JPS5772378A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5772378A
JPS5772378A JP14877180A JP14877180A JPS5772378A JP S5772378 A JPS5772378 A JP S5772378A JP 14877180 A JP14877180 A JP 14877180A JP 14877180 A JP14877180 A JP 14877180A JP S5772378 A JPS5772378 A JP S5772378A
Authority
JP
Japan
Prior art keywords
insulating film
impurity ions
field insulating
ions
laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14877180A
Other languages
Japanese (ja)
Inventor
Hideto Goto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP14877180A priority Critical patent/JPS5772378A/en
Publication of JPS5772378A publication Critical patent/JPS5772378A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)

Abstract

PURPOSE:To activate impurity ions at a section where laser rays are difficult to be thermally irradiated, and to anneal and decrease an interface level increased through ion injection by injecting impurity ions and executing proper heat treatment just before a laser is irradiated. CONSTITUTION:A field insulating film 12 is formed selectively onto a semiconductor substrate 11, a gate insulating film 13 is shaped to a region surrounded by the field insulating film 12, impurity ions are injected using a gate electrode 14 and the field insulating film 12 as masks, and impurity ion injecting regions 15a, 15b are formed. Ions are activated and the interface level is annealed and decreased by thermally treating the whole in a hydrogen atmosphere having approximately 450 deg.C. Impurity ions are activated by approximately 100% through laser irradiation, and source and drain regions 16a, 16b having sufficiently low layer resistance are obtained.
JP14877180A 1980-10-23 1980-10-23 Manufacture of semiconductor device Pending JPS5772378A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14877180A JPS5772378A (en) 1980-10-23 1980-10-23 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14877180A JPS5772378A (en) 1980-10-23 1980-10-23 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5772378A true JPS5772378A (en) 1982-05-06

Family

ID=15460287

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14877180A Pending JPS5772378A (en) 1980-10-23 1980-10-23 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5772378A (en)

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