JPS55115330A - Manufacturing method of semiconductor device - Google Patents

Manufacturing method of semiconductor device

Info

Publication number
JPS55115330A
JPS55115330A JP2270379A JP2270379A JPS55115330A JP S55115330 A JPS55115330 A JP S55115330A JP 2270379 A JP2270379 A JP 2270379A JP 2270379 A JP2270379 A JP 2270379A JP S55115330 A JPS55115330 A JP S55115330A
Authority
JP
Japan
Prior art keywords
front surface
substrate
oxide film
electrode
back surface
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2270379A
Other languages
Japanese (ja)
Inventor
Tsutomu Suzuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP2270379A priority Critical patent/JPS55115330A/en
Publication of JPS55115330A publication Critical patent/JPS55115330A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To eliminate deterioration of characteristic of substrate through elimination of contamination on a substrate by forming a back surface electrode before formation of a front surface electrode of a semiconductor substrate.
CONSTITUTION: A base layer and a emitter layer are formed utilizing opened window on the oxide film of a semiconductor substrate and a front surface is covered with a oxide film. Next thereto the back surface electrode is grinded or etched away to a specific thickness and an ohmic electrode is formed on it. After the preceding process the selectively opened windows are formed on the front surface of a substrate and furthermore contamination emerged during formation of the back surface electrode can be removed completely by etching away few hundred Å of the front surface oxide film. After the preceding process an ohmic electrode is formed and thus deterioration of characteristic is prevented.
COPYRIGHT: (C)1980,JPO&Japio
JP2270379A 1979-02-28 1979-02-28 Manufacturing method of semiconductor device Pending JPS55115330A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2270379A JPS55115330A (en) 1979-02-28 1979-02-28 Manufacturing method of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2270379A JPS55115330A (en) 1979-02-28 1979-02-28 Manufacturing method of semiconductor device

Publications (1)

Publication Number Publication Date
JPS55115330A true JPS55115330A (en) 1980-09-05

Family

ID=12090214

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2270379A Pending JPS55115330A (en) 1979-02-28 1979-02-28 Manufacturing method of semiconductor device

Country Status (1)

Country Link
JP (1) JPS55115330A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017107930A (en) * 2015-12-08 2017-06-15 豊田合成株式会社 Semiconductor device manufacturing method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017107930A (en) * 2015-12-08 2017-06-15 豊田合成株式会社 Semiconductor device manufacturing method

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