JPS5444483A - Mos type semiconductor device and its manufacture - Google Patents
Mos type semiconductor device and its manufactureInfo
- Publication number
- JPS5444483A JPS5444483A JP11072577A JP11072577A JPS5444483A JP S5444483 A JPS5444483 A JP S5444483A JP 11072577 A JP11072577 A JP 11072577A JP 11072577 A JP11072577 A JP 11072577A JP S5444483 A JPS5444483 A JP S5444483A
- Authority
- JP
- Japan
- Prior art keywords
- gate
- film
- layers
- oxide film
- constitution
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
- Drying Of Semiconductors (AREA)
Abstract
PURPOSE: To remarkably make short the channel length, by forming doped oxide with self-alignment along the gate side surface.
CONSTITUTION: The field oxide film, gate oxide film, and ploly-crystal Si gate 4 are provided on the p type Si 1, and the n layer 23 is made by injecting B ions selectively. Succeedingly, the CVD oxide film 24 filled with phosphours is uniformly deposited, etching gas is veritically flown and it is stopped when the film 24 on the gate upper side 4a is removed, the film 24' is left on the side surface 4b. Next, when the n+ layers 25 and 26 are made with phosphorus diffusion, the n diffusion layers 27 and 28 are caused from the film 24', and the p layer 23' is caused beneath the gate 4. The junction depth of the layers 25 and 26 is selected so that it does not reach the region beneath the gate. After that, the insulation film 9 is deposited and electrodes 33 to 35 are made by opening window. With this constitution, the junction depth can accruately be controlled with low concentration of the layers 27 and 28, the performance is uniform even with shorter effective channel Le, and the dielectric strength can not be lowered for the gate film.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11072577A JPS5444483A (en) | 1977-09-14 | 1977-09-14 | Mos type semiconductor device and its manufacture |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11072577A JPS5444483A (en) | 1977-09-14 | 1977-09-14 | Mos type semiconductor device and its manufacture |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5444483A true JPS5444483A (en) | 1979-04-07 |
| JPS6110996B2 JPS6110996B2 (en) | 1986-04-01 |
Family
ID=14542899
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11072577A Granted JPS5444483A (en) | 1977-09-14 | 1977-09-14 | Mos type semiconductor device and its manufacture |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5444483A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5562733A (en) * | 1978-11-03 | 1980-05-12 | Ibm | Method of forming narrow region on silicon substrate |
| JPS5694777A (en) * | 1979-12-20 | 1981-07-31 | Ibm | Method of manufacturing semiconductor |
| JPS57184249A (en) * | 1978-11-03 | 1982-11-12 | Ibm | Method of forming double dispersion type fet device |
| JPS59167067A (en) * | 1982-12-28 | 1984-09-20 | マステク，コ−パレイシヤン | Method of producing field effect transistor |
| JPS61159768A (en) * | 1978-11-03 | 1986-07-19 | インタ−ナシヨナル ビジネス マシ−ンズ コ−ポレ−シヨン | Manufacture of field effect transistor |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63223397A (en) * | 1987-03-12 | 1988-09-16 | Tsurumi Mfg Co Ltd | Impeller for motor centrifugal pump |
-
1977
- 1977-09-14 JP JP11072577A patent/JPS5444483A/en active Granted
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5562733A (en) * | 1978-11-03 | 1980-05-12 | Ibm | Method of forming narrow region on silicon substrate |
| JPS57184249A (en) * | 1978-11-03 | 1982-11-12 | Ibm | Method of forming double dispersion type fet device |
| JPS5928983B2 (en) * | 1978-11-03 | 1984-07-17 | インタ−ナショナル ビジネス マシ−ンズ コ−ポレ−ション | Method of forming buried insulation isolation region |
| JPS61159768A (en) * | 1978-11-03 | 1986-07-19 | インタ−ナシヨナル ビジネス マシ−ンズ コ−ポレ−シヨン | Manufacture of field effect transistor |
| JPH0347577B2 (en) * | 1978-11-03 | 1991-07-19 | Intaanashonaru Bijinesu Mashiinzu Corp | |
| JPH0358173B2 (en) * | 1978-11-03 | 1991-09-04 | Intaanashonaru Bijinesu Mashiinzu Corp | |
| JPS5694777A (en) * | 1979-12-20 | 1981-07-31 | Ibm | Method of manufacturing semiconductor |
| JPH0123954B2 (en) * | 1979-12-20 | 1989-05-09 | Intaanashonaru Bijinesu Mashiinzu Corp | |
| JPS59167067A (en) * | 1982-12-28 | 1984-09-20 | マステク，コ−パレイシヤン | Method of producing field effect transistor |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6110996B2 (en) | 1986-04-01 |
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