JPS5715468A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS5715468A JPS5715468A JP8948780A JP8948780A JPS5715468A JP S5715468 A JPS5715468 A JP S5715468A JP 8948780 A JP8948780 A JP 8948780A JP 8948780 A JP8948780 A JP 8948780A JP S5715468 A JPS5715468 A JP S5715468A
- Authority
- JP
- Japan
- Prior art keywords
- film
- gate
- pattern
- polysilicon
- etched
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 3
- 229920005591 polysilicon Polymers 0.000 abstract 3
- 238000005229 chemical vapour deposition Methods 0.000 abstract 2
- 238000001312 dry etching Methods 0.000 abstract 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 238000002347 injection Methods 0.000 abstract 1
- 239000007924 injection Substances 0.000 abstract 1
- 230000000717 retained effect Effects 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
PURPOSE:To reduce the size of an FET by so removing an insulating film by a parallel planar type dry etching device as to retain the insulating film coated by a reduced pressure CVD method on the side of a gate polysilicon pattern and thus self- aligning the formation of contacts. CONSTITUTION:With an oxidized film 15 as a mask a polysilicon gate pattern 14 is sidewisely etched via a gate film 13 on a substrate 11, and a diffused layer 17 is then formed by an ion injection. Then, an Si nitrided film 18 is then accumulated by a reduced pressure CVD method, and film 18 is then etched by a parallel planar type dry etching device having a directivity, and the film 18 is retained on the side face of the polysilicon. Thereafter, an oxidized film 13 is so wet etched as to expose the layer 17, an aluminum electrode 19 is formed, and source and drain regions are connected. Thus, the contacting area with the diffused layer can be formed in the vicinity of the gate polycilicon pattern 14 without using a mask pattern, the size of the element is reduced, and the element can be integrated.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8948780A JPS5715468A (en) | 1980-07-01 | 1980-07-01 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8948780A JPS5715468A (en) | 1980-07-01 | 1980-07-01 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5715468A true JPS5715468A (en) | 1982-01-26 |
Family
ID=13972093
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8948780A Pending JPS5715468A (en) | 1980-07-01 | 1980-07-01 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5715468A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59117052A (en) * | 1982-12-24 | 1984-07-06 | Toshiba Corp | Method for manufacturing dome-shaped mesh electrode |
| JPH0316226A (en) * | 1989-06-14 | 1991-01-24 | Matsushita Electron Corp | Manufacture of mos field-effect transistor |
-
1980
- 1980-07-01 JP JP8948780A patent/JPS5715468A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59117052A (en) * | 1982-12-24 | 1984-07-06 | Toshiba Corp | Method for manufacturing dome-shaped mesh electrode |
| JPH0316226A (en) * | 1989-06-14 | 1991-01-24 | Matsushita Electron Corp | Manufacture of mos field-effect transistor |
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