JPS5469074A - Plasma etching method - Google Patents
Plasma etching methodInfo
- Publication number
- JPS5469074A JPS5469074A JP13607677A JP13607677A JPS5469074A JP S5469074 A JPS5469074 A JP S5469074A JP 13607677 A JP13607677 A JP 13607677A JP 13607677 A JP13607677 A JP 13607677A JP S5469074 A JPS5469074 A JP S5469074A
- Authority
- JP
- Japan
- Prior art keywords
- film
- etching
- plasma
- gas
- reaction gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Drying Of Semiconductors (AREA)
- Electron Beam Exposure (AREA)
Abstract
PURPOSE: To remove the oxidizing material adsorbed onto the surface of the etched process substrate via the plasma of the reducing gas, and also to prevent the reduction of the etching speed due to the adsorption.
CONSTITUTION: Substrate assembly 6 is put on electrode 2, and the etching reaction gas for the halogen single substance or the halogenide plus the reducing gas of H2 or hydrocarbon or the like are introduced simultaneously while exhausting the gas in etching room 1 to secure 10-1W10-3 torr. After this, the high frequency voltage is applied to electrode plate 2 and 3, so the plasma of the etching reaction gas and the reducing gas is cuased. As a result, the oxidizing material adsorbed onto the main surface of exposed Al film on substrate 6, and at the same time the exposed Al film can be etched away via the plasma of the etching reaction gas. In such way, the Al film is etched selectively, thus increasing the etching speed by 2W5 times as high as the conventional speed and giving no deterioration virtually to the photo resist film on the Al film.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13607677A JPS5469074A (en) | 1977-11-11 | 1977-11-11 | Plasma etching method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13607677A JPS5469074A (en) | 1977-11-11 | 1977-11-11 | Plasma etching method |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5469074A true JPS5469074A (en) | 1979-06-02 |
Family
ID=15166663
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP13607677A Pending JPS5469074A (en) | 1977-11-11 | 1977-11-11 | Plasma etching method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5469074A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS564584U (en) * | 1979-06-25 | 1981-01-16 | ||
JPS5683943A (en) * | 1979-12-12 | 1981-07-08 | Matsushita Electronics Corp | Plasma etching of aluminum film |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5061982A (en) * | 1973-09-29 | 1975-05-27 |
-
1977
- 1977-11-11 JP JP13607677A patent/JPS5469074A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5061982A (en) * | 1973-09-29 | 1975-05-27 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS564584U (en) * | 1979-06-25 | 1981-01-16 | ||
JPS5683943A (en) * | 1979-12-12 | 1981-07-08 | Matsushita Electronics Corp | Plasma etching of aluminum film |
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