JPS5789223A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5789223A
JPS5789223A JP16550780A JP16550780A JPS5789223A JP S5789223 A JPS5789223 A JP S5789223A JP 16550780 A JP16550780 A JP 16550780A JP 16550780 A JP16550780 A JP 16550780A JP S5789223 A JPS5789223 A JP S5789223A
Authority
JP
Japan
Prior art keywords
film
etching device
resist
etched
insulating film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16550780A
Other languages
Japanese (ja)
Inventor
Toshiaki Ogata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Suwa Seikosha KK
Original Assignee
Seiko Epson Corp
Suwa Seikosha KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp, Suwa Seikosha KK filed Critical Seiko Epson Corp
Priority to JP16550780A priority Critical patent/JPS5789223A/en
Publication of JPS5789223A publication Critical patent/JPS5789223A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE:To prevent the disconnection of a wiring metal film, by etching with decompressed hydrogen fluoride gas with a resist film remaining, after opening a contact hole with a parallel plate plasma etching device or an ion beam etching device. CONSTITUTION:An insulating film 2 and a photoresist film 1 formed on a semiconductor substrate 3 are etched with a parallel plate plasma etching device or an ion beam etching device. The resist film is sticked and etched with decompressed hydrogen fluoride gas. An insulating film 5 is etched under the resist and around the rim of the resist pattern. This makes a contact hole top rounded off as illustrated in the figure, and prevents the disconnection of a wiring metal film 6 formed on the insulating film 2 by evaporation.
JP16550780A 1980-11-25 1980-11-25 Manufacture of semiconductor device Pending JPS5789223A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16550780A JPS5789223A (en) 1980-11-25 1980-11-25 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16550780A JPS5789223A (en) 1980-11-25 1980-11-25 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5789223A true JPS5789223A (en) 1982-06-03

Family

ID=15813700

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16550780A Pending JPS5789223A (en) 1980-11-25 1980-11-25 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5789223A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60261141A (en) * 1984-06-07 1985-12-24 Rohm Co Ltd Semiconductor device and manufacture thereof
KR100265754B1 (en) * 1997-04-22 2000-10-02 윤종용 A method for manufacturing for a void free semiconductor device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5432269A (en) * 1977-08-18 1979-03-09 Toshiba Corp Manufacture for semiconductor device
JPS5487172A (en) * 1977-12-23 1979-07-11 Hitachi Ltd Manufacture for simiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5432269A (en) * 1977-08-18 1979-03-09 Toshiba Corp Manufacture for semiconductor device
JPS5487172A (en) * 1977-12-23 1979-07-11 Hitachi Ltd Manufacture for simiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60261141A (en) * 1984-06-07 1985-12-24 Rohm Co Ltd Semiconductor device and manufacture thereof
KR100265754B1 (en) * 1997-04-22 2000-10-02 윤종용 A method for manufacturing for a void free semiconductor device

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