JPS5789243A - Fabrication of semiconductor device - Google Patents
Fabrication of semiconductor deviceInfo
- Publication number
- JPS5789243A JPS5789243A JP16619180A JP16619180A JPS5789243A JP S5789243 A JPS5789243 A JP S5789243A JP 16619180 A JP16619180 A JP 16619180A JP 16619180 A JP16619180 A JP 16619180A JP S5789243 A JPS5789243 A JP S5789243A
- Authority
- JP
- Japan
- Prior art keywords
- interlaid
- opening
- insulation layer
- etching process
- deposited
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- 238000009413 insulation Methods 0.000 abstract 4
- 238000000034 method Methods 0.000 abstract 4
- 239000011248 coating agent Substances 0.000 abstract 3
- 238000000576 coating method Methods 0.000 abstract 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 abstract 2
- 238000001312 dry etching Methods 0.000 abstract 2
- 238000001039 wet etching Methods 0.000 abstract 2
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- 238000001020 plasma etching Methods 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 239000002904 solvent Substances 0.000 abstract 1
- 238000000992 sputter etching Methods 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- General Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Inorganic Chemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
- Drying Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Weting (AREA)
Abstract
PURPOSE:To prevent breakage of interconnection coating by forming a contact hole by wet etching or an interlaid insulation layer after a dry etching process is made by utilizing a resist coating with an opening. CONSTITUTION:The opening is provided on the resist coating 6 deposited on the interlaid insulation layer 5 formed on a silicon substrate 7 and then baking is carried out. After this, the interlaid insulation layer is removed by the dry etching process such as plasma or ion etching so as to form the opening of a rectangular cross-section. Next, the opening is made to be a tapered cross-section with wider upside by a wet etching process using a solvent of hydrofluoric acid or ammonium fluoride. By such a procedure, breakage of aluminum interconnections etc. deposited on the interlaid insulation layer can be prevented.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16619180A JPS5789243A (en) | 1980-11-26 | 1980-11-26 | Fabrication of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16619180A JPS5789243A (en) | 1980-11-26 | 1980-11-26 | Fabrication of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5789243A true JPS5789243A (en) | 1982-06-03 |
Family
ID=15826769
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16619180A Pending JPS5789243A (en) | 1980-11-26 | 1980-11-26 | Fabrication of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5789243A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0259098A2 (en) * | 1986-09-04 | 1988-03-09 | AT&T Corp. | Integrated circuits having stepped dielectric regions |
| JPH01119042A (en) * | 1987-10-31 | 1989-05-11 | Nec Corp | Manufacture of semiconductor device |
| US6476496B1 (en) | 1999-06-28 | 2002-11-05 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device and method of manufacturing the same |
| US7041593B2 (en) | 2001-08-01 | 2006-05-09 | Mitsubishi Denki Kabushiki Kaisha | Method for manufacturing thin-film structure |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5487172A (en) * | 1977-12-23 | 1979-07-11 | Hitachi Ltd | Manufacture for simiconductor device |
| JPS54142077A (en) * | 1978-04-27 | 1979-11-05 | Fujitsu Ltd | Manufacture of semiconductor device |
-
1980
- 1980-11-26 JP JP16619180A patent/JPS5789243A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5487172A (en) * | 1977-12-23 | 1979-07-11 | Hitachi Ltd | Manufacture for simiconductor device |
| JPS54142077A (en) * | 1978-04-27 | 1979-11-05 | Fujitsu Ltd | Manufacture of semiconductor device |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0259098A2 (en) * | 1986-09-04 | 1988-03-09 | AT&T Corp. | Integrated circuits having stepped dielectric regions |
| JPH01119042A (en) * | 1987-10-31 | 1989-05-11 | Nec Corp | Manufacture of semiconductor device |
| US6476496B1 (en) | 1999-06-28 | 2002-11-05 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device and method of manufacturing the same |
| KR100371287B1 (en) * | 1999-06-28 | 2003-02-06 | 미쓰비시덴키 가부시키가이샤 | Semiconductor device and method of manufacturing the same |
| US7041593B2 (en) | 2001-08-01 | 2006-05-09 | Mitsubishi Denki Kabushiki Kaisha | Method for manufacturing thin-film structure |
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