JPS5750478A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS5750478A JPS5750478A JP12669780A JP12669780A JPS5750478A JP S5750478 A JPS5750478 A JP S5750478A JP 12669780 A JP12669780 A JP 12669780A JP 12669780 A JP12669780 A JP 12669780A JP S5750478 A JPS5750478 A JP S5750478A
- Authority
- JP
- Japan
- Prior art keywords
- photoresist
- etched
- mask
- gate
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- 229920002120 photoresistant polymer Polymers 0.000 abstract 5
- 239000002184 metal Substances 0.000 abstract 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 2
- 238000010438 heat treatment Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
PURPOSE:To increase the dielectric strength of a drain, by a method wherein, after a part of an active region is etched with a gate metal and photoresist as a mask, the gate metal is side-etched with photoresist as a mask to deposit an electrode metal on the surface. CONSTITUTION:After a GaAs active layer is provided on the surface of a semi- insulating GaAs substrate 21 via a buffer layer 22, an Al electrode 25 is deposited to reduce the surface to a pattern by utilizing photoresist 26. Then the surface of the active layer is etched with the gate electrode that has been reduced to a pattern as a mask to form steps. With the photoresist 26 as a mask, the gate electrode is side- etched to allow the gate to have specified length, and an AuGePt layer 27 is provided. After the photoresist is removed, source and drain electrodes are provided by means of heat treatment. By so doing, because the source and drain electrodes are formed in such a way that they have been buried in the active layer, the dielectric strength of the drain can be improved.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12669780A JPS5750478A (en) | 1980-09-12 | 1980-09-12 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12669780A JPS5750478A (en) | 1980-09-12 | 1980-09-12 | Manufacture of semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5750478A true JPS5750478A (en) | 1982-03-24 |
JPS6239834B2 JPS6239834B2 (en) | 1987-08-25 |
Family
ID=14941602
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP12669780A Granted JPS5750478A (en) | 1980-09-12 | 1980-09-12 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5750478A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60263479A (en) * | 1984-06-12 | 1985-12-26 | Nec Corp | Manufacture of semiconductor device |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6248437U (en) * | 1985-09-10 | 1987-03-25 | ||
JPH03115044U (en) * | 1990-03-09 | 1991-11-27 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS51151571U (en) * | 1975-05-27 | 1976-12-03 | ||
JPS52109375A (en) * | 1976-03-10 | 1977-09-13 | Nec Corp | Manufacture of junction gate type field effect transistor |
-
1980
- 1980-09-12 JP JP12669780A patent/JPS5750478A/en active Granted
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS51151571U (en) * | 1975-05-27 | 1976-12-03 | ||
JPS52109375A (en) * | 1976-03-10 | 1977-09-13 | Nec Corp | Manufacture of junction gate type field effect transistor |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60263479A (en) * | 1984-06-12 | 1985-12-26 | Nec Corp | Manufacture of semiconductor device |
Also Published As
Publication number | Publication date |
---|---|
JPS6239834B2 (en) | 1987-08-25 |
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