JPS6465851A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS6465851A JPS6465851A JP22332487A JP22332487A JPS6465851A JP S6465851 A JPS6465851 A JP S6465851A JP 22332487 A JP22332487 A JP 22332487A JP 22332487 A JP22332487 A JP 22332487A JP S6465851 A JPS6465851 A JP S6465851A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- film
- wiring layer
- deposited
- resist
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE:To prevent the short-circuit between an upper wiring layer and a lower wiring layer by a method wherein a tapered base conducting film is formed at the upper edge part of a substrate, an insulating film is provided on the tapered base conducting film and an upper conducting film is provided in such a way as to superpose on the taper part of the insulating film. CONSTITUTION:A gate oxide film 2 is formed on the surface of an Si substrate 1 and thereafter, a poly Si layer 3 is deposited and after an insulating layer 4 is formed, a poly Si layer 5 is deposited. After that, a resist 10 is coated and is exposed and developed. Then, the layer 5 is etched by isotropic etching to its halfway. Then, an anisotropic etching is performed using the resist 10 as a mask to form a floating gate 3 and a control gate 5. Then, the film 2 and the resist 10 are removed and after an ion-implantation is performed in a diffused layer 8, a cell transistor is covered with an oxide film 6. Lastly, after an interlayer insulating film 7 is deposited, a contact is opened and a wiring layer 9 is deposited. In such a way, the short-circuit between an upper wiring layer and a lower electrode or a lower wiring layer can be prevented.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP22332487A JPS6465851A (en) | 1987-09-07 | 1987-09-07 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP22332487A JPS6465851A (en) | 1987-09-07 | 1987-09-07 | Manufacture of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6465851A true JPS6465851A (en) | 1989-03-13 |
Family
ID=16796369
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP22332487A Pending JPS6465851A (en) | 1987-09-07 | 1987-09-07 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6465851A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000294645A (en) * | 1999-03-29 | 2000-10-20 | Samsung Electronics Co Ltd | Semiconductor device and manufacture of the same |
-
1987
- 1987-09-07 JP JP22332487A patent/JPS6465851A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000294645A (en) * | 1999-03-29 | 2000-10-20 | Samsung Electronics Co Ltd | Semiconductor device and manufacture of the same |
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