JPS57106076A - Manufacture of semiconductor integrated circuit device - Google Patents

Manufacture of semiconductor integrated circuit device

Info

Publication number
JPS57106076A
JPS57106076A JP18174780A JP18174780A JPS57106076A JP S57106076 A JPS57106076 A JP S57106076A JP 18174780 A JP18174780 A JP 18174780A JP 18174780 A JP18174780 A JP 18174780A JP S57106076 A JPS57106076 A JP S57106076A
Authority
JP
Japan
Prior art keywords
film
source
drain
gate
manufacture
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP18174780A
Other languages
Japanese (ja)
Other versions
JPS6160590B2 (en
Inventor
Toshio Kano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Suwa Seikosha KK
Original Assignee
Seiko Epson Corp
Suwa Seikosha KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp, Suwa Seikosha KK filed Critical Seiko Epson Corp
Priority to JP18174780A priority Critical patent/JPS57106076A/en
Publication of JPS57106076A publication Critical patent/JPS57106076A/en
Publication of JPS6160590B2 publication Critical patent/JPS6160590B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate

Abstract

PURPOSE:To enable the improvement of the degree of integration, by a method wherein a source.drain area can be reduced sharply. CONSTITUTION:A gate oxidized film 8 and a multicrystal Si film 9 forming a gate electrode are formed in order on a surface of an Si substrate 7. The film 9 is then processed in the shape of a gate electrode by a photoetching and a nitrided Si film 10 is formed on the upper part and the side of the film 9. Then, an LOCOS oxidation takes place to form a field oxidized film 11. The film 11 is then lightly etched to expose a part of the substrate 7 in the proximity of a gate. At that time, only a part, which will form a source.drain, is removed by photoetching instead of a whole light etching. A diffusion layer 12 and an electrode 13 are then formed by diffusion or ion-implanting. This permits the formation of the source.drain having a very small area.
JP18174780A 1980-12-22 1980-12-22 Manufacture of semiconductor integrated circuit device Granted JPS57106076A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18174780A JPS57106076A (en) 1980-12-22 1980-12-22 Manufacture of semiconductor integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18174780A JPS57106076A (en) 1980-12-22 1980-12-22 Manufacture of semiconductor integrated circuit device

Publications (2)

Publication Number Publication Date
JPS57106076A true JPS57106076A (en) 1982-07-01
JPS6160590B2 JPS6160590B2 (en) 1986-12-22

Family

ID=16106170

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18174780A Granted JPS57106076A (en) 1980-12-22 1980-12-22 Manufacture of semiconductor integrated circuit device

Country Status (1)

Country Link
JP (1) JPS57106076A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0582777A (en) * 1991-09-24 1993-04-02 Nec Corp Mos type field effect transistor and its manufacture
CN100428426C (en) * 2004-03-11 2008-10-22 茂德科技股份有限公司 Structure of metal-oxide-semiconductor transistor and process for forming same

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0582777A (en) * 1991-09-24 1993-04-02 Nec Corp Mos type field effect transistor and its manufacture
CN100428426C (en) * 2004-03-11 2008-10-22 茂德科技股份有限公司 Structure of metal-oxide-semiconductor transistor and process for forming same

Also Published As

Publication number Publication date
JPS6160590B2 (en) 1986-12-22

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