JPS6489366A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS6489366A JPS6489366A JP24541187A JP24541187A JPS6489366A JP S6489366 A JPS6489366 A JP S6489366A JP 24541187 A JP24541187 A JP 24541187A JP 24541187 A JP24541187 A JP 24541187A JP S6489366 A JPS6489366 A JP S6489366A
- Authority
- JP
- Japan
- Prior art keywords
- grooves
- substrate
- conductivity type
- films
- semiconductor substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 239000000758 substrate Substances 0.000 abstract 4
- 230000009977 dual effect Effects 0.000 abstract 3
- 239000012535 impurity Substances 0.000 abstract 2
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7831—Field effect transistors with field effect produced by an insulated gate with multiple gate structure
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
Abstract
PURPOSE:To simplify a forming process by providing dual gate conductive films on the side faces of first and second grooves formed on a semiconductor substrate, and introducing an opposite conductivity type source, drain layers so that of the substrate from third and fourth grooves formed in a direction crossing both the first and second grooves. CONSTITUTION:Grooves 12-15 are formed on a semiconductor substrate 11, and element isolating films 16, 17 are formed in the bottoms of the grooves 14, 15. Gate oxide films 18, 19 are formed on the sidewalls of the grooves 14, 15, and a gate electrode 20 is so patterned as to cross over between the grooves 14 and 15 and an insulating film 24. The sections 201, 202 of the electrode 20 become dual gates. Opposite conductivity type impurity regions 21, 22 to the substrate 11 are formed by implanting an impurity on the inner faces of the grooves 12, 13. The aligning directions of the grooves 12, 13 are perpendicular to between the grooves 14 and 15, and the regions 21, 22 become source, drain. Thus, a dual gate MOS transistor can be obtained by a simple process in a structure adapted for an integrated circuit.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP24541187A JPS6489366A (en) | 1987-09-29 | 1987-09-29 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP24541187A JPS6489366A (en) | 1987-09-29 | 1987-09-29 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6489366A true JPS6489366A (en) | 1989-04-03 |
Family
ID=17133254
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP24541187A Pending JPS6489366A (en) | 1987-09-29 | 1987-09-29 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6489366A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0735589A2 (en) * | 1995-03-30 | 1996-10-02 | Kabushiki Kaisha Toshiba | Semiconductor device with a trench gate and method of manufacturing the same |
JP2003086795A (en) * | 2001-09-11 | 2003-03-20 | Sharp Corp | Semiconductor device, manufacturing method therefor, integrated circuit and semiconductor system |
JP2003101013A (en) * | 2001-09-26 | 2003-04-04 | Sharp Corp | Semiconductor device, manufacturing method therefor, integrated circuit and semiconductor system |
-
1987
- 1987-09-29 JP JP24541187A patent/JPS6489366A/en active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0735589A2 (en) * | 1995-03-30 | 1996-10-02 | Kabushiki Kaisha Toshiba | Semiconductor device with a trench gate and method of manufacturing the same |
EP0735589A3 (en) * | 1995-03-30 | 1997-10-08 | Toshiba Kk | Semiconductor device with a trench gate and method of manufacturing the same |
JP2003086795A (en) * | 2001-09-11 | 2003-03-20 | Sharp Corp | Semiconductor device, manufacturing method therefor, integrated circuit and semiconductor system |
JP2003101013A (en) * | 2001-09-26 | 2003-04-04 | Sharp Corp | Semiconductor device, manufacturing method therefor, integrated circuit and semiconductor system |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR930005257A (en) | Thin film field effect element and its manufacturing method | |
US4178605A (en) | Complementary MOS inverter structure | |
US3639813A (en) | Complementary enhancement and depletion mosfets with common gate and channel region, the depletion mosfet also being a jfet | |
KR920010975A (en) | Semiconductor device and manufacturing method thereof | |
KR940004846A (en) | Semiconductor device and manufacturing method | |
KR960006691B1 (en) | Semiconductor device | |
JPH0527267B2 (en) | ||
KR950034822A (en) | High voltage transistors and manufacturing method thereof | |
KR920007448B1 (en) | Semiconductor device and there manufacturing method | |
EP0263287A3 (en) | Forming a capacitor in an integrated circuit | |
JPS6489366A (en) | Semiconductor device | |
JPS5650535A (en) | Manufacture of semiconductor device | |
EP0017934B1 (en) | Method of manufacturing insulated-gate field-effect transistors | |
JPS6484659A (en) | Manufacture of semiconductor device | |
JPS6129148B2 (en) | ||
KR950010066A (en) | Semiconductor device having thin film wiring and manufacturing method thereof | |
JPH0247849A (en) | Semiconductor device | |
JPH04318964A (en) | Semiconductor device and manufacture thereof | |
JPS60134474A (en) | Mos type amorphous semiconductor device | |
KR940022796A (en) | Transistor Isolation | |
JPS6457671A (en) | Semiconductor device and manufacture thereof | |
KR100220300B1 (en) | Manufacture of semiconductor device | |
JPS6417472A (en) | Manufacture of semiconductor integrated circuit device having ldd structure | |
KR19980044198A (en) | SRAM cell and its manufacturing method | |
JPS57188845A (en) | Master sliced semiconductor integrated circuit device |