JPS56162876A - Manufacture of insulated gate type semiconductor device - Google Patents

Manufacture of insulated gate type semiconductor device

Info

Publication number
JPS56162876A
JPS56162876A JP6074181A JP6074181A JPS56162876A JP S56162876 A JPS56162876 A JP S56162876A JP 6074181 A JP6074181 A JP 6074181A JP 6074181 A JP6074181 A JP 6074181A JP S56162876 A JPS56162876 A JP S56162876A
Authority
JP
Japan
Prior art keywords
electrode
drain
film
source
regions
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6074181A
Other languages
Japanese (ja)
Inventor
Hiroshi Shibata
Tsutomu Yoshihara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP6074181A priority Critical patent/JPS56162876A/en
Publication of JPS56162876A publication Critical patent/JPS56162876A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE:To microminiaturize a pattern by deeply diffusing regions for a source and a drain by using windows for adhering metal for electrode and matching a mask with the same mask, thereby eliminating the size margin. CONSTITUTION:An isolation oxidizing film 3 and a gate insulating film 4 are formed on a semiconductor substrate 2, and a gate electrode 5 is formed. With the electrode 5 as a mask ions are injected to form preliminary regions 11, 12 for source and drain with shallow junction depth by a self-aligning method. A thick oxidized film 8 is covered for protecting the surface, a contacting hole 9 is etched to reach the regions 11, 12. Source 6 and drain 7 having deep junction depth are so formed by ion diffusion through the hole 9 in contact with the film 3. A metal 10 for an electrode is adhered with the hole 9 used for the diffusion to manufacture a silicon gate type FET.
JP6074181A 1981-04-20 1981-04-20 Manufacture of insulated gate type semiconductor device Pending JPS56162876A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6074181A JPS56162876A (en) 1981-04-20 1981-04-20 Manufacture of insulated gate type semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6074181A JPS56162876A (en) 1981-04-20 1981-04-20 Manufacture of insulated gate type semiconductor device

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP98376A Division JPS5284981A (en) 1976-01-06 1976-01-06 Production of insulated gate type semiconductor device

Publications (1)

Publication Number Publication Date
JPS56162876A true JPS56162876A (en) 1981-12-15

Family

ID=13150982

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6074181A Pending JPS56162876A (en) 1981-04-20 1981-04-20 Manufacture of insulated gate type semiconductor device

Country Status (1)

Country Link
JP (1) JPS56162876A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6269559A (en) * 1985-09-24 1987-03-30 Hitachi Ltd Semiconductor device

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50106568A (en) * 1973-12-22 1975-08-22
JPS50120584A (en) * 1974-03-07 1975-09-20
JPS5169985A (en) * 1974-12-16 1976-06-17 Hitachi Ltd Handotaisochino seizohoho

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50106568A (en) * 1973-12-22 1975-08-22
JPS50120584A (en) * 1974-03-07 1975-09-20
JPS5169985A (en) * 1974-12-16 1976-06-17 Hitachi Ltd Handotaisochino seizohoho

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6269559A (en) * 1985-09-24 1987-03-30 Hitachi Ltd Semiconductor device

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