JPS5766670A - Manufacture of semiconductor integrated circuit device - Google Patents

Manufacture of semiconductor integrated circuit device

Info

Publication number
JPS5766670A
JPS5766670A JP13201180A JP13201180A JPS5766670A JP S5766670 A JPS5766670 A JP S5766670A JP 13201180 A JP13201180 A JP 13201180A JP 13201180 A JP13201180 A JP 13201180A JP S5766670 A JPS5766670 A JP S5766670A
Authority
JP
Japan
Prior art keywords
film
forming
integrated circuit
circuit device
semiconductor integrated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13201180A
Other languages
Japanese (ja)
Inventor
Katsuzo Tsuchida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP13201180A priority Critical patent/JPS5766670A/en
Publication of JPS5766670A publication Critical patent/JPS5766670A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate

Abstract

PURPOSE:To form compactly a semiconductor integrated circuit device by forming a contacting hole for mutual wiring at the polysilicon film of a gate electrode in a self-aligning manner, thereby eliminating the necessity of providing an aligning margin between the contact and the gate. CONSTITUTION:A field oxidized film 1 is formed on the surface of a P type semiconductor silicon substrate 0, and then a thin gate oxidized film 2, a gate electrode, a polysilicon film 3 for forming mutual wire and a nitrided silicon film 4 are sequentially grown. Then, the part for forming the contacting hole is retained, and the polysilicon film 6 of the other part is selectively etched. Then, a nitrided silicon film 7 is removed, reversely conductive impurity ions to the substrate 0 are injected to form an N type diffused layer. Subsequently, a thick interlayer insulating film 10 is formed, a nitrided silicon film 8 on the film 6 is removed, and the film 2 is also removed. Thus, the contacting hole can be formed.
JP13201180A 1980-09-22 1980-09-22 Manufacture of semiconductor integrated circuit device Pending JPS5766670A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13201180A JPS5766670A (en) 1980-09-22 1980-09-22 Manufacture of semiconductor integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13201180A JPS5766670A (en) 1980-09-22 1980-09-22 Manufacture of semiconductor integrated circuit device

Publications (1)

Publication Number Publication Date
JPS5766670A true JPS5766670A (en) 1982-04-22

Family

ID=15071446

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13201180A Pending JPS5766670A (en) 1980-09-22 1980-09-22 Manufacture of semiconductor integrated circuit device

Country Status (1)

Country Link
JP (1) JPS5766670A (en)

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