JPS56125840A - Cleaning method of dry etching device - Google Patents

Cleaning method of dry etching device

Info

Publication number
JPS56125840A
JPS56125840A JP2876580A JP2876580A JPS56125840A JP S56125840 A JPS56125840 A JP S56125840A JP 2876580 A JP2876580 A JP 2876580A JP 2876580 A JP2876580 A JP 2876580A JP S56125840 A JPS56125840 A JP S56125840A
Authority
JP
Japan
Prior art keywords
etching device
dry etching
cleaning method
gas
induced
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2876580A
Other languages
Japanese (ja)
Inventor
Tetsuya Ogawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP2876580A priority Critical patent/JPS56125840A/en
Publication of JPS56125840A publication Critical patent/JPS56125840A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02019—Chemical etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE:To improve the working ratio of an etching device decreasing a number of working processes by a method wherein oxygen gas or a gas containing oxygen is induced in the dry etching device to be made plasma, and deposits in the device is removed. CONSTITUTION:After an etching is applied in the dry etching device having a reactive gas flow-in port 3, the oxygen gas or the gas containing oxygen is induced to be made plasma, whereby a film composed of organic matters adhering to an internal wall of a reaction vessel 1 is removed in the form of C, CO2, F or COF. Whereby the dry etching device is clarified in a sample process, reproducibility of the etching can be improved, and the working ratio of the etching device is also improved due to the decrease of the working processes.
JP2876580A 1980-03-07 1980-03-07 Cleaning method of dry etching device Pending JPS56125840A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2876580A JPS56125840A (en) 1980-03-07 1980-03-07 Cleaning method of dry etching device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2876580A JPS56125840A (en) 1980-03-07 1980-03-07 Cleaning method of dry etching device

Publications (1)

Publication Number Publication Date
JPS56125840A true JPS56125840A (en) 1981-10-02

Family

ID=12257493

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2876580A Pending JPS56125840A (en) 1980-03-07 1980-03-07 Cleaning method of dry etching device

Country Status (1)

Country Link
JP (1) JPS56125840A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01115123A (en) * 1987-10-29 1989-05-08 Furukawa Electric Co Ltd:The Cleaning of plasma cvd device
JPH0250985A (en) * 1988-08-11 1990-02-20 Semiconductor Energy Lab Co Ltd Cleaning method of equipment for forming film made of carbon or material mainly composed of carbon
US6533952B2 (en) * 1999-06-08 2003-03-18 Euv Llc Mitigation of radiation induced surface contamination

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52117071A (en) * 1976-03-29 1977-10-01 Hitachi Ltd Self-cleaning type preparation of semiconductor
JPS5486968A (en) * 1977-12-23 1979-07-10 Hitachi Ltd Washing

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52117071A (en) * 1976-03-29 1977-10-01 Hitachi Ltd Self-cleaning type preparation of semiconductor
JPS5486968A (en) * 1977-12-23 1979-07-10 Hitachi Ltd Washing

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01115123A (en) * 1987-10-29 1989-05-08 Furukawa Electric Co Ltd:The Cleaning of plasma cvd device
JPH0250985A (en) * 1988-08-11 1990-02-20 Semiconductor Energy Lab Co Ltd Cleaning method of equipment for forming film made of carbon or material mainly composed of carbon
US6533952B2 (en) * 1999-06-08 2003-03-18 Euv Llc Mitigation of radiation induced surface contamination

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