JPS57177571A - Field effect transistor and manufacture thereof - Google Patents

Field effect transistor and manufacture thereof

Info

Publication number
JPS57177571A
JPS57177571A JP6299981A JP6299981A JPS57177571A JP S57177571 A JPS57177571 A JP S57177571A JP 6299981 A JP6299981 A JP 6299981A JP 6299981 A JP6299981 A JP 6299981A JP S57177571 A JPS57177571 A JP S57177571A
Authority
JP
Japan
Prior art keywords
layer
operating
gate
mask
adhered
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6299981A
Other languages
Japanese (ja)
Other versions
JPS6336151B2 (en
Inventor
Kenichi Kikuchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Priority to JP6299981A priority Critical patent/JPS57177571A/en
Priority to US06/342,912 priority patent/US4694563A/en
Priority to EP82300499A priority patent/EP0057605B1/en
Priority to CA000395215A priority patent/CA1187206A/en
Priority to DE8282300499T priority patent/DE3273695D1/en
Publication of JPS57177571A publication Critical patent/JPS57177571A/en
Publication of JPS6336151B2 publication Critical patent/JPS6336151B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66848—Unipolar field-effect transistors with a Schottky gate, i.e. MESFET
    • H01L29/66856—Unipolar field-effect transistors with a Schottky gate, i.e. MESFET with an active layer made of a group 13/15 material
    • H01L29/66863—Lateral single gate transistors
    • H01L29/66871—Processes wherein the final gate is made after the formation of the source and drain regions in the active layer, e.g. dummy-gate processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1025—Channel region of field-effect devices
    • H01L29/1029—Channel region of field-effect devices of field-effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/47—Schottky barrier electrodes
    • H01L29/475—Schottky barrier electrodes on AIII-BV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66848—Unipolar field-effect transistors with a Schottky gate, i.e. MESFET
    • H01L29/66856—Unipolar field-effect transistors with a Schottky gate, i.e. MESFET with an active layer made of a group 13/15 material
    • H01L29/66863—Lateral single gate transistors
    • H01L29/66878—Processes wherein the final gate is made before the formation, e.g. activation anneal, of the source and drain regions in the active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • H01L29/812—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a Schottky gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Bipolar Transistors (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE:To reduce parasitic resistance or enhance mutual conductance for an FET with good high frequency characteristic, by forming a short operating layer of a gate layer, deep operating layer between a gate source and operating layer between a gate drain by ion implantation method. CONSTITUTION:On the surface of a semiconductor substrate 1 which has high resistivity or semi-insulation character, one conductive semiconductive layer 16 is epitaxial-grown in a liquid or vapor phase with the thickness and carrier density specified for desired pinch-off voltage. Next, an injection mask 17 constituted of a stripe-shaped photoresist is provided on the center of the surface thereof to deeply implant impurity ion of the same conductive type as the layer 16 for the formation of an operating layers 12 and 13 at deep positions. Thereafter, Al metallic films 18 and 20 are adhered on the layer 16 including the operating layers 12 and 13 with the mask 17 existing to remove the mask 17 together with the Al meatallic film 19 adhered thereon. Subsequently, inverse conductive type ion is shallowly implanted from oblique direction into the exposed layer 16, i.e. the main operating layer 11 to form a gate region 21.
JP6299981A 1981-01-29 1981-04-24 Field effect transistor and manufacture thereof Granted JPS57177571A (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP6299981A JPS57177571A (en) 1981-04-24 1981-04-24 Field effect transistor and manufacture thereof
US06/342,912 US4694563A (en) 1981-01-29 1982-01-26 Process for making Schottky-barrier gate FET
EP82300499A EP0057605B1 (en) 1981-01-29 1982-01-29 A schottky-barrier gate field effect transistor and a process for the production of the same
CA000395215A CA1187206A (en) 1981-01-29 1982-01-29 Schottky-barrier gate field effect transistor and a process for the production of the same
DE8282300499T DE3273695D1 (en) 1981-01-29 1982-01-29 A schottky-barrier gate field effect transistor and a process for the production of the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6299981A JPS57177571A (en) 1981-04-24 1981-04-24 Field effect transistor and manufacture thereof

Publications (2)

Publication Number Publication Date
JPS57177571A true JPS57177571A (en) 1982-11-01
JPS6336151B2 JPS6336151B2 (en) 1988-07-19

Family

ID=13216579

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6299981A Granted JPS57177571A (en) 1981-01-29 1981-04-24 Field effect transistor and manufacture thereof

Country Status (1)

Country Link
JP (1) JPS57177571A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60241271A (en) * 1984-05-16 1985-11-30 Nec Corp Schottky type fet

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS535581A (en) * 1976-07-06 1978-01-19 Toshiba Corp Schottky gate type field effect transistor

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS535581A (en) * 1976-07-06 1978-01-19 Toshiba Corp Schottky gate type field effect transistor

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60241271A (en) * 1984-05-16 1985-11-30 Nec Corp Schottky type fet
JPH043102B2 (en) * 1984-05-16 1992-01-22

Also Published As

Publication number Publication date
JPS6336151B2 (en) 1988-07-19

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