JPS5772350A - Fabrication of semiconductor device - Google Patents
Fabrication of semiconductor deviceInfo
- Publication number
- JPS5772350A JPS5772350A JP14894080A JP14894080A JPS5772350A JP S5772350 A JPS5772350 A JP S5772350A JP 14894080 A JP14894080 A JP 14894080A JP 14894080 A JP14894080 A JP 14894080A JP S5772350 A JPS5772350 A JP S5772350A
- Authority
- JP
- Japan
- Prior art keywords
- electrode layer
- electrode
- oxide
- metal ions
- free energy
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76897—Formation of self-aligned vias or contact plugs, i.e. involving a lithographically uncritical step
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
PURPOSE:To securely hold the surface of a contact hole part of No.1 electrode layer by a method wherein surface treatment is carried out with a standard electrode potential and a fluid including metal ions selected from the viewpoint of free energy forming an oxide. CONSTITUTION:No.2 insulating layer 24 is formed after No.1 electrode layer 23 is deposited via No.1 insulating layer 22 on a semiconductor substrate 21. A contact hole 25 is etched away and its surface is treated, and then No.2 electrode layer 26 which contacts No.1 electrode layer 23 is built. At this moment, its surface treatment is carried out with a fluid that a single electrode potential is noble compared with a material of No.1 electrode layer 23 and yet metal ions of which free energy for forming an oxide is small are included. With this process, good reproducibility and high production yield is gained in connection of No.1 and No.2 electrode layers through the fine hole 25.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14894080A JPS5772350A (en) | 1980-10-24 | 1980-10-24 | Fabrication of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14894080A JPS5772350A (en) | 1980-10-24 | 1980-10-24 | Fabrication of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5772350A true JPS5772350A (en) | 1982-05-06 |
Family
ID=15464057
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP14894080A Pending JPS5772350A (en) | 1980-10-24 | 1980-10-24 | Fabrication of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5772350A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH025418A (en) * | 1988-06-23 | 1990-01-10 | Toshiba Corp | Surface treatment of metal film and selective deposition of metal film |
US7763536B2 (en) | 2005-06-21 | 2010-07-27 | Seiko Epson Corporation | Method of manufacturing a semiconductor device |
-
1980
- 1980-10-24 JP JP14894080A patent/JPS5772350A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH025418A (en) * | 1988-06-23 | 1990-01-10 | Toshiba Corp | Surface treatment of metal film and selective deposition of metal film |
US7763536B2 (en) | 2005-06-21 | 2010-07-27 | Seiko Epson Corporation | Method of manufacturing a semiconductor device |
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