JPS6441239A - Thin film manufacturing equipment and manufacture of metallic wiring thereby - Google Patents
Thin film manufacturing equipment and manufacture of metallic wiring therebyInfo
- Publication number
- JPS6441239A JPS6441239A JP19748087A JP19748087A JPS6441239A JP S6441239 A JPS6441239 A JP S6441239A JP 19748087 A JP19748087 A JP 19748087A JP 19748087 A JP19748087 A JP 19748087A JP S6441239 A JPS6441239 A JP S6441239A
- Authority
- JP
- Japan
- Prior art keywords
- metallic wiring
- thin film
- ion beam
- semiconductor substrate
- cluster ion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Physical Vapour Deposition (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Abstract
PURPOSE:To extremely improve coating of a metallic wiring thin film of a side wall of fine contact hole of semiconductor equipment by converging a cluster ion beam on a spot of a small diameter and by forming a thin film by projecting it locally to a semiconductor substrate. CONSTITUTION:As for a metallic wiring with a step, an opening is provided at a layer insulating film 15 on a semiconductor substrate 1 and a cluster ion beam 8 is focused into this opening and a metallic wiring material is buried. Thereafter, a metallic wiring 20 is formed on the layer insulating film which includes the metallic wiring material and the metallic wiring which has perfect coating characteristics is formed by providing a contact with the metallic wiring material. A recess is provided in a resist mask 18 on the semiconductor substrate and the metallic wiring material is buried converging the cluster ion beam 8 thereon, then the resist mask 18 is eliminated to acquire a wiring with an ideal cross sectional contour.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62197480A JPH0750705B2 (en) | 1987-08-06 | 1987-08-06 | Thin film manufacturing apparatus and method for manufacturing metal wiring using the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62197480A JPH0750705B2 (en) | 1987-08-06 | 1987-08-06 | Thin film manufacturing apparatus and method for manufacturing metal wiring using the same |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6441239A true JPS6441239A (en) | 1989-02-13 |
JPH0750705B2 JPH0750705B2 (en) | 1995-05-31 |
Family
ID=16375178
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62197480A Expired - Lifetime JPH0750705B2 (en) | 1987-08-06 | 1987-08-06 | Thin film manufacturing apparatus and method for manufacturing metal wiring using the same |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0750705B2 (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6331227B1 (en) | 1999-12-14 | 2001-12-18 | Epion Corporation | Enhanced etching/smoothing of dielectric surfaces |
JP2016511533A (en) * | 2012-12-31 | 2016-04-14 | エフ・イ−・アイ・カンパニー | Material adhesion in high aspect ratio structures |
CN111636050A (en) * | 2020-06-05 | 2020-09-08 | 合肥工业大学 | Manufacturing method of micropore inner wall conducting layer |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61145846A (en) * | 1984-12-19 | 1986-07-03 | Mitsubishi Electric Corp | Manufacture of semiconductor device |
-
1987
- 1987-08-06 JP JP62197480A patent/JPH0750705B2/en not_active Expired - Lifetime
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61145846A (en) * | 1984-12-19 | 1986-07-03 | Mitsubishi Electric Corp | Manufacture of semiconductor device |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6331227B1 (en) | 1999-12-14 | 2001-12-18 | Epion Corporation | Enhanced etching/smoothing of dielectric surfaces |
WO2001048794A3 (en) * | 1999-12-14 | 2002-01-03 | Epion Corp | Enhanced etching/smoothing of dielectric surfaces |
EP1247433A2 (en) * | 1999-12-14 | 2002-10-09 | Epion Corporation | Enhanced etching/smoothing of dielectric surfaces |
EP1247433A4 (en) * | 1999-12-14 | 2007-02-28 | Epion Corp | Enhanced etching/smoothing of dielectric surfaces |
JP2016511533A (en) * | 2012-12-31 | 2016-04-14 | エフ・イ−・アイ・カンパニー | Material adhesion in high aspect ratio structures |
CN111636050A (en) * | 2020-06-05 | 2020-09-08 | 合肥工业大学 | Manufacturing method of micropore inner wall conducting layer |
CN111636050B (en) * | 2020-06-05 | 2022-08-09 | 合肥工业大学 | Manufacturing method of micropore inner wall conducting layer |
Also Published As
Publication number | Publication date |
---|---|
JPH0750705B2 (en) | 1995-05-31 |
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