JPS5583229A - Producing semiconductor device - Google Patents
Producing semiconductor deviceInfo
- Publication number
- JPS5583229A JPS5583229A JP15835578A JP15835578A JPS5583229A JP S5583229 A JPS5583229 A JP S5583229A JP 15835578 A JP15835578 A JP 15835578A JP 15835578 A JP15835578 A JP 15835578A JP S5583229 A JPS5583229 A JP S5583229A
- Authority
- JP
- Japan
- Prior art keywords
- platinum
- silicate layer
- sputtering
- substrate
- vacuum chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
- Drying Of Semiconductors (AREA)
Abstract
PURPOSE: To form peel-free platinum silicate layer with good reproducibility by using vacuum chamber to perform pretreatment, platinum sputtering, platinum silicate layer formation, and platinum removal continuously.
CONSTITUTION: Ar sputtering is used in a vacuum chamber to selectively etch Si substrate to form opening 3. After cleaning, sputtering is performed in Ar atmosphere to form platinum layer 5 on the substrate 1. Then, the substrate is heated to form platinum silicate layer 6 on the opening 3. Again Ar sputtering etching is performed whereby differential etching speed is utilized to remove platinum, forming platinum silicate layer 6 on the surface electrode area. The method provides a simple process to form peel-free platinum silicate layer with good reproducibility while preventing SiO2 film 2 from being damaged.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15835578A JPS5583229A (en) | 1978-12-19 | 1978-12-19 | Producing semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15835578A JPS5583229A (en) | 1978-12-19 | 1978-12-19 | Producing semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5583229A true JPS5583229A (en) | 1980-06-23 |
Family
ID=15669842
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15835578A Pending JPS5583229A (en) | 1978-12-19 | 1978-12-19 | Producing semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5583229A (en) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57208169A (en) * | 1981-06-17 | 1982-12-21 | Toshiba Corp | Semiconductor device and manufacture thereof |
JPS58200533A (en) * | 1982-04-30 | 1983-11-22 | テキサス・インスツルメンツ・インコ−ポレイテツド | Method of attaching metal layer to surface of insulating layer |
JPS5994820A (en) * | 1982-11-22 | 1984-05-31 | Nec Corp | Manufacture of semiconductor device |
JPS62185314A (en) * | 1986-02-08 | 1987-08-13 | Rohm Co Ltd | Formation of electrode |
JPH01252763A (en) * | 1983-05-06 | 1989-10-09 | Texas Instr Inc <Ti> | Formation of metal silicide |
JPH028381A (en) * | 1987-12-15 | 1990-01-11 | Res Dev Corp Of Japan | Method for cleaning surface of solid silicon |
-
1978
- 1978-12-19 JP JP15835578A patent/JPS5583229A/en active Pending
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57208169A (en) * | 1981-06-17 | 1982-12-21 | Toshiba Corp | Semiconductor device and manufacture thereof |
JPS58200533A (en) * | 1982-04-30 | 1983-11-22 | テキサス・インスツルメンツ・インコ−ポレイテツド | Method of attaching metal layer to surface of insulating layer |
JPS5994820A (en) * | 1982-11-22 | 1984-05-31 | Nec Corp | Manufacture of semiconductor device |
JPH01252763A (en) * | 1983-05-06 | 1989-10-09 | Texas Instr Inc <Ti> | Formation of metal silicide |
JPH0581664B2 (en) * | 1983-05-06 | 1993-11-15 | Texas Instruments Inc | |
JPS62185314A (en) * | 1986-02-08 | 1987-08-13 | Rohm Co Ltd | Formation of electrode |
JPH028381A (en) * | 1987-12-15 | 1990-01-11 | Res Dev Corp Of Japan | Method for cleaning surface of solid silicon |
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