JPS54142077A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS54142077A
JPS54142077A JP5042078A JP5042078A JPS54142077A JP S54142077 A JPS54142077 A JP S54142077A JP 5042078 A JP5042078 A JP 5042078A JP 5042078 A JP5042078 A JP 5042078A JP S54142077 A JPS54142077 A JP S54142077A
Authority
JP
Japan
Prior art keywords
layer
side wall
ion
substrate
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5042078A
Other languages
Japanese (ja)
Inventor
Shuji Endo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP5042078A priority Critical patent/JPS54142077A/en
Publication of JPS54142077A publication Critical patent/JPS54142077A/en
Pending legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Weting (AREA)

Abstract

PURPOSE: To ensure a uniform thickness of the electrode metal layer provided on the side wall of the substrate by drilling a window on the semiconductor substrate after coating the insulator film and accelerating the etching speed for the side wall of the window by irradiation of the inactive atom ion on the entire surface in order to secure a smooth side wall by etching.
CONSTITUTION: SiO2 film 8 is coated on Si substrate 7 and then covered with photo resist layer 9, and layer 9 is given patterning with a fixed width. Then layer 9 is used as the mask to etch exposed film 8 via the plasma using the Freon gas, and a right-angled and sharp window is drilled to substrate 7. Afrer this, layer 9 is removed with irradiation of Ar+ ion over the entire surface, and then an etching is applied with the mixture solution of hydrofluoric acid, ammonium fluoride and water. As a result, the etching speed is accelerated for film 7 owing to irradiation of the ion and the ion splash. As a result, the side wall is rounded. After this, Al layer 12 for electrode wiring is coated on the entire surface, thus ensuring a uniform thickness for layer 12.
COPYRIGHT: (C)1979,JPO&Japio
JP5042078A 1978-04-27 1978-04-27 Manufacture of semiconductor device Pending JPS54142077A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5042078A JPS54142077A (en) 1978-04-27 1978-04-27 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5042078A JPS54142077A (en) 1978-04-27 1978-04-27 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS54142077A true JPS54142077A (en) 1979-11-05

Family

ID=12858364

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5042078A Pending JPS54142077A (en) 1978-04-27 1978-04-27 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS54142077A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5789243A (en) * 1980-11-26 1982-06-03 Seiko Epson Corp Fabrication of semiconductor device
JPS57204151A (en) * 1981-06-09 1982-12-14 Nec Corp Manufacture of semiconductor device
JP2006043141A (en) * 2004-08-04 2006-02-16 Katsushika:Kk Applicator for makeup

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5494281A (en) * 1978-01-10 1979-07-25 Toshiba Corp Production of semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5494281A (en) * 1978-01-10 1979-07-25 Toshiba Corp Production of semiconductor device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5789243A (en) * 1980-11-26 1982-06-03 Seiko Epson Corp Fabrication of semiconductor device
JPS57204151A (en) * 1981-06-09 1982-12-14 Nec Corp Manufacture of semiconductor device
JPS6312382B2 (en) * 1981-06-09 1988-03-18 Nippon Electric Co
JP2006043141A (en) * 2004-08-04 2006-02-16 Katsushika:Kk Applicator for makeup

Similar Documents

Publication Publication Date Title
JPS5684476A (en) Etching method of gas plasma
JPS56139676A (en) Method and apparatus for etching metal sheet
JPS54142077A (en) Manufacture of semiconductor device
JPS5772321A (en) Manufacture of seiconductor device
JPS5591130A (en) Production of semiconductor device
JPS5687343A (en) Forming method of wiring
JPS56100420A (en) Plasma etching method for oxidized silicon film
JPS57149752A (en) Structure of multilayer wiring
JPS5469090A (en) Manufacture of semiconductor device
JPS57141642A (en) Formation of pattern
JPS5587436A (en) Method of producing semiconductor device
JPS57155381A (en) Wet etching method
JPS5511167A (en) Dry etching method
JPS5496363A (en) Electrode forming method for semiconductor device
JPS5789243A (en) Fabrication of semiconductor device
JPS57141641A (en) Formation of positive pattern
JPS55134932A (en) Preparation of semiconductor device
JPS5493360A (en) Plasma etching method
JPS53135846A (en) Etching method
JPS54162490A (en) Manufacture of semiconductor device
JPS5598828A (en) Removing method of thin organic film
JPS5749230A (en) Forming method for electrode
JPS551132A (en) Dry etching
JPS54154983A (en) Forming method of metal wiring
JPS54162460A (en) Electrode forming method