JPS56157025A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS56157025A
JPS56157025A JP6018280A JP6018280A JPS56157025A JP S56157025 A JPS56157025 A JP S56157025A JP 6018280 A JP6018280 A JP 6018280A JP 6018280 A JP6018280 A JP 6018280A JP S56157025 A JPS56157025 A JP S56157025A
Authority
JP
Japan
Prior art keywords
film
contact hole
etching
sectional shape
angle
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6018280A
Other languages
Japanese (ja)
Inventor
Hiroshi Ishioka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP6018280A priority Critical patent/JPS56157025A/en
Publication of JPS56157025A publication Critical patent/JPS56157025A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
    • H01L21/76804—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics by forming tapered via holes

Abstract

PURPOSE:To form the angle-cut contact hole in a sectional shape by a method wherein an isotropic etching is performed on the substance film provided on a semiconductor substrate and then an anisotripic etching is performed. CONSTITUTION:A thermal oxide film 3 and a CVDPSG film 4 are successively formed on the Si substrate having a diffusion layer on the surface, and a contact hole is formed by firstly performing an isotropic etching and then performing an anisotropic etching using a photoresist film 5 as a mask. Through these procedures, the angle-cut contact hole in the sectional shape is formed and the breaking of wire on a wiring layer can be prevented. Further, said section can be made more smoothly by performing a heat treatment and a glass frow on the PSG film 4.
JP6018280A 1980-05-07 1980-05-07 Manufacture of semiconductor device Pending JPS56157025A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6018280A JPS56157025A (en) 1980-05-07 1980-05-07 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6018280A JPS56157025A (en) 1980-05-07 1980-05-07 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS56157025A true JPS56157025A (en) 1981-12-04

Family

ID=13134754

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6018280A Pending JPS56157025A (en) 1980-05-07 1980-05-07 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS56157025A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5923876A (en) * 1982-07-28 1984-02-07 Hitachi Ltd Etching method
JPS5972138A (en) * 1982-10-19 1984-04-24 Toshiba Corp Manufacture of semiconductor device
JPS59200420A (en) * 1983-04-28 1984-11-13 Oki Electric Ind Co Ltd Manufacture of semiconductor device
JPS6243133A (en) * 1985-08-20 1987-02-25 Mitsubishi Electric Corp Manufacture of semiconductor device

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5487172A (en) * 1977-12-23 1979-07-11 Hitachi Ltd Manufacture for simiconductor device
JPS5687666A (en) * 1979-12-20 1981-07-16 Toshiba Corp Plasma etching method
JPS5690525A (en) * 1979-11-28 1981-07-22 Fujitsu Ltd Manufacture of semiconductor device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5487172A (en) * 1977-12-23 1979-07-11 Hitachi Ltd Manufacture for simiconductor device
JPS5690525A (en) * 1979-11-28 1981-07-22 Fujitsu Ltd Manufacture of semiconductor device
JPS5687666A (en) * 1979-12-20 1981-07-16 Toshiba Corp Plasma etching method

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5923876A (en) * 1982-07-28 1984-02-07 Hitachi Ltd Etching method
JPS6214636B2 (en) * 1982-07-28 1987-04-03 Hitachi Ltd
JPS5972138A (en) * 1982-10-19 1984-04-24 Toshiba Corp Manufacture of semiconductor device
JPS59200420A (en) * 1983-04-28 1984-11-13 Oki Electric Ind Co Ltd Manufacture of semiconductor device
JPS6243133A (en) * 1985-08-20 1987-02-25 Mitsubishi Electric Corp Manufacture of semiconductor device
JPH051977B2 (en) * 1985-08-20 1993-01-11 Mitsubishi Electric Corp

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