JPS5469074A - Plasma etching method - Google Patents

Plasma etching method

Info

Publication number
JPS5469074A
JPS5469074A JP13607677A JP13607677A JPS5469074A JP S5469074 A JPS5469074 A JP S5469074A JP 13607677 A JP13607677 A JP 13607677A JP 13607677 A JP13607677 A JP 13607677A JP S5469074 A JPS5469074 A JP S5469074A
Authority
JP
Japan
Prior art keywords
film
etching
plasma
gas
reaction gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13607677A
Other languages
Japanese (ja)
Inventor
Masahiko Yasuoka
Kazushi Nagata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP13607677A priority Critical patent/JPS5469074A/en
Publication of JPS5469074A publication Critical patent/JPS5469074A/en
Pending legal-status Critical Current

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  • Drying Of Semiconductors (AREA)
  • Electron Beam Exposure (AREA)

Abstract

PURPOSE: To remove the oxidizing material adsorbed onto the surface of the etched process substrate via the plasma of the reducing gas, and also to prevent the reduction of the etching speed due to the adsorption.
CONSTITUTION: Substrate assembly 6 is put on electrode 2, and the etching reaction gas for the halogen single substance or the halogenide plus the reducing gas of H2 or hydrocarbon or the like are introduced simultaneously while exhausting the gas in etching room 1 to secure 10-1W10-3 torr. After this, the high frequency voltage is applied to electrode plate 2 and 3, so the plasma of the etching reaction gas and the reducing gas is cuased. As a result, the oxidizing material adsorbed onto the main surface of exposed Al film on substrate 6, and at the same time the exposed Al film can be etched away via the plasma of the etching reaction gas. In such way, the Al film is etched selectively, thus increasing the etching speed by 2W5 times as high as the conventional speed and giving no deterioration virtually to the photo resist film on the Al film.
COPYRIGHT: (C)1979,JPO&Japio
JP13607677A 1977-11-11 1977-11-11 Plasma etching method Pending JPS5469074A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13607677A JPS5469074A (en) 1977-11-11 1977-11-11 Plasma etching method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13607677A JPS5469074A (en) 1977-11-11 1977-11-11 Plasma etching method

Publications (1)

Publication Number Publication Date
JPS5469074A true JPS5469074A (en) 1979-06-02

Family

ID=15166663

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13607677A Pending JPS5469074A (en) 1977-11-11 1977-11-11 Plasma etching method

Country Status (1)

Country Link
JP (1) JPS5469074A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS564584U (en) * 1979-06-25 1981-01-16
JPS5683943A (en) * 1979-12-12 1981-07-08 Matsushita Electronics Corp Plasma etching of aluminum film

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5061982A (en) * 1973-09-29 1975-05-27

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5061982A (en) * 1973-09-29 1975-05-27

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS564584U (en) * 1979-06-25 1981-01-16
JPS5683943A (en) * 1979-12-12 1981-07-08 Matsushita Electronics Corp Plasma etching of aluminum film

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