JPS5455378A - Production of semiconductor device - Google Patents

Production of semiconductor device

Info

Publication number
JPS5455378A
JPS5455378A JP12186477A JP12186477A JPS5455378A JP S5455378 A JPS5455378 A JP S5455378A JP 12186477 A JP12186477 A JP 12186477A JP 12186477 A JP12186477 A JP 12186477A JP S5455378 A JPS5455378 A JP S5455378A
Authority
JP
Japan
Prior art keywords
mask
resist
deposited
film
reaction chamber
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12186477A
Other languages
Japanese (ja)
Inventor
Kazuo Niwa
Takeshi Kuramoto
Masashi Minato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP12186477A priority Critical patent/JPS5455378A/en
Publication of JPS5455378A publication Critical patent/JPS5455378A/en
Pending legal-status Critical Current

Links

Landscapes

  • Weting (AREA)

Abstract

PURPOSE: To form fine patterns by making discontinuous thin films around the mask openings on substrate main surface through plasma CVD and removing the mask.
CONSTITUTION: A doped SiO2 film 24 is deposited on a substrate 1 by applying a resist mask 23. The member to be processed is inserted into a hermetic reaction chamber 101 and plasma discharges are formed in a discharge chamber 105a' to introduce radical atoms into the reaction chamber, which are then deposited by being isolated to films 24a, 24b through CVD. The resist is lifted off to leave the film 24a, which is then heated, whereby a diffused layer 25 is formed. Since with this method etching by using resist as a mask is not performed and therefore there are no variations in size owing to undercuts and the diffused layer of extremely high resolution and high accuracy may be formed. In addition, the oxide films may be formed at 100°C or under, and therefore the photo resist may be used as a mask and giving of any damage to this is obviated
COPYRIGHT: (C)1979,JPO&Japio
JP12186477A 1977-10-13 1977-10-13 Production of semiconductor device Pending JPS5455378A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12186477A JPS5455378A (en) 1977-10-13 1977-10-13 Production of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12186477A JPS5455378A (en) 1977-10-13 1977-10-13 Production of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5455378A true JPS5455378A (en) 1979-05-02

Family

ID=14821809

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12186477A Pending JPS5455378A (en) 1977-10-13 1977-10-13 Production of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5455378A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01227430A (en) * 1988-03-08 1989-09-11 Sony Corp Vapor phase growth method
US9513551B2 (en) 2009-01-29 2016-12-06 Digiflex Ltd. Process for producing a photomask on a photopolymeric surface

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3907616A (en) * 1972-11-15 1975-09-23 Texas Instruments Inc Method of forming doped dielectric layers utilizing reactive plasma deposition

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3907616A (en) * 1972-11-15 1975-09-23 Texas Instruments Inc Method of forming doped dielectric layers utilizing reactive plasma deposition

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01227430A (en) * 1988-03-08 1989-09-11 Sony Corp Vapor phase growth method
US9513551B2 (en) 2009-01-29 2016-12-06 Digiflex Ltd. Process for producing a photomask on a photopolymeric surface

Similar Documents

Publication Publication Date Title
JPS5690525A (en) Manufacture of semiconductor device
JPS5455378A (en) Production of semiconductor device
JPS57130431A (en) Manufacture of semiconductor device
JPS57204148A (en) Manufacture of semiconductor device
JPS6439749A (en) Semiconductor device and manufacture thereof
JPS5469090A (en) Manufacture of semiconductor device
JPS5591138A (en) Die forming of semiconductor device
JPS57100733A (en) Etching method for semiconductor substrate
JPS5496363A (en) Electrode forming method for semiconductor device
JPS5772346A (en) Manufacture of semiconductor device
JPS54107277A (en) Production of semiconductor device
JPS5478668A (en) Manufacture of semiconductor device
JPS6415951A (en) Manufacture of semiconductor device
JPS5679446A (en) Production of semiconductor device
JPS5558550A (en) Manufacture of semiconductor device
JPS57190355A (en) Semiconductor device
JPS5762543A (en) Manufacture of semiconductor device
JPS5396673A (en) Gas plasma etching method for sio2 film
JPS54116882A (en) Manufacture of semiconductor device
JPS57177525A (en) Etching method for silicon oxide
JPS6411325A (en) Semiconductor device and manufacture thereof
JPS5493360A (en) Plasma etching method
JPS5469091A (en) Manufacture of semiconductor device
JPS6420641A (en) Manufacture of semiconductor device
JPS54101292A (en) Contact forming method