JPS5583229A - Producing semiconductor device - Google Patents

Producing semiconductor device

Info

Publication number
JPS5583229A
JPS5583229A JP15835578A JP15835578A JPS5583229A JP S5583229 A JPS5583229 A JP S5583229A JP 15835578 A JP15835578 A JP 15835578A JP 15835578 A JP15835578 A JP 15835578A JP S5583229 A JPS5583229 A JP S5583229A
Authority
JP
Japan
Prior art keywords
platinum
silicate layer
sputtering
substrate
vacuum chamber
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15835578A
Other languages
Japanese (ja)
Inventor
Toshihiko Ono
Yoshinobu Monma
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP15835578A priority Critical patent/JPS5583229A/en
Publication of JPS5583229A publication Critical patent/JPS5583229A/en
Pending legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE: To form peel-free platinum silicate layer with good reproducibility by using vacuum chamber to perform pretreatment, platinum sputtering, platinum silicate layer formation, and platinum removal continuously.
CONSTITUTION: Ar sputtering is used in a vacuum chamber to selectively etch Si substrate to form opening 3. After cleaning, sputtering is performed in Ar atmosphere to form platinum layer 5 on the substrate 1. Then, the substrate is heated to form platinum silicate layer 6 on the opening 3. Again Ar sputtering etching is performed whereby differential etching speed is utilized to remove platinum, forming platinum silicate layer 6 on the surface electrode area. The method provides a simple process to form peel-free platinum silicate layer with good reproducibility while preventing SiO2 film 2 from being damaged.
COPYRIGHT: (C)1980,JPO&Japio
JP15835578A 1978-12-19 1978-12-19 Producing semiconductor device Pending JPS5583229A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15835578A JPS5583229A (en) 1978-12-19 1978-12-19 Producing semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15835578A JPS5583229A (en) 1978-12-19 1978-12-19 Producing semiconductor device

Publications (1)

Publication Number Publication Date
JPS5583229A true JPS5583229A (en) 1980-06-23

Family

ID=15669842

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15835578A Pending JPS5583229A (en) 1978-12-19 1978-12-19 Producing semiconductor device

Country Status (1)

Country Link
JP (1) JPS5583229A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57208169A (en) * 1981-06-17 1982-12-21 Toshiba Corp Semiconductor device and manufacture thereof
JPS58200533A (en) * 1982-04-30 1983-11-22 テキサス・インスツルメンツ・インコ−ポレイテツド Method of attaching metal layer to surface of insulating layer
JPS5994820A (en) * 1982-11-22 1984-05-31 Nec Corp Manufacture of semiconductor device
JPS62185314A (en) * 1986-02-08 1987-08-13 Rohm Co Ltd Formation of electrode
JPH01252763A (en) * 1983-05-06 1989-10-09 Texas Instr Inc <Ti> Formation of metal silicide
JPH028381A (en) * 1987-12-15 1990-01-11 Res Dev Corp Of Japan Method for cleaning surface of solid silicon

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57208169A (en) * 1981-06-17 1982-12-21 Toshiba Corp Semiconductor device and manufacture thereof
JPS58200533A (en) * 1982-04-30 1983-11-22 テキサス・インスツルメンツ・インコ−ポレイテツド Method of attaching metal layer to surface of insulating layer
JPS5994820A (en) * 1982-11-22 1984-05-31 Nec Corp Manufacture of semiconductor device
JPH01252763A (en) * 1983-05-06 1989-10-09 Texas Instr Inc <Ti> Formation of metal silicide
JPH0581664B2 (en) * 1983-05-06 1993-11-15 Texas Instruments Inc
JPS62185314A (en) * 1986-02-08 1987-08-13 Rohm Co Ltd Formation of electrode
JPH028381A (en) * 1987-12-15 1990-01-11 Res Dev Corp Of Japan Method for cleaning surface of solid silicon

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