JPS5737850A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5737850A
JPS5737850A JP11456480A JP11456480A JPS5737850A JP S5737850 A JPS5737850 A JP S5737850A JP 11456480 A JP11456480 A JP 11456480A JP 11456480 A JP11456480 A JP 11456480A JP S5737850 A JPS5737850 A JP S5737850A
Authority
JP
Japan
Prior art keywords
layer
regions
deposited
oxide film
single crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11456480A
Other languages
Japanese (ja)
Inventor
Takeshi Konuma
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP11456480A priority Critical patent/JPS5737850A/en
Publication of JPS5737850A publication Critical patent/JPS5737850A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76243—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using silicon implanted buried insulating layers, e.g. oxide layers, i.e. SIMOX techniques

Abstract

PURPOSE:To decrease parasitic capacity, etc., and to improve the perfomance of an IC by a method wherein an island region surrounded by an insulating layer is formed on a substrate through ion injection, a semiconductor thin-layer is deposited on the surface, and the deposited layer is recrystallized through annealing by lasers. CONSTITUTION:An oxide film 2 is shaped to the Si substrate, the oxide film 2 is etched selectively and openings 3, side surfaces thereof have tapers, are formed. Oxygen ions 4 are injected, and injection layers 5 are shaped so as to surround regions 1'. The Si layer 6 is deposited on the surface, the Si layer 6 is irradiated by ruby lasers, and a polycrystal Si layer on the oxide film 2 is changed into a single crystal while the crystallinity of the single crystal layer on the regions 1' is improved. The injection layers 5 are converted into oxidation layers 5' at this treatment stage. An IC device is prepared in the Si single crystal region through a normal process. Accordingly, the circuit in which parasitic capacity, junction leakage, etc. are decreased can be prepared because the island regions, bottom regions thereof are separated by insulators, can be formed.
JP11456480A 1980-08-19 1980-08-19 Manufacture of semiconductor device Pending JPS5737850A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11456480A JPS5737850A (en) 1980-08-19 1980-08-19 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11456480A JPS5737850A (en) 1980-08-19 1980-08-19 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5737850A true JPS5737850A (en) 1982-03-02

Family

ID=14640965

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11456480A Pending JPS5737850A (en) 1980-08-19 1980-08-19 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5737850A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61264717A (en) * 1985-05-20 1986-11-22 Matsushita Electronics Corp Manufacture of semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61264717A (en) * 1985-05-20 1986-11-22 Matsushita Electronics Corp Manufacture of semiconductor device

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