JPS6441239A - Thin film manufacturing equipment and manufacture of metallic wiring thereby - Google Patents

Thin film manufacturing equipment and manufacture of metallic wiring thereby

Info

Publication number
JPS6441239A
JPS6441239A JP19748087A JP19748087A JPS6441239A JP S6441239 A JPS6441239 A JP S6441239A JP 19748087 A JP19748087 A JP 19748087A JP 19748087 A JP19748087 A JP 19748087A JP S6441239 A JPS6441239 A JP S6441239A
Authority
JP
Japan
Prior art keywords
metallic wiring
thin film
ion beam
semiconductor substrate
cluster ion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP19748087A
Other languages
Japanese (ja)
Other versions
JPH0750705B2 (en
Inventor
Norimasa Nagata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP62197480A priority Critical patent/JPH0750705B2/en
Publication of JPS6441239A publication Critical patent/JPS6441239A/en
Publication of JPH0750705B2 publication Critical patent/JPH0750705B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Landscapes

  • Physical Vapour Deposition (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)

Abstract

PURPOSE:To extremely improve coating of a metallic wiring thin film of a side wall of fine contact hole of semiconductor equipment by converging a cluster ion beam on a spot of a small diameter and by forming a thin film by projecting it locally to a semiconductor substrate. CONSTITUTION:As for a metallic wiring with a step, an opening is provided at a layer insulating film 15 on a semiconductor substrate 1 and a cluster ion beam 8 is focused into this opening and a metallic wiring material is buried. Thereafter, a metallic wiring 20 is formed on the layer insulating film which includes the metallic wiring material and the metallic wiring which has perfect coating characteristics is formed by providing a contact with the metallic wiring material. A recess is provided in a resist mask 18 on the semiconductor substrate and the metallic wiring material is buried converging the cluster ion beam 8 thereon, then the resist mask 18 is eliminated to acquire a wiring with an ideal cross sectional contour.
JP62197480A 1987-08-06 1987-08-06 Thin film manufacturing apparatus and method for manufacturing metal wiring using the same Expired - Lifetime JPH0750705B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62197480A JPH0750705B2 (en) 1987-08-06 1987-08-06 Thin film manufacturing apparatus and method for manufacturing metal wiring using the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62197480A JPH0750705B2 (en) 1987-08-06 1987-08-06 Thin film manufacturing apparatus and method for manufacturing metal wiring using the same

Publications (2)

Publication Number Publication Date
JPS6441239A true JPS6441239A (en) 1989-02-13
JPH0750705B2 JPH0750705B2 (en) 1995-05-31

Family

ID=16375178

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62197480A Expired - Lifetime JPH0750705B2 (en) 1987-08-06 1987-08-06 Thin film manufacturing apparatus and method for manufacturing metal wiring using the same

Country Status (1)

Country Link
JP (1) JPH0750705B2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6331227B1 (en) 1999-12-14 2001-12-18 Epion Corporation Enhanced etching/smoothing of dielectric surfaces
JP2016511533A (en) * 2012-12-31 2016-04-14 エフ・イ−・アイ・カンパニー Material adhesion in high aspect ratio structures
CN111636050A (en) * 2020-06-05 2020-09-08 合肥工业大学 Manufacturing method of micropore inner wall conducting layer

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61145846A (en) * 1984-12-19 1986-07-03 Mitsubishi Electric Corp Manufacture of semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61145846A (en) * 1984-12-19 1986-07-03 Mitsubishi Electric Corp Manufacture of semiconductor device

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6331227B1 (en) 1999-12-14 2001-12-18 Epion Corporation Enhanced etching/smoothing of dielectric surfaces
WO2001048794A3 (en) * 1999-12-14 2002-01-03 Epion Corp Enhanced etching/smoothing of dielectric surfaces
EP1247433A2 (en) * 1999-12-14 2002-10-09 Epion Corporation Enhanced etching/smoothing of dielectric surfaces
EP1247433A4 (en) * 1999-12-14 2007-02-28 Epion Corp Enhanced etching/smoothing of dielectric surfaces
JP2016511533A (en) * 2012-12-31 2016-04-14 エフ・イ−・アイ・カンパニー Material adhesion in high aspect ratio structures
CN111636050A (en) * 2020-06-05 2020-09-08 合肥工业大学 Manufacturing method of micropore inner wall conducting layer
CN111636050B (en) * 2020-06-05 2022-08-09 合肥工业大学 Manufacturing method of micropore inner wall conducting layer

Also Published As

Publication number Publication date
JPH0750705B2 (en) 1995-05-31

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