JPS5493360A - Plasma etching method - Google Patents

Plasma etching method

Info

Publication number
JPS5493360A
JPS5493360A JP15841277A JP15841277A JPS5493360A JP S5493360 A JPS5493360 A JP S5493360A JP 15841277 A JP15841277 A JP 15841277A JP 15841277 A JP15841277 A JP 15841277A JP S5493360 A JPS5493360 A JP S5493360A
Authority
JP
Japan
Prior art keywords
film
etching
substrate
sio
taking
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15841277A
Other languages
Japanese (ja)
Inventor
Moritaka Nakamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP15841277A priority Critical patent/JPS5493360A/en
Publication of JPS5493360A publication Critical patent/JPS5493360A/en
Pending legal-status Critical Current

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  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE: To avoid the contaminaton of substrate due to polymer thin film including C, by performing etching in the gas plasma using etchant taking BF3 as the major component, in patterning the glass film such as SiO2 and Si3N4 placed on the semiconductor substrate.
CONSTITUTION: SiO2 film, Si3N4 film, PSG film, BSG film and AsSG film coated on the semiconductor substrate are covered with the pattern of photo resist film, and etching is made with gas plasma. As the gaseous etchant used, that taking BF3 as major component is used and etching is made while producing plasma between the parallel plate electrodes. Thus, no polymer thin film including C which is difficult for removal on the substrate is caused and the accurate pattern without contamination can be obtained.
COPYRIGHT: (C)1979,JPO&Japio
JP15841277A 1977-12-30 1977-12-30 Plasma etching method Pending JPS5493360A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15841277A JPS5493360A (en) 1977-12-30 1977-12-30 Plasma etching method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15841277A JPS5493360A (en) 1977-12-30 1977-12-30 Plasma etching method

Publications (1)

Publication Number Publication Date
JPS5493360A true JPS5493360A (en) 1979-07-24

Family

ID=15671181

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15841277A Pending JPS5493360A (en) 1977-12-30 1977-12-30 Plasma etching method

Country Status (1)

Country Link
JP (1) JPS5493360A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02185977A (en) * 1989-01-12 1990-07-20 Sanyo Electric Co Ltd Film forming vacuum device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02185977A (en) * 1989-01-12 1990-07-20 Sanyo Electric Co Ltd Film forming vacuum device

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