JPS5759382A - Manufacture of semicondutor device - Google Patents

Manufacture of semicondutor device

Info

Publication number
JPS5759382A
JPS5759382A JP13441980A JP13441980A JPS5759382A JP S5759382 A JPS5759382 A JP S5759382A JP 13441980 A JP13441980 A JP 13441980A JP 13441980 A JP13441980 A JP 13441980A JP S5759382 A JPS5759382 A JP S5759382A
Authority
JP
Japan
Prior art keywords
layer
oxide film
gate oxide
poly
deposited
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13441980A
Other languages
Japanese (ja)
Inventor
Shigeru Shimada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP13441980A priority Critical patent/JPS5759382A/en
Publication of JPS5759382A publication Critical patent/JPS5759382A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE:To enhance reliability by providing a polycrystalline semiconductor layer on a gate oxide film wherein a contact hole is provided, introducing impurities into a substrate via said layer, heat-treating and stabilizing the polycrystalline layer, and obtaining a lower layer of Al electrode. CONSTITUTION:A field oxide film 11 and a gate oxide film 12 are provided on the p type Si substrate 10. The contact hole is formed in the gate oxide film. Then poly Si 13 is deposited and P is added. Holes for a source and a drain are provided, impurities are introduced, and source and drain regions 14 are provided. Then a PSG film 15 is provided on the entire surface, heat treatment is performed in N2 atmosphere, and the poly Si layer 13 is stabilized. Then an Al layer is deposited, and an electric contact is made. In this method, with the depth of the junction of the diffused layer in the contact part being shallow, a breakdown strength can be increased and the reliability is enhanced.
JP13441980A 1980-09-29 1980-09-29 Manufacture of semicondutor device Pending JPS5759382A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13441980A JPS5759382A (en) 1980-09-29 1980-09-29 Manufacture of semicondutor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13441980A JPS5759382A (en) 1980-09-29 1980-09-29 Manufacture of semicondutor device

Publications (1)

Publication Number Publication Date
JPS5759382A true JPS5759382A (en) 1982-04-09

Family

ID=15127940

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13441980A Pending JPS5759382A (en) 1980-09-29 1980-09-29 Manufacture of semicondutor device

Country Status (1)

Country Link
JP (1) JPS5759382A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59198760A (en) * 1983-04-25 1984-11-10 Seiko Epson Corp Mos type semiconductor integrated circuit device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59198760A (en) * 1983-04-25 1984-11-10 Seiko Epson Corp Mos type semiconductor integrated circuit device

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