JPS5455378A - Production of semiconductor device - Google Patents
Production of semiconductor deviceInfo
- Publication number
- JPS5455378A JPS5455378A JP12186477A JP12186477A JPS5455378A JP S5455378 A JPS5455378 A JP S5455378A JP 12186477 A JP12186477 A JP 12186477A JP 12186477 A JP12186477 A JP 12186477A JP S5455378 A JPS5455378 A JP S5455378A
- Authority
- JP
- Japan
- Prior art keywords
- mask
- resist
- deposited
- film
- reaction chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Weting (AREA)
Abstract
PURPOSE: To form fine patterns by making discontinuous thin films around the mask openings on substrate main surface through plasma CVD and removing the mask.
CONSTITUTION: A doped SiO2 film 24 is deposited on a substrate 1 by applying a resist mask 23. The member to be processed is inserted into a hermetic reaction chamber 101 and plasma discharges are formed in a discharge chamber 105a' to introduce radical atoms into the reaction chamber, which are then deposited by being isolated to films 24a, 24b through CVD. The resist is lifted off to leave the film 24a, which is then heated, whereby a diffused layer 25 is formed. Since with this method etching by using resist as a mask is not performed and therefore there are no variations in size owing to undercuts and the diffused layer of extremely high resolution and high accuracy may be formed. In addition, the oxide films may be formed at 100°C or under, and therefore the photo resist may be used as a mask and giving of any damage to this is obviated
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12186477A JPS5455378A (en) | 1977-10-13 | 1977-10-13 | Production of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12186477A JPS5455378A (en) | 1977-10-13 | 1977-10-13 | Production of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5455378A true JPS5455378A (en) | 1979-05-02 |
Family
ID=14821809
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP12186477A Pending JPS5455378A (en) | 1977-10-13 | 1977-10-13 | Production of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5455378A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01227430A (en) * | 1988-03-08 | 1989-09-11 | Sony Corp | Vapor phase growth method |
US9513551B2 (en) | 2009-01-29 | 2016-12-06 | Digiflex Ltd. | Process for producing a photomask on a photopolymeric surface |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3907616A (en) * | 1972-11-15 | 1975-09-23 | Texas Instruments Inc | Method of forming doped dielectric layers utilizing reactive plasma deposition |
-
1977
- 1977-10-13 JP JP12186477A patent/JPS5455378A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3907616A (en) * | 1972-11-15 | 1975-09-23 | Texas Instruments Inc | Method of forming doped dielectric layers utilizing reactive plasma deposition |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01227430A (en) * | 1988-03-08 | 1989-09-11 | Sony Corp | Vapor phase growth method |
US9513551B2 (en) | 2009-01-29 | 2016-12-06 | Digiflex Ltd. | Process for producing a photomask on a photopolymeric surface |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS5690525A (en) | Manufacture of semiconductor device | |
JPS5455378A (en) | Production of semiconductor device | |
JPS57130431A (en) | Manufacture of semiconductor device | |
JPS57204148A (en) | Manufacture of semiconductor device | |
JPS6439749A (en) | Semiconductor device and manufacture thereof | |
JPS5469090A (en) | Manufacture of semiconductor device | |
JPS5591138A (en) | Die forming of semiconductor device | |
JPS57100733A (en) | Etching method for semiconductor substrate | |
JPS5496363A (en) | Electrode forming method for semiconductor device | |
JPS5772346A (en) | Manufacture of semiconductor device | |
JPS54107277A (en) | Production of semiconductor device | |
JPS5478668A (en) | Manufacture of semiconductor device | |
JPS6415951A (en) | Manufacture of semiconductor device | |
JPS5679446A (en) | Production of semiconductor device | |
JPS5558550A (en) | Manufacture of semiconductor device | |
JPS57190355A (en) | Semiconductor device | |
JPS5762543A (en) | Manufacture of semiconductor device | |
JPS5396673A (en) | Gas plasma etching method for sio2 film | |
JPS54116882A (en) | Manufacture of semiconductor device | |
JPS57177525A (en) | Etching method for silicon oxide | |
JPS6411325A (en) | Semiconductor device and manufacture thereof | |
JPS5493360A (en) | Plasma etching method | |
JPS5469091A (en) | Manufacture of semiconductor device | |
JPS6420641A (en) | Manufacture of semiconductor device | |
JPS54101292A (en) | Contact forming method |