JPS57106077A - Manufacture of semiconductor integrated circuit device - Google Patents

Manufacture of semiconductor integrated circuit device

Info

Publication number
JPS57106077A
JPS57106077A JP18174880A JP18174880A JPS57106077A JP S57106077 A JPS57106077 A JP S57106077A JP 18174880 A JP18174880 A JP 18174880A JP 18174880 A JP18174880 A JP 18174880A JP S57106077 A JPS57106077 A JP S57106077A
Authority
JP
Japan
Prior art keywords
film
etched
manufacture
integrated circuit
semiconductor integrated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP18174880A
Other languages
Japanese (ja)
Inventor
Toshio Kano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Suwa Seikosha KK
Original Assignee
Seiko Epson Corp
Suwa Seikosha KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp, Suwa Seikosha KK filed Critical Seiko Epson Corp
Priority to JP18174880A priority Critical patent/JPS57106077A/en
Publication of JPS57106077A publication Critical patent/JPS57106077A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate

Abstract

PURPOSE:To improve the degree of integration, by a method wherein an area of a diffusion layer itself can be equalized to a contact hole. CONSTITUTION:After an LOCOS oxidized film 8 is formed on a surface of an Si substrate 7, a gate oxidized film 9 and a multicrystal Si film 10 are laminated. Then, after impurity is diffused in the film 10, the film 10 is etched in the shape of a gate electrode by a photo etching. An Si-nitrided film 11 is then formed on the upper and surfaces of the film 10 being so etched. A film 9 except a gate part is then etched for removal, and then, a source.drain diffusion layer 12 is formed by diffusion. With the contact hole as it is, an Al electrode 13 is formed. This formation permits the substantial shortening of a lateral size.
JP18174880A 1980-12-22 1980-12-22 Manufacture of semiconductor integrated circuit device Pending JPS57106077A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18174880A JPS57106077A (en) 1980-12-22 1980-12-22 Manufacture of semiconductor integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18174880A JPS57106077A (en) 1980-12-22 1980-12-22 Manufacture of semiconductor integrated circuit device

Publications (1)

Publication Number Publication Date
JPS57106077A true JPS57106077A (en) 1982-07-01

Family

ID=16106186

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18174880A Pending JPS57106077A (en) 1980-12-22 1980-12-22 Manufacture of semiconductor integrated circuit device

Country Status (1)

Country Link
JP (1) JPS57106077A (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5572080A (en) * 1978-11-27 1980-05-30 Fujitsu Ltd Production of silicone gate type semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5572080A (en) * 1978-11-27 1980-05-30 Fujitsu Ltd Production of silicone gate type semiconductor device

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