JPS5768077A - Manufacture of schottky gate type field effect transistor - Google Patents

Manufacture of schottky gate type field effect transistor

Info

Publication number
JPS5768077A
JPS5768077A JP14503080A JP14503080A JPS5768077A JP S5768077 A JPS5768077 A JP S5768077A JP 14503080 A JP14503080 A JP 14503080A JP 14503080 A JP14503080 A JP 14503080A JP S5768077 A JPS5768077 A JP S5768077A
Authority
JP
Japan
Prior art keywords
ions
type
layer
gate type
schottky gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14503080A
Other languages
Japanese (ja)
Inventor
Kimiyoshi Yamazaki
Kazuyoshi Asai
Masayuki Ino
Katsuhiko Kurumada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP14503080A priority Critical patent/JPS5768077A/en
Publication of JPS5768077A publication Critical patent/JPS5768077A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • H01L29/812—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a Schottky gate

Abstract

PURPOSE:To obtain a Schottky gate type FET by etching the N type layer of a high resistance semiconductor substrate surface into two segments, injecting N type ions, connecting both segments, and forming a channel region. CONSTITUTION:Si ions are injected to a high resistance GaAs substrte 21 to form an N type layer 23, an Si3N4 film 28 is formed, is opened, Ar ions are obliquely implanted, the substrate 21 is rotated to each it in trapezoidal shape, and is divided into N type layers 31, 32. Si ions are again implanted to form an N type layer 33, and a continuous layer 34 is formed. An Si3N4 film 35 is covered thereon, is heat treated to form activated layers 36-38. The film 35 is removed, holes 40, 41 are opened, ohmic electrodes 42, 43 are attached, aluminum electrode 44 is attached to form a Schottky junction 45 completely. Since the layer 38 is formed by ion implantation, it can be formed in desired thickness readily, and an FET having the predetermined characteristics can be obtained.
JP14503080A 1980-10-15 1980-10-15 Manufacture of schottky gate type field effect transistor Pending JPS5768077A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14503080A JPS5768077A (en) 1980-10-15 1980-10-15 Manufacture of schottky gate type field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14503080A JPS5768077A (en) 1980-10-15 1980-10-15 Manufacture of schottky gate type field effect transistor

Publications (1)

Publication Number Publication Date
JPS5768077A true JPS5768077A (en) 1982-04-26

Family

ID=15375781

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14503080A Pending JPS5768077A (en) 1980-10-15 1980-10-15 Manufacture of schottky gate type field effect transistor

Country Status (1)

Country Link
JP (1) JPS5768077A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59207669A (en) * 1983-05-10 1984-11-24 Mitsubishi Electric Corp Manufacture of field effect transistor
JP2008132832A (en) * 2006-11-27 2008-06-12 Isuzu Motors Ltd Cab lock mechanism for vehicle

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59207669A (en) * 1983-05-10 1984-11-24 Mitsubishi Electric Corp Manufacture of field effect transistor
JPS6332273B2 (en) * 1983-05-10 1988-06-29 Mitsubishi Electric Corp
JP2008132832A (en) * 2006-11-27 2008-06-12 Isuzu Motors Ltd Cab lock mechanism for vehicle

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