JPS5683943A - Plasma etching of aluminum film - Google Patents

Plasma etching of aluminum film

Info

Publication number
JPS5683943A
JPS5683943A JP16179679A JP16179679A JPS5683943A JP S5683943 A JPS5683943 A JP S5683943A JP 16179679 A JP16179679 A JP 16179679A JP 16179679 A JP16179679 A JP 16179679A JP S5683943 A JPS5683943 A JP S5683943A
Authority
JP
Japan
Prior art keywords
etching
torr
piece
power
ccl4
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16179679A
Other languages
Japanese (ja)
Inventor
Toru Okuma
Kenji Mitsui
Morio Inoue
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Priority to JP16179679A priority Critical patent/JPS5683943A/en
Publication of JPS5683943A publication Critical patent/JPS5683943A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
    • H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE:To provide Al wiring having a high density and a high accuracy by a method wherein either a chloride gas or a gas added with substance for absorbing a chlorine radical is selectively used, a high frequency power is selectively applied thereto. CONSTITUTION:SiO2 1, Al 2 and Al2O3 5 are piled on a Si base plate 3, a resist mask 4 is applied and they are arranged in a plasma reaction pipe. Partial pressures of CCl4, He, H2 are kept at 0.2, 0.17, 0.09 torr, respectively, a high frequency power of 120W/piece is applied and Al2O3 5 is abruptly removed. Then, the power is reduced to 80W/piece to have an etching of Al 2. Lastly, a flow-in of He is terminated, some mixed gases of CCl4 with 0.2 torr and He with 0.17 torr are flowed in, and an etching is performed with a power of 80W/piece. At this time, since there is no H2, etching speed for Al is improved, Al is selectively etched by a slight side etching, resulting in that Al wiring pattern having less disturbance in the base plate or interbase plates and having a high accuracy may be provided.
JP16179679A 1979-12-12 1979-12-12 Plasma etching of aluminum film Pending JPS5683943A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16179679A JPS5683943A (en) 1979-12-12 1979-12-12 Plasma etching of aluminum film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16179679A JPS5683943A (en) 1979-12-12 1979-12-12 Plasma etching of aluminum film

Publications (1)

Publication Number Publication Date
JPS5683943A true JPS5683943A (en) 1981-07-08

Family

ID=15742067

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16179679A Pending JPS5683943A (en) 1979-12-12 1979-12-12 Plasma etching of aluminum film

Country Status (1)

Country Link
JP (1) JPS5683943A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59161823A (en) * 1983-03-07 1984-09-12 Hitachi Ltd Method for controlling anisotropic etching
JPS6050923A (en) * 1983-08-31 1985-03-22 Hitachi Ltd Method of plasma surface treatment and device therefor
JPH07193056A (en) * 1994-07-11 1995-07-28 Hitachi Ltd Etching control method
US5827436A (en) * 1995-03-31 1998-10-27 Sony Corporation Method for etching aluminum metal films

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5469074A (en) * 1977-11-11 1979-06-02 Mitsubishi Electric Corp Plasma etching method

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5469074A (en) * 1977-11-11 1979-06-02 Mitsubishi Electric Corp Plasma etching method

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59161823A (en) * 1983-03-07 1984-09-12 Hitachi Ltd Method for controlling anisotropic etching
JPS6050923A (en) * 1983-08-31 1985-03-22 Hitachi Ltd Method of plasma surface treatment and device therefor
JPH0473287B2 (en) * 1983-08-31 1992-11-20 Hitachi Ltd
JPH07193056A (en) * 1994-07-11 1995-07-28 Hitachi Ltd Etching control method
US5827436A (en) * 1995-03-31 1998-10-27 Sony Corporation Method for etching aluminum metal films

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