KR920010839A - Self-aligned contact formation method - Google Patents

Self-aligned contact formation method Download PDF

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Publication number
KR920010839A
KR920010839A KR1019900019047A KR900019047A KR920010839A KR 920010839 A KR920010839 A KR 920010839A KR 1019900019047 A KR1019900019047 A KR 1019900019047A KR 900019047 A KR900019047 A KR 900019047A KR 920010839 A KR920010839 A KR 920010839A
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KR
South Korea
Prior art keywords
forming
layer
oxide
nitride film
contact
Prior art date
Application number
KR1019900019047A
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Korean (ko)
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KR930011502B1 (en
Inventor
김일욱
강미영
박희국
Original Assignee
정몽헌
현대전자산업 주식회사
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Priority to KR1019900019047A priority Critical patent/KR930011502B1/en
Publication of KR920010839A publication Critical patent/KR920010839A/en
Application granted granted Critical
Publication of KR930011502B1 publication Critical patent/KR930011502B1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268

Abstract

내용 없음No content

Description

자기정렬콘택 형성방법Self-aligned contact formation method

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제1도 내지 제7도는 본 발명의 공정방법에 의하여 자기정렬콘택을 형성하는 단계를 나타내는 단면도.1 to 7 are cross-sectional views showing a step of forming a self-aligned contact by the process method of the present invention.

Claims (2)

실리콘 기판 상부에 게이트 산화막 게이트 전극용 폴리실리콘층, 제1산화막층을 순차적으로 형성한다음, 패턴공정으로 상기 제1산화막층, 게이트 전극용 폴리실리콘층, 게이트 산화막의 소정부분을 제거하여 게이트 전극을 형성하는 단계와, 상기 게이트 전극 측벽에 산화막 스페이서를 형성하고 실리콘 기판에 소오스/드레인을 형성하는 단계와, 전체구조 상부에 절연층을 형성하고, 상기 소오스/드레인이 노출되는 콘택홀을 형성하여 소정의 도전층을 콘택하는 단계로 이루어지는 콘택형성 방법에 있어서, 전체구조 상부에 절연층을 형성하고, 상기 소오스/드레인이 노출되는 콘택홀을 형성하여 소정의 도전층을 콘택하는 단계는 상기 절연층을 제1질화막, 제2산화막 및 제2질화막으로 적층한 다음, 상기 제2질화막 상부에 감광막 패턴을 형성하고, 노출된 제2질화막과 그 하부에 제2산화막의 일정두께를 건식식각으로 제거하는 공정과, 상기 감광막 패턴을 제거하고 상기 공정으로 일정두께가 제거된 제2산화막을 습식식각으로 제거한 다음, 노출된 제2질화막 및 제1질화막을 습식식각으로 제거하여 콘택홀을 형성하고, 소정의 도전층을 형성하여 콘택홀을 통하여 하부의 콘택영역에 콘택시키는 것을 특징으로 하는 자기정렬콘택 형성방법.A gate oxide film polysilicon layer and a first oxide layer are sequentially formed on the silicon substrate, and then a predetermined portion of the first oxide layer, the polysilicon layer for the gate electrode, and the gate oxide film is removed by a patterning process. Forming an oxide layer on the sidewalls of the gate electrode, forming a source / drain on the silicon substrate, forming an insulating layer on the entire structure, and forming a contact hole through which the source / drain is exposed In the contact forming method comprising contacting a predetermined conductive layer, forming an insulating layer on the entire structure, and forming a contact hole to expose the source / drain to contact a predetermined conductive layer is the insulating layer Is laminated on the first nitride film, the second oxide film, and the second nitride film, and then a photoresist pattern is formed on the second nitride film. Dry etching the predetermined thickness of the second nitride film and the lower portion of the second oxide film, and removing the photoresist pattern, and removing the second oxide film having a predetermined thickness removed by the process by wet etching. Forming a contact hole by wet etching the second nitride film and the first nitride film, and forming a predetermined conductive layer to contact the lower contact region through the contact hole. 제1항에 있어서, 상기 노출된 제2질화막 및 제1질화막을 습식식각하는 용액은 제1 및 제2산화막에 대하여 식각선택비가 현저한 인산용액인 것을 특징으로 하는 자기정렬콘택 형성방법.The method of claim 1, wherein the solution for wet etching the exposed second nitride layer and the first nitride layer is a phosphoric acid solution having a significant etching selectivity with respect to the first and second oxide layers. ※ 참고사항 : 최초출원 내용에 의하여 공개되는 것임.※ Note: This is to be disclosed by the original application.
KR1019900019047A 1990-11-23 1990-11-23 Self alignment contact forming method KR930011502B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019900019047A KR930011502B1 (en) 1990-11-23 1990-11-23 Self alignment contact forming method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019900019047A KR930011502B1 (en) 1990-11-23 1990-11-23 Self alignment contact forming method

Publications (2)

Publication Number Publication Date
KR920010839A true KR920010839A (en) 1992-06-27
KR930011502B1 KR930011502B1 (en) 1993-12-08

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019900019047A KR930011502B1 (en) 1990-11-23 1990-11-23 Self alignment contact forming method

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KR930011502B1 (en) 1993-12-08

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