ashing using same |
JPH02263436A (en) * | 1989-04-03 | 1990-10-26 | Mitsubishi Electric Corp | Generating method of active chemical species and manufacture of electronic member material |
JPH07254589A (en) * | 1995-01-30 | 1995-10-03 | Hitachi Ltd | Post-processing of sample |
JPH08227877A (en) * | 1995-10-27 | 1996-09-03 | Hitachi Ltd | Plasma treatment method and device |
US7005385B2 (en) * | 2003-12-15 | 2006-02-28 | Infineon Technologies Ag | Method for removing a resist mask with high selectivity to a carbon hard mask used for semiconductor structuring |
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