JPS5721824A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5721824A
JPS5721824A JP9607580A JP9607580A JPS5721824A JP S5721824 A JPS5721824 A JP S5721824A JP 9607580 A JP9607580 A JP 9607580A JP 9607580 A JP9607580 A JP 9607580A JP S5721824 A JPS5721824 A JP S5721824A
Authority
JP
Japan
Prior art keywords
layer
protective film
compound semiconductor
injected
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9607580A
Other languages
Japanese (ja)
Other versions
JPS634345B2 (en
Inventor
Hidetoshi Nishi
Sukehisa Hiyamizu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP9607580A priority Critical patent/JPS5721824A/en
Publication of JPS5721824A publication Critical patent/JPS5721824A/en
Publication of JPS634345B2 publication Critical patent/JPS634345B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Led Devices (AREA)
  • Formation Of Insulating Films (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To improve the electric characteristics by forming compound semiconductor protective film of different etching properties on a compound semiconductor layer formed on a compound semiconductor substrate, forming an ion injected region through the protective film and heat treating it to remove rhe protective film. CONSTITUTION:A high resistance GaGs layer 2 is grown by 1mum on a semiinsulating substrate 1, and Ga0.5Al0.5As layer protective film 3 is continuously grown by 0.2mum thereon. Si ions are injected through the later 3 to the layer 2 to form an injection region 5. Then, it is heat treated to activate the ion injected layer 5 to form an active layer 5'. The layer 3 is etched and removed to form a source 6, drain 8 and gate 7 electrodes. Thus, the compound semiconductor having excellent electric properties can be obtained.
JP9607580A 1980-07-14 1980-07-14 Manufacture of semiconductor device Granted JPS5721824A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9607580A JPS5721824A (en) 1980-07-14 1980-07-14 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9607580A JPS5721824A (en) 1980-07-14 1980-07-14 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5721824A true JPS5721824A (en) 1982-02-04
JPS634345B2 JPS634345B2 (en) 1988-01-28

Family

ID=14155276

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9607580A Granted JPS5721824A (en) 1980-07-14 1980-07-14 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5721824A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5974901U (en) * 1982-11-11 1984-05-21 小片　進 Garbage storage container equipped with continuous bags
JPS59149023A (en) * 1983-02-16 1984-08-25 Nec Corp Method for introduction of impurity into semiconductor
JPS60250622A (en) * 1984-05-25 1985-12-11 Nec Corp Impurity introducing method
JPH01231317A (en) * 1988-03-11 1989-09-14 Kokusai Denshin Denwa Co Ltd <Kdd> Manufacture of optical semiconductor element
EP0365875A2 (en) * 1988-10-28 1990-05-02 Texas Instruments Incorporated Capped anneal
JPH04274320A (en) * 1991-03-01 1992-09-30 Nippon Telegr & Teleph Corp <Ntt> Method for forming ion-implantation active layer within gaas substrate

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4736965A (en) * 1971-04-07 1972-11-30
JPS50102260A (en) * 1974-01-07 1975-08-13
JPS52131453A (en) * 1976-04-28 1977-11-04 Hitachi Ltd Thermal treating method for chemical compound semiconductor

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4736965A (en) * 1971-04-07 1972-11-30
JPS50102260A (en) * 1974-01-07 1975-08-13
JPS52131453A (en) * 1976-04-28 1977-11-04 Hitachi Ltd Thermal treating method for chemical compound semiconductor

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5974901U (en) * 1982-11-11 1984-05-21 小片　進 Garbage storage container equipped with continuous bags
JPS59149023A (en) * 1983-02-16 1984-08-25 Nec Corp Method for introduction of impurity into semiconductor
JPS60250622A (en) * 1984-05-25 1985-12-11 Nec Corp Impurity introducing method
JPH01231317A (en) * 1988-03-11 1989-09-14 Kokusai Denshin Denwa Co Ltd <Kdd> Manufacture of optical semiconductor element
JP2686764B2 (en) * 1988-03-11 1997-12-08 国際電信電話株式会社 Method for manufacturing optical semiconductor device
EP0365875A2 (en) * 1988-10-28 1990-05-02 Texas Instruments Incorporated Capped anneal
JPH04274320A (en) * 1991-03-01 1992-09-30 Nippon Telegr & Teleph Corp <Ntt> Method for forming ion-implantation active layer within gaas substrate

Also Published As

Publication number Publication date
JPS634345B2 (en) 1988-01-28

Similar Documents

Publication Publication Date Title
JPS5721824A (en) Manufacture of semiconductor device
JPS5775463A (en) Manufacture of semiconductor device
JPS57130468A (en) Insulating gate protecting semiconductor device
JPS5632742A (en) Manufacture of semiconductor device
JPS5773974A (en) Manufacture of most type semiconductor device
JPS6433970A (en) Field effect semiconductor device
JPS54117691A (en) Production of insulating gate-type semiconductor device
JPS5627936A (en) Semiconductor device and manufacture thereof
JPS5515230A (en) Semiconductor device and its manufacturing method
JPS55107229A (en) Method of manufacturing semiconductor device
JPS5750478A (en) Manufacture of semiconductor device
JPS5637671A (en) Semiconductor device
JPS5550661A (en) Insulated gate type field effect semiconductor device
JPS5768077A (en) Manufacture of schottky gate type field effect transistor
JPS5693370A (en) Manufacture of mos-type semiconductor device
JPS55120170A (en) Mos type semiconductor device
JPS57106123A (en) Manufacture of semiconductor device
JPS56160071A (en) Manufacture of insulated gate type field effect transistor
JPS572579A (en) Manufacture of junction type field effect transistor
JPS56114376A (en) Manufacture of semiconductor device
JPS5613734A (en) Gallium arsenide semiconductor device
JPS5772378A (en) Manufacture of semiconductor device
JPS5769733A (en) Heat treatment of semiconductor substrate
JPS5739579A (en) Mos semiconductor device and manufacture thereof
JPS54148477A (en) Manufacture of semiconductor device