JPS5718366A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS5718366A JPS5718366A JP9352780A JP9352780A JPS5718366A JP S5718366 A JPS5718366 A JP S5718366A JP 9352780 A JP9352780 A JP 9352780A JP 9352780 A JP9352780 A JP 9352780A JP S5718366 A JPS5718366 A JP S5718366A
- Authority
- JP
- Japan
- Prior art keywords
- insulating film
- film
- silicon
- semiconductor device
- integration
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 4
- 238000004519 manufacturing process Methods 0.000 title 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 6
- 229910052710 silicon Inorganic materials 0.000 abstract 6
- 239000010703 silicon Substances 0.000 abstract 6
- 238000010438 heat treatment Methods 0.000 abstract 2
- 230000010354 integration Effects 0.000 abstract 2
- 238000002347 injection Methods 0.000 abstract 1
- 239000007924 injection Substances 0.000 abstract 1
- 150000002500 ions Chemical class 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 229910052757 nitrogen Inorganic materials 0.000 abstract 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract 1
- -1 nitrogen ions Chemical class 0.000 abstract 1
- 230000001681 protective effect Effects 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
Abstract
PURPOSE:To enable the integration of a semiconductor device by covering source and drain electrode contacting windows formed in advance by a self-alignment system with nitrided silicon film by an ion injection and a heat treatment, forming an insulating film on the side surface of a silicon gate electrode and removing the nitrided silicon film. CONSTITUTION:A field insulating film 2 and an active region opening 24 are formed by a selective oxide forming method on a one conductive semiconductor substrate, a silicon insulating film formed then is patterned, and a gate insulated film 3, a silicon gate electrode 4 and a protective insulating film 5 are sequentially formed in the opening 2A. Subsequently, nitrogen ions are injected, a heat treatment is then conducted, and nitrided silicon films 6 covering at least source and drain electrode contacting windows are formed. Then, an insulating film 7 is formed on the side surface of the electrode 4, thereafter the film 6 is removed, and the window is exposed. The electrode contacting window is thus formed by a self-alignment system, and the integration of the semiconductor device can be performed.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9352780A JPS5718366A (en) | 1980-07-09 | 1980-07-09 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9352780A JPS5718366A (en) | 1980-07-09 | 1980-07-09 | Manufacture of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5718366A true JPS5718366A (en) | 1982-01-30 |
Family
ID=14084776
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP9352780A Pending JPS5718366A (en) | 1980-07-09 | 1980-07-09 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5718366A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3140654A1 (en) * | 1980-10-17 | 1982-06-24 | Nippon Columbia K.K., Tokyo | CIRCUIT FOR ELIMINATION OF DISTORTION |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5292486A (en) * | 1976-01-30 | 1977-08-03 | Hitachi Ltd | Manufacture of mis-type semiconductor device |
-
1980
- 1980-07-09 JP JP9352780A patent/JPS5718366A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5292486A (en) * | 1976-01-30 | 1977-08-03 | Hitachi Ltd | Manufacture of mis-type semiconductor device |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3140654A1 (en) * | 1980-10-17 | 1982-06-24 | Nippon Columbia K.K., Tokyo | CIRCUIT FOR ELIMINATION OF DISTORTION |
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