KR960030327A - Contact hole formation method of semiconductor device - Google Patents

Contact hole formation method of semiconductor device Download PDF

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Publication number
KR960030327A
KR960030327A KR1019950000078A KR19950000078A KR960030327A KR 960030327 A KR960030327 A KR 960030327A KR 1019950000078 A KR1019950000078 A KR 1019950000078A KR 19950000078 A KR19950000078 A KR 19950000078A KR 960030327 A KR960030327 A KR 960030327A
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KR
South Korea
Prior art keywords
layer
etching
contact hole
semiconductor device
forming
Prior art date
Application number
KR1019950000078A
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Korean (ko)
Inventor
양태흠
Original Assignee
김주용
현대전자산업 주식회사
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Application filed by 김주용, 현대전자산업 주식회사 filed Critical 김주용
Priority to KR1019950000078A priority Critical patent/KR960030327A/en
Publication of KR960030327A publication Critical patent/KR960030327A/en

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Abstract

본 발명은 반도체 소자의 콘택홀 형성방법에 관한 것으로, 높은 단차비로 인해 발생되는 금속의 층덮힘 특성 저하를 개선하기 위하여 절연층을 소정깊이 식각하고 그양측벽에 스페이서를 형성한 후 습식 및 건식식각을 실시하므로써 단차비를 감소시켜 금속의 층덮힘 특성을 향상시키고 따라서 소자의 전기적특성 및 수율이 향상될 수 있도록 한 반도체 소자의 콘택홀 형성방법에 관한 것이다.The present invention relates to a method for forming a contact hole in a semiconductor device, in order to improve the degradation of the layer covering characteristic of the metal caused by the high step ratio, the insulating layer is etched to a predetermined depth and the spacer formed on both sides of the wet and dry etching The present invention relates to a method for forming a contact hole in a semiconductor device in which the step ratio is reduced to improve the layer covering property of the metal and thus the electrical characteristics and the yield of the device can be improved.

Description

반도체 소자의 콘택홀 형성방법Contact hole formation method of semiconductor device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제2A 내지 제2D도는 본 발명에 따른 반도체 소자의 콘택홀 형성 방법을 설명하기 위한 소자의 단면도.2A to 2D are cross-sectional views of a device for explaining a method for forming a contact hole in a semiconductor device according to the present invention.

Claims (5)

반도체 소자의 콘택홀 형성방법에 있어서, 실리콘기판의 절연막 상부에 제1층 및 감광막을 순차적으로 형성한 다음 콘택홀 마스크를 이용하여 상기 감광막을 패터닝하고 이패터닝된 감광막을 식각마스크로 이용하여 상기 제1층 및 절연막의 일부를 순차적으로 식각하는 단계와, 상기 단계로부터 전체면에 제2층을 형성시킨후 식각하여 상기 식각된 제1층 및 절연층의 양측벽에 스페이서를 형성시키는 단계와, 상기 단계로부터 노출된 제1층 및 스페이서를 식각마스크로 이용한 습식식각으로 절연층을 소정깊이 식각하는 단계와, 상기 단계로부터 건식식각으로 나머지 두께의 절연층을 식각하여 콘택홀을 형성한 후 잔류된 스페이서 및 제1층을 제거시키는 단계로 이루어지는 것을 특징으로 하는 반도체 소자의 콘택홀 형성방법.In the method for forming a contact hole of a semiconductor device, a first layer and a photoresist layer are sequentially formed on an insulating layer of a silicon substrate, and then the photoresist layer is patterned using a contact hole mask and the patterned photoresist layer is used as an etch mask. Sequentially etching a portion of the first layer and the insulating layer, and forming a second layer on the entire surface from the step and etching to form spacers on both sidewalls of the etched first layer and the insulating layer; Etching the insulating layer by a predetermined depth by wet etching using the first layer and the spacer exposed as an etching mask; and forming a contact hole by etching the insulating layer having the remaining thickness by dry etching from the step; And removing the first layer. 제1항에 있어서, 상기 제1층 및 제2층은 식각비가 서로 다른 물질인 것을 특징으로 하는 반도체 소자의 콘택홀 형성방법.The method of claim 1, wherein the first layer and the second layer are formed of materials having different etching ratios. 제2항에 있어서, 상기 제1층은 질화막이며, 상기 제2층은 폴리실리콘인 것을 특징으로 하는 반도체 소자의 콘택홀 형성방법.3. The method of claim 2, wherein the first layer is a nitride film and the second layer is polysilicon. 제2항에 있어서, 상기 제1층은 폴리실리콘이며, 상기 제2층은 질화막인 것을 특징으로 하는 반도체 소자의 콘택홀 형성방법.The method of claim 2, wherein the first layer is polysilicon and the second layer is a nitride film. 제1항에 있어서, 상기 스페이서는 상기 제1층을 식각정지층으로 이용한 블랜켓 식각공정에 의해 형성된 것을 특징으로 하는 반도체 소자의 콘택홀 형성방법.The method of claim 1, wherein the spacers are formed by a blanket etching process using the first layer as an etch stop layer. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019950000078A 1995-01-05 1995-01-05 Contact hole formation method of semiconductor device KR960030327A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950000078A KR960030327A (en) 1995-01-05 1995-01-05 Contact hole formation method of semiconductor device

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Application Number Priority Date Filing Date Title
KR1019950000078A KR960030327A (en) 1995-01-05 1995-01-05 Contact hole formation method of semiconductor device

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KR960030327A true KR960030327A (en) 1996-08-17

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100436063B1 (en) * 1997-12-01 2004-07-16 주식회사 하이닉스반도체 Method of forming contact hole of semiconductor device using spacer made of undoped polysilicon layer
KR100458476B1 (en) * 1997-12-27 2005-02-23 주식회사 하이닉스반도체 Method for forming metal interconnection of semiconductor device to improve filling characteristic of metal thin film and avoid generation of void

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100436063B1 (en) * 1997-12-01 2004-07-16 주식회사 하이닉스반도체 Method of forming contact hole of semiconductor device using spacer made of undoped polysilicon layer
KR100458476B1 (en) * 1997-12-27 2005-02-23 주식회사 하이닉스반도체 Method for forming metal interconnection of semiconductor device to improve filling characteristic of metal thin film and avoid generation of void

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