JPS5487172A - Manufacture for simiconductor device - Google Patents

Manufacture for simiconductor device

Info

Publication number
JPS5487172A
JPS5487172A JP15448577A JP15448577A JPS5487172A JP S5487172 A JPS5487172 A JP S5487172A JP 15448577 A JP15448577 A JP 15448577A JP 15448577 A JP15448577 A JP 15448577A JP S5487172 A JPS5487172 A JP S5487172A
Authority
JP
Japan
Prior art keywords
film
hole
sio
etching
smooth
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15448577A
Other languages
Japanese (ja)
Inventor
Ryoichi Fukuyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP15448577A priority Critical patent/JPS5487172A/en
Publication of JPS5487172A publication Critical patent/JPS5487172A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Weting (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE: To provide the opening smooth for the shoulder and good in the machining accuracy, by immersing the protective film of substrate into etching solution, after drying etching on the way of thickness from the surface for the substrate protection film.
CONSTITUTION: The resist mask 4 is overlaid on the surface protection film SiO2 3, and the film 3 is plasma-etched on the way of thickness of the film 3, remaining SiO2 by about 0.1 μ at the bottom of the hole 7. Next, the remaining film is etched by immersing it in NH4F solution, forming the hole 8. At this time, the SiO23 is opened with smooth shape with side etching even for the surface in contact with the resist mask 4. The mask is removed and the Al electrode 9 is provided. Since the shoulder of the hole 8 is smooth, no open wire is caused, and further, the remaining SiO2 film is thin, the accuracy of size of the hole 8 is very excellently formed with wet etching.
COPYRIGHT: (C)1979,JPO&Japio
JP15448577A 1977-12-23 1977-12-23 Manufacture for simiconductor device Pending JPS5487172A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15448577A JPS5487172A (en) 1977-12-23 1977-12-23 Manufacture for simiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15448577A JPS5487172A (en) 1977-12-23 1977-12-23 Manufacture for simiconductor device

Publications (1)

Publication Number Publication Date
JPS5487172A true JPS5487172A (en) 1979-07-11

Family

ID=15585265

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15448577A Pending JPS5487172A (en) 1977-12-23 1977-12-23 Manufacture for simiconductor device

Country Status (1)

Country Link
JP (1) JPS5487172A (en)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5626442A (en) * 1979-08-13 1981-03-14 Chiyou Lsi Gijutsu Kenkyu Kumiai Method for pattern formation
JPS56157025A (en) * 1980-05-07 1981-12-04 Nec Corp Manufacture of semiconductor device
JPS577936A (en) * 1980-06-18 1982-01-16 Fujitsu Ltd Manufacture of semiconductor device
JPS5789243A (en) * 1980-11-26 1982-06-03 Seiko Epson Corp Fabrication of semiconductor device
JPS5789223A (en) * 1980-11-25 1982-06-03 Seiko Epson Corp Manufacture of semiconductor device
JPS57124440A (en) * 1981-01-27 1982-08-03 Nec Corp Compound etching method
JPS57199223A (en) * 1981-06-01 1982-12-07 Matsushita Electric Ind Co Ltd Manufacture of semiconductor device
JPS584932A (en) * 1981-06-30 1983-01-12 Fujitsu Ltd Manufacture for semiconductor device
JPS58143535A (en) * 1982-02-22 1983-08-26 Hitachi Ltd Manufacture of semiconductor device
JPS59130426A (en) * 1983-01-17 1984-07-27 Toshiba Corp Manufacture of semiconductor device
JPS60239017A (en) * 1984-05-11 1985-11-27 Seiko Instr & Electronics Ltd Manufacture of semiconductor device

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5626442A (en) * 1979-08-13 1981-03-14 Chiyou Lsi Gijutsu Kenkyu Kumiai Method for pattern formation
JPS56157025A (en) * 1980-05-07 1981-12-04 Nec Corp Manufacture of semiconductor device
JPH0313744B2 (en) * 1980-06-18 1991-02-25 Fujitsu Ltd
JPS577936A (en) * 1980-06-18 1982-01-16 Fujitsu Ltd Manufacture of semiconductor device
JPS5789223A (en) * 1980-11-25 1982-06-03 Seiko Epson Corp Manufacture of semiconductor device
JPS5789243A (en) * 1980-11-26 1982-06-03 Seiko Epson Corp Fabrication of semiconductor device
JPS57124440A (en) * 1981-01-27 1982-08-03 Nec Corp Compound etching method
JPS57199223A (en) * 1981-06-01 1982-12-07 Matsushita Electric Ind Co Ltd Manufacture of semiconductor device
JPS584932A (en) * 1981-06-30 1983-01-12 Fujitsu Ltd Manufacture for semiconductor device
JPH0359577B2 (en) * 1981-06-30 1991-09-11 Fujitsu Ltd
JPS58143535A (en) * 1982-02-22 1983-08-26 Hitachi Ltd Manufacture of semiconductor device
JPS59130426A (en) * 1983-01-17 1984-07-27 Toshiba Corp Manufacture of semiconductor device
JPS60239017A (en) * 1984-05-11 1985-11-27 Seiko Instr & Electronics Ltd Manufacture of semiconductor device

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